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Chinese Journal of Luminescence
FQ: 月刊
AD of Publication: 吉林省长春市
Lanuage: 中文;
ISSN: 1000-7032
CN: 22-1116/O4
YP: 1970
Url: 中国物理学会发光分会;中科院长春光机所
Recommended Journals
Chinese Journal of Luminescence
2001 -S1
Catalog
Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy WU Jun 1*, ZHAO F H 1, Ito Y 2, Yoshida S 2, Onabe K 1, Shiraki Y 3(1. Graduate School of Frontier Science, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo113 8656, Japan;2. Yokohama R & D Laboratories, The Furukawa Electric Co. Ltd., 2
Residual Strain Control in AlN and GaN EpilayerGrown on 6H-SiC Substrate Using (GaN/AlN)Multi Buffer Layers by Low pressure MOVPE Horie M , Ishihara Y, Takano T, Kawanishi H(Department of Electronic Engineering, Kohgakuin University, 2665 1 Nakano machi, Hachiohji shi, Tokyo192 0015, Japan)
Increasing Hole Concentration of p-type GaN by Mg Implantation YANG Zhi jian, LONG Tao, ZHANG Guo yi(Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)
Thermodynamic Consideration of Nitride Quaternary Grown by MOVPE LU Da cheng 1, DUAN Shu kun 2(1 Laboratory of Semiconductor Materials Science, Institute of Semi conductors, Chinese Academy of Sciences; 2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China)
Effect of TMGa Molar Flow Rate of GaN Buffer on Subsequent GaN Epilayers and the Buffer Growth Model CHEN Zhen, YUAN Hai rong, LU Da cheng, WANG Xiao hui, LIU Xiang lin, HAN Pei de, WANG Du, WANG Zhan guo (Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing100083, China)
Preparation and Luminescence of Blue Light Conversion Material YAG∶Ce YAO Guang qing, DUAN Jie fei, REN Min, YU Hai dong, LIN Jian hua(Department of Chemistry, Peking University, Beijing100871, China)
Effects of GaAs Substrate Nitridation with N_2-H_2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD WANG San sheng 1, GU Biao 1,2, XU Yin 1,2, QIN Fu wen 1,2, SUI Yu 1,2, YANG Da zhi 2,3 (1. Department of Electrical Engineering and Applied Electronics, Dalian Univers ity of Technology, Dalian116024, China;2. National Key Laboratory of Material
Observation of Morphology Development in Initial Growth Stage of GaN YUAN Hai rong, CHEN Zhen, LU Da cheng, LIU Xiang lin, HAN Pei de, WANG Xiao hui, WANG Du(Laboratory of Semiconductor Materials Science, Institute of Se mi conductors, Chinese Academy of Sciences, Beijing100083, China)
Investigation on Polarity of GaN/Al_2O_3Heterostructure Grown by MOVPE HAN Pei de, LIU Xiang lin, WANG Xiao hui, WANG Du, LU Da cheng, WANG Zhan guo(Laboratory of Semiconductor Materials Science, Institute of Se miconductors, Chinese Academy of Sciences, Beijing100083, China)
Photoluminescence and Absorption in InGaN Filmswith InN Segregation CHEN Zhi zhong, QIN Zhi xin, YANG Zhi jian, TONG Yu zhen, DING Xiao min, ZHANG Guo yi(Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)
InN Segregation in InGaN Layers Grown by Metalorganic Chemical Vapor Deposition QIN Zhi xin, CHEN Zhi zhong, TONG Yu zhen, LU Shu, ZHANG Guo yi (Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)
InGaN-based Light-Emitting Diodes and Laser Diodes Mukai T *, Nagahama S, Iwasa N, Senoh M, Matsushita T, Sugimoto Y, Kiyoku H, Kozaki T, Sano M, Matsumura H,Umemoto H, Chocho K(Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774 8601, Japan)
Structural Properties of Laterally Overgrown GaN ZHANG Rong 1, GU Shu lin 1, XIU Xiang qian 1, LU Dian qing 1,SHEN Bo 1, SHI Yi 1, ZHENG You dou 1, Kuan T S 2( 1 Department of Physics, Nanjing University, Nanjing210093, Chin a;2 Department of Physics, State University of New York at Al
Capacitance Voltage Properties of a Pb(Zr_(0.53)Ti_(0.47))O_3Ferroelectric Film on Al_xGa_(1-x)N/GaN Heterostructure SHEN Bo 1, LI Wei ping 1, ZHOU Yu gang 1, BI Zhao xia 1, ZHANG Rong 1,ZHENG Ze wei 1, LIU Jie 1, ZHOU Hui mei 1, SHI Yi 1, LIU Zhi guo 1, ZHENG You dou 1, Someya T 2, Arakawa Y 2(1 Department of Physics and National Laboratory of
Piezoelectric Polarization Effect in Al_xGa_(1-x)N/GaN Heterostructures through Capacitance Voltage Method ZHOU Yu gang 1, SHEN Bo 1, YU Hui qiang 1, ZHANG Rong 1, LIU Jie 1, ZHOU Hui mei 1, SHI Yi 1, ZHENG You dou 1, Someya T 2, Arakawa Y 2 (1 Department of Physics, Nanjing University, Nanjing210093, Chin a;2 Research Center for Advanced
Investigation of the Magnetotransport Propertiesof the Two dimentional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures ZHENG Ze wei 1, SHEN Bo 1*, LIU Jie 1, ZHOU Hui mei 1, QIAN Yue 1, ZHANG Rong 1, SHI Yi 1, ZHENG You dou 1, JIANG Chun ping 2, GUO Shao ling 2, ZHENG Guo zhen 2, CHU Jun hao 2, Someya T 3, Arakawa Y 3(1 Department of Physics, Nan
A Modified Dynamical Theory Model of X-ray Diffraction for GaN GUO Wen ping, HAO Zhi biao, LUO Yi *(State Key Laboratory on Integrated Optoelectronics, Department of E lectronic Engineering, Tsinghua University, Beijing100084, China)
XPS and AES Investigation of GaN Films Grown by MBE YUAN Jin she 1,2, CHEN Guang de 1*, QI Ming 3,LI Ai zhen 3, XU Zhuo 4(1 Department of Applied Physics, Xi′an Jiaotong University, Xi′a n710079, China;2 Department of Applied Physics, Xi′an University of Technology, Xi′an7100 48, China; 3
X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy ZHOU Jin, YANG Zhi jian, TANG Ying jie, ZHANG Guo yi(Department of Physics, Mesoscopic Physics National Key Laboratory, P eking University, Beijing 100871, China)
AlGaInN High Power Lasers Grown on ELO-GaN Ikeda M *, Uchide S(Development Center, Sony Shiroishi Semiconductor Inc. 3 53 2 Shiratori, Shi roishi shi, Miyagi ken 989 0734, Japan)
GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition YANG Hui, ZHAO De gang, ZHANG Shu ming, ZHU Jian jun, FENG Zhi hong, DUAN Li hong, LIU Su ying(State Key Laboratory on Integrated Optoelectronics, Institute of Sem iconductors, Chinese Academy of Sciences, Beijing100083, China)
Fabrication and Properties of WhiteLuminescence Conversion LEDs TANG Ying jie, WANG Yu fang, YANG Zhi jian, ZHANG Guo yi(Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)
MOVPE Growth of Ⅲ-N Materials with Large Area (21×2″) Vertical Rotating Disk Reactors Ramer J , Parekh R, Ronan B, Loftus C, Gurary A(MECORE Corporation, 394 Elizabeth Ave., Somerset NJ08873, USA)
TurboDisc MOCVD Theory and Applications: A Fluid Dynamics Approach Li S , Ramer J, Walker R C, Fabiano P(EMCORE Corporation, 145 Belmont Ave., Somerset NJ 08873, USA)
Close Coupled Showerhead Reactors for the Growth of Group Ⅲ Nitrides Thrush E J 1*, Kappers M 2, Considine L 1, Mullins J T 1, Saywell V 1, Bentham F C 1, Sharma N 2, Humphreys C J 2(1 Thomas Swan Scientific Equipment Limited, Buckingway Business Pa rk, Cambridge CB45UG, UK;2 Department of Materials Science an
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