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《Chinese Journal of Rare Metals》 2008-01
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Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Fu Kai,Zhang Yu,Chen Dunjun,Han Ping,Xie Zili,Zhang Rong (Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China)  
With the known growth mechanism of GaN grown by metalorganic chemical vapor deposition(MOCVD),a computational study of GaN MOCVD was performed by the method of Computational Fluid Dynamics(CFD) and Kinetic Monte Carlo(KMC).The construction of 2D reactor used in the simulation was referred to the MOCVD system in the laboratory.The calculated results suggest that the gas precursors could be completely decomposed between 950 and 1350 K and the GaN should grow in this temperature range.The growth rate would decrease below 950 K owing to the partially decomposition of precursors.And the growth rate above 1350 K would do the same owing to desorption of Ga species. On the other hand,high V/III ratio could bring low growth rate.The morphological evolution during growth showed that GaN film grew in a layer-by-layer mode at 1073~1473 K and the film structure grown at 1373 K was the smoothest one.
【Fund】: 国家重点基础研究发展规划973(2006CB604900);; 国家自然科学基金(6039072 60476030 60421003 60676057);; 教育部重大项目(10416);; 高等学校博士学科点专项科研基金(20050284004);; 江苏省自然科学基金项目(BK2005210 BK2006126)
【CateGory Index】: TN304
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【Co-citations】
Chinese Journal Full-text Database 7 Hits
1 AN Xizhong, ZHANG Yu, LIU Guoquan, QIN Xiangge, WANG Fuzhong, LIU Shengxin Materials Science and Engineering School, UST Beijing, Beijing 100083, China. Applied Science School, UST Beijing, Beijing 100083, China.;Atomic Scale Simulation of {100} Oriented CVD Diamond Film Grown[J];Journal of University of Science and Technology Beijing;2002-02
2 Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang, Shengxin Liu, and Jingyuan LiMaterials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, ChinaApplied Science School, University of Science and Techn;Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part I Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model[J];北京科技大学学报(英文版);2002-05
3 Xizhong An, Yu Zhang, Guoquan Liu, Xiangge Qin, Fuzhong Wang and Shengxin Liu Materials Science and Engineering School, University of Science & Technology Beijing, Beijing 100083, China Applied Science School, University of Science & Technology Beijing, Beijing 100083, China;Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems[J];北京科技大学学报(英文版);2002-06
4 LI Yan rong 1, YANG Chun 2 (1.Dept.of Chemistry,Chongqing Normal University , Chongqing 400047; 2. The College of Microelectronics and Solidelectronics,UESTC. Chengdu 610054,China);The Thin Films′ Growth and Computer Simulation at Atomic Level[J];Journal of Chongqing Teachers College(Natural Science Edition);2002-03
5 YANG Chun1,2,LI Yanrong1(1. Institute of Microelectronics and Solid State Electronics, UESTC. Chengdu 610054,China;2.Institute of Mathematics and Software Science, Sichuan Normal University, Chengdu 610068,China);Computer simulation and the modeling of thin film growth[J];Journal of Functional Materials;2003-03
6 AN Xi-zhong1,LI Chang-xing1,LIU Guo-quan2,SHEN Feng-man1,LI You-qing1 (1. School of Materials and Metallurgy,Northeastern University,Shenyang 110004,China; 2. School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China);Theoretical study progress of gas phase chemistry in CVD diamond film reactor[J];Journal of Central South University(Science and Technology);2010-03
7 ZhANG Yu , LIU Guoquan, QIN Xiangge (University of Science and Technology Beijing,Beijing 100083, China);A MODIFIED METHOD FOR THE THREE-DIMENSIONAL ATOMIC-SCALE SIMULATION OF CVD DIAMOND FILM[J];Chinese Journal of Stereology and Image Analysis;2002-04
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Fu Yi,Sun Yuanping,Shen Xiaoming,Li Shunfeng,Feng Zhihong, Duan Lihong,Wang Hai and Yang Hui(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China);Growth of Cubic GaN by MOCVD at High Temperature[J];Chinese Journal of Semiconductors;2002-02
2 Jin Ruiqin,Zhao Degang,Liu Jianping,Zhang Jicai,and Yang Hui(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China);Growth Rate of GaN Grown by MOCVD[J];Chinese Journal of Semiconductors;2005-04
3 Guo Wenping,Shao Jiaping,Luo Yi,Sun Changzheng,Hao Zhibiao,and Han Yanjun(State Key Laboratory of Integrated Optoelectronics,Deptartment of Electronic Engineering, Tsinghua University,Beijing 100084,China);MOCVD Process Simulation of GaN[J];Chinese Journal of Semiconductors;2005-04
4 Zuo Ran1,Zhang Hong1,and Liu Xianglin2(1 School of Energy and Power,Jiangsu University,Zhenjiang 212013,China) (2 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Numerical Study of Transport Phenomena in a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets[J];Chinese Journal of Semiconductors;2005-05
5 Nie Yuhong~,Liu Yong,and Yao Shouguang(School of Mechanical & Power Engineering,Jiangsu University of Science and Technology,Zhenjiang 212003,China);Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets[J];Chinese Journal of Semiconductors;2007-01
6 Zuo Ran1 and Li Hui1,2(1 School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,China)(2 School of Mechanical Engineering,Jimei University,Xiamen 361021,China);Optimization Design of the Transport Process in MOCVD Reactors[J];Journal of Semiconductors;2008-06
7 WEN Shangsheng 1,2 \ LIAO Changujun 1) \ FAN Guanghan 1) \ LIU Songhao 1) \ DENG Yunlong 1) \ ZHANG Guodong 1) 1) Institute of Quantum Electronics, South China Normal University, Guangzhou 510631, China 2) Depar;RECENT PROGRESS IN MOCVD TECHNOLOGY[J];JOURNAL OF SOUTH CHINA NORMAL UNIVERSITY;1999-03
8 ZUO Ran,ZHANG Hong,XU Qian(School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,China);Numerical Modeling and Optimization of Transport Process for Radial Flow MOCVD Reactor[J];Journal of Synthetic Crystals;2005-06
9 XU Qian,ZUO Ran(School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,China);Numerical Simulation on GaN Growth in Reverse-flow Showerhead MOCVD Reactors[J];Journal of Synthetic Crystals;2007-02
10 ZHONG Shu-quan,REN Xiao-min,WANG Qi,HUANG Hui,HUANG Yong-qing,ZHANG Xia,CAI Shi-wei(Key Laboratory of Optic-communication and Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China);Numerical Simulation of Flow and Temperature Field in MOCVD Reactor[J];Journal of Synthetic Crystals;2008-06
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