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Chinese Journal of Luminescence
FQ: monthly
AD of Publication: China
Lanuage: English
ISSN: 1000-7032
CN: 22-1116/O4
YP: 1970
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Chinese Journal of Luminescence
2001 -S1
Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy WU Jun 1*
Residual Strain Control in AlN and GaN EpilayerGrown on 6H-SiC Substrate Using (GaN/AlN)Multi Buffer Layers by Low pressure MOVPE Horie M 
Increasing Hole Concentration of p-type GaN by Mg Implantation YANG Zhi jian
Thermodynamic Consideration of Nitride Quaternary Grown by MOVPE LU Da cheng 1
Effect of TMGa Molar Flow Rate of GaN Buffer on Subsequent GaN Epilayers and the Buffer Growth Model CHEN Zhen
Preparation and Luminescence of Blue Light Conversion Material YAG∶Ce YAO Guang qing
Effects of GaAs Substrate Nitridation with N_2-H_2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD WANG San sheng 1
Observation of Morphology Development in Initial Growth Stage of GaN YUAN Hai rong
Investigation on Polarity of GaN/Al_2O_3Heterostructure Grown by MOVPE HAN Pei de
Photoluminescence and Absorption in InGaN Filmswith InN Segregation CHEN Zhi zhong
InN Segregation in InGaN Layers Grown by Metalorganic Chemical Vapor Deposition QIN Zhi xin
InGaN-based Light-Emitting Diodes and Laser Diodes Mukai T *
Structural Properties of Laterally Overgrown GaN ZHANG Rong 1
Capacitance Voltage Properties of a Pb(Zr_(0.53)Ti_(0.47))O_3Ferroelectric Film on Al_xGa_(1-x)N/GaN Heterostructure SHEN Bo 1
Piezoelectric Polarization Effect in Al_xGa_(1-x)N/GaN Heterostructures through Capacitance Voltage Method ZHOU Yu gang 1
Investigation of the Magnetotransport Propertiesof the Two dimentional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures ZHENG Ze wei 1
A Modified Dynamical Theory Model of X-ray Diffraction for GaN GUO Wen ping
XPS and AES Investigation of GaN Films Grown by MBE YUAN Jin she 1
X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy ZHOU Jin
AlGaInN High Power Lasers Grown on ELO-GaN Ikeda M *
GaN-based Ultraviolet Photodetectors Fabricated by Metalorganic Chemical Vapor Deposition YANG Hui
Fabrication and Properties of WhiteLuminescence Conversion LEDs TANG Ying jie
MOVPE Growth of Ⅲ-N Materials with Large Area (21×2″) Vertical Rotating Disk Reactors Ramer J 
TurboDisc MOCVD Theory and Applications: A Fluid Dynamics Approach Li S 
Close Coupled Showerhead Reactors for the Growth of Group Ⅲ Nitrides Thrush E J 1*
2001 Issues:  [S1] [04] [03] [02] [01] [S1]
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