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《Journal of Zhejiang University(Engineering Science)》 2004-10
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Sub-micron silicon epilayer deposited by a novel Ultrahigh Vacuum Chemical Deposition System and fabrication of high frequency device

WU Gui-bin, YE Zhi-zhen, CUI Ji-feng, HUANG Jing-yun, ZHANG Hai-yan, ZHAO Bin-hui, LU Huan-ming, Hangzhou 310027, China)  
To obtain ultrathin epilayers which are used to improve high frequency characteristic of silicon based devices, for high frequency devicesa new approach to grow sub-micron silicon epilayer was developed by a novel ultrahigh vacuum chemical vapor deposition system consisting of three chambers and a computer-controlled gas distribution. .Its construction was reported in details, in whichThe base pressure of the reaction chamber could reach 5.0×10~(-8)Pa . With this system, the sub-micron silicon epilayer was successfully deposited at 600℃. The thickness and carrier concentration of the epilayer was about 0.1~0.5μm and 1×10~(17)cm~3, respectively. Using the above sub-micron silicon epilayer, a prototype Schottdy Barrier diode was fabricated, whose calculated cutoff frequency could reach (31GHz).
【Fund】: 国家科学技术部攀登项目;; 浙江省计划资助项目(981101040;991110535).
【CateGory Index】: TN304
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