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《Journal of Zhejiang University(Engineering Science)》 2004-10
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Evolution of microstructure and electrical properties of FeS_2 thin films in sulfuration processes

ZHANG Xiu-juan,MENG Liang, LIU Yan-hui(Institute of Metal Materials, Zhejiang University, Hangzhou 310027, China)  
Polycrystalline FeS_2 thin films were prepared by thermally sulfurating iron layers at 673K and 773K for different length of time. Their crystal structure, chemical composition, grain size, electrical resistivity and carrier concentration were investigated. Thermal sulfuration at 673K for more than 20h or at 773K for more than 1h could completely transform Fe layers into FeS_2 thin films. With prolonging sulfuration time at 673K, the films showed a nearly constant grain diameter of about 50nm but evident increase in electrical resistivity and general decrease in carrier concentration. The films sulfurated at 773K increased faster in grain diameter and electrical resistivity but not in carrier concentration level is generally lower than 1×10~(25)m~(-3).
【Fund】: 国家自然科学基金资助项目(50071056).
【CateGory Index】: TM914
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