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《Journal of Zhejiang University(Engineering Science)》 2006-01
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Overexposure control for stabilizing linewidth

LIANG Yi-yong~1,GU Zhi-qi~2,ZHANG Zhe-ming~3,YAN Wei~1,YANG Guo-guang~1(1.College of Information Science and Engineering,Zhejiang University,Hangzhou 310027,China;2.College of Science,Zhejiang University,Hangzhou 310027,China;3.School of Mathematical Science,Fudan University,Shanghai 200433,China)  
In order to obtain stabilizing linewidth,a novel overexposure technique was proposed for producing micro figures on thin photoresist by laser pattern generator.The energy distribution of the focused laser spot has Gaussian profile, and if the exposure dose threshold of the photoresist is less than and far away from the peak of that Gaussian curve,the linewidth will be less affected by the variation of exposure dose or exposure dose threshold,and so,will improve the linewidth stability.By increasing exposure dose,a group of short arcs was generated on the substrate coated with 0.6 μm photoresist.The test results showed that the experimental relation curve of linewidth and exposure dose accard well with the theoretical one.The overexposure technique is valuable for fabrication of devices with stabilized linewidth such as integrated optical gyroscope with spiral waveguide.
【Fund】: 浙江省教育厅科研资助项目(G20050436)
【CateGory Index】: TN405
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1 Li Ke1 Shi Peng1 Zhang Xiaobo2 Wang Shengbo1 Huang Kun1 Li Yongping1,3 1Department of Physics,University of Science & Tecnology of China,Hefei,Anhui 230026,China 2National Synchrotron Radiation Laboratory,University of Science & Technology of China,Hefei,Anhui 230026,China 3Anhui Key Laboratory of Optoelectronic Science and Technology,Hefei,Anhui 230026,China;Design and Preparation of Diffraction Optical Element in Dual Lens System[J];Chinese Journal of Lasers;2010-08
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