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《CHINESE JOURNAL OF RARE METALS》 1998-01
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Gas Source Molecular Beam Epitaxy Growth of Ge x Si 1- x /Si Alloys

Liu Xuefeng, Li Jianping and Sun Dianzhao (Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)  
Strained Ge x Si 1- x alloys were grown successtully on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions were monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increases with GeH 4/(GeH 4+2Si 2H 6) gas flow ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and Ge x Si 1- x epilayer thickness. Results indicated that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.
【CateGory Index】: TN304
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