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《Journal of Zhejiang University(Engineering Science)》 2007-09
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Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer

LIANG Jun-hua,GUO Bing,LIU Xu(State Key Laboratory of Modern Optical Instrumentation,Zhejiang University,Hangzhou 310027,China)  
Polycrystalline aluminum nitride(AlN) thin film with c-axis preferred orientation was deposited on indium tin oxide(ITO) glass substrate by reactive radio frequency(RF) magnetron sputtering,which introduced a low temperature AlN interlayer as buffer layer.The deposited films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM) and field emission scanning electron microcopy(FESEM) to investigate the influence of the buffer layer on the crystalline quality and surface morphology.The results indicated that the introduction of the buffer layer tended to improve the crystallization of AlN films and meanwhile decrease the surface roughness from 19.1 nm to 2.5 nm,leading to a dense and smooth surface texture.The cross-sectional scanning electron microcopy(SEM) photographs of AlN films showed a high degree of alignment for the columnar structure.Furthermore,transmission spectra were studied to obtain the refractive index(2.018 7) and the extinction coefficient(0.007 7) of the deposited films.
【Fund】: 国家自然科学基金资助项目(60478043);; 浙江省自然科学基金资助项目(Y105536)
【CateGory Index】: O484
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