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Chinese Journal of Luminescence
FQ: 月刊
AD of Publication: 吉林省长春市
Lanuage: 中文;
ISSN: 1000-7032
CN: 22-1116/O4
YP: 1970
Url: 中国物理学会发光分会;中科院长春光机所
Recommended Journals
Chinese Journal of Luminescence
2007 -01
Catalog
Influence of Intercalated Li on Electronic Structures and Optical Properties of V_2O_5 LI Zhi-yang, ZHOU Chang-jie, LIN Wei, WU Qi-hui*, KANG Jun-yong(Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China)
Two-dimensional Square Photonic Crystal Microcavities CHEN Song1,2, WANG Wei-biao1, LIANG Jing-qiu3, XIA Yu-xue1,2LEI Da1,2, ZENG Le-yong1,2, CHEN Ming4(1. Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130033, China;2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China; 3. National Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;4. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China)
Frequency Chirps and Spectra of Chirped Gaussian Optical Pulses in Case of Negative Quintic Nonlinearity ZHONG Xian-qiong, XIANG An-ping, LUO Li, LI Xu(Department of Optoelectronics and Technology, Chengdu University of Information Technology, Chengdu 610225, China)
Low-threshold and Temperature Tunable Optical Parametrical Oscillator Based on Periodically Poled MgO∶LiNbO_3 Crystal YAO Jiang-hong,LIU Zhi-wei,XUE Liang-ping,YAN Bo-xia,JIA Guo-zhi,XU Jing-jun,ZHANG Guang-yin(The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials,Ministry of Education;Tianjin Key Laboratory of Photonics Materials and Technology for Information Science;TEDA Applied Physics School,Nankai University,Tianjin 300457,China)
Properties of Strong Coupling Bound Polaron in Parabolic Quantum Dot CHEN Shi-hua1,XIAO Jing-lin2(1.College of Sciences,Huzhou Vocational Technology College,Huzhou 313000,China;2.College of Physics and Electromechanics,Inner Mongolia National University,Tongliao 028043,China)
Properties of the Internal Excited State of the Polaron in Quantum Dot Wuyunqimuge,XIAO Jing-lin(College of Physics and Electromechanics,Inner Mongolia University for Nationalities,Tongliao 028043,China)
Influence of Interaction between Phonons on Properties of Polaron in a Quantum dot ZHANG Peng1, XIAO Jing-lin2(1.Department of Mathematic and Physics in the University of Petroleum,Beijing 102249,China;2. Colloge of Physics and Electromechanics,Inner Mongolia National University,Tongliao 028043,China)
Emission Mechanism in the Tb Complex Doped PVK System LI Xiu-fang1,DENG Zhen-bo1,ZHANG Yuan-yuan1,SHI Yu-meng1,WANG Rui-fen2(1.Key Laboratory of Luminescence and Optical Information Technology,Ministry of Education;Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;2.Department of Chemistry,Hebei Normal University,Shijiazhuang 050091,China)
Synthesis and Phosphorescence of a New Greenish-blue Light-emitting Iridium(Ⅲ)Bis(1-phenylpyridine)(1,2,4-triazole pyridine) ZHANG Xiu-ju1,2,XU Yun-hua1,SHI Hua-hong1(1.Polymer Optoelectronic Materials and Devices;Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology,South China University of Technology,Guangzhou 510640,China;2.Department of Materials,Jinan University,Guangzhou 510632,China)
Cu~+ Migration and Luminescence Aging in ACEL ZnS∶Cu Phosphor Grains ZHOU Lian-xiang(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)
VUV Luminescent Properties of M_2SiO_4∶Re(M=Mg,Ca,Ba)(Re=Ce~(3+),Tb~(3+)) HE Da-wei,LIU Hong-li,LU Peng-zhi,LI Xin(Key Laboratory of Luminescence and Optical Information,Ministry of Education;Institute of Optoelectronics Technology,Beijing Jiaotong University,Beijing 100044,China)
Preparation and Properties of Red Emitting Phosphor Gd_2Mo_3O_9∶Eu~(3+)for White LEDs ZHANG Guo-you1,ZHAO Xiao-xia2,3,MENG Qing-yu2,3,WANG Xiao-jun2(1.Department of Physics,Inner Mongolia National University,Tongliao 028043,China;2.Key Laboratory of Excited State Processes,Chinese Academy of Sciences,Changchun 130033,China;3.Graduate School of Chinese Academy of Sciences,Beijing 100049,China)
Up-conversion Luminescence of Er~(3+)and Er~(3+)/Yb~(3+)Ions Doped PLZT for Active Electro-optical Applications LI Bao-zeng1,GUO Hai1,CHEN Xue-sheng2,JIANG Hua3,ZHENG Zhi-qiang4,MING Hai1(1.Department of Physics,University of Science and Technology of China,Hefei 230026,China;2.Department of Physics and Astronomy,Wheaton College,Norton,MA 02766,USA ;3.Boston Applied Technologies,Inc.,Woburn,MA 01801,USA ;4.Department of Physics,Fujian Normal University,Fuzhou 350007,China)
Luminescent Properties and Selectivity IR Adsorption of Eu-doped Hydrotalcite-like Compounds LIU Jian-cai,LIAN Shi-xun,ZHU Ai-ling,LI Qi-hua,LIU Li-ming,ZENG Li-hua(Key Laboratory of Chemical Biology & Traditional Chinese Medicine Research,Ministry of Education;College of Chemistry and Chemical Engineering,Hunan Normal University,Changsha 410081,China)
Effect of Zn,Cd on the Luminescent Properties of CaTiO_3∶Pr~(3+) SHEN Lei-jun1,ZHAO Zeng-qi1,HAN Li1,ZHOU Yong-bo1,WAN Zuo-bo1,ZHANG Guo-bin2,ZHANG Dan-hong2(1.Baotou Research Institute of Rare Earths,Baotou 014010,China;2.National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China)
Synthesis and Luminescence of Nano-microcrystal of Gd_(1-x)Eu_xAl(BO_3)_4 MENG Jin-xian1,YAO Yan-hong2,KANG Zhen-Jin1(1.Science College of Yanbian University;2.Analysis and Testing Centre of Yanbian University,Yanji 133002,China)
Surface Modification of BaSi_2O_5∶Pb Phosphor YANG Qing-hua1,LI Li-quan1,WANG Hai-bo2(1.College of Materials Science and Engineering,Nanjing University of Technology,Nanjing 210009,China;2.Research Institute of Electric Light Source Materials,Nanjing University of Technology,Nanjing 210015,China)
Structure Properties of InN Quantum Dots in GaN Semiconductor CHEN Shan-shan,ZHENG Jiang-hai,LI Shu-ping,KANG Jun-yong*(Department of Physics and Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China)
Synthesis of CdS/Ag Particles in Phosphate Glass by UV Beam Irradiation YU Feng-bin,CHEN Fu-yi,JIE Wan-qi,WANG Tao(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China)
Micro Characteristics of InGaN/GaN Quantum Wells LIN Wei,LI Shu-ping,KANG Jun-yong*(Department of Physics and Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China)
Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band JIA Guo-zhi1,YAO Jiang-hong1,SHU Yong-chun1,WANG Zhan-guo1,2(1.The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials,Ministry of Education;Tianjin Key Laboratory of Photonics Materials and Technology for Information Science;TEDA Applied Physics School,Nankai University,Tianjin 300475,China;2.Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Temperature Dependence of Photoluminescence in Self-assembled Quantum Dots DENG Hao-liang1,YAO Jiang-hong2(1.Department of Mathematics and Physics,Tianjin University of Technology and Education,Tianjin 300222,China;2. Center of Photonics,The College of Physics Science,Nankai University,Tianjin 300071,China)
Finite Element Model of GaN Based LED and the Optimization of the Mesa Structure PAN Hua-pu,HUANG Li-wei,LI Rui,LIN Liang,CHEN Zhi-zhong,ZHANG Guo-yi,HU Xiao-dong(School of Physics;Research Center for Wide Band Gap Semiconductors;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Peking University,Beijing 100871,China)
Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity CHEN De-yuan,QIAN Bo,XU Jun,MEI Jia-xin,CHEN San,LI Wei,HUANG Xin-fan,CHEN Kun-ji(National Laboratory of Solid Microstructures and Department of Physics,Nanjing University,Nanjing 210093,China)
Sol-gel Synthesis of Organic-inorganic Composite Phosphor and Luminescence Properties ZHANG Rui-jun1,YAN Wei-ping2,MA Ling-zhi2(1.Department of Physics,Dalian University of Technology,Dalian 116024,China;2.Department of Electronic Engineering,Dalian University of Technology,Dalian 116024,China)
Relationship between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon ZHAO Yue1,3,ZHAO Jie2,LI Dong-sheng3,SANG Wen-bin1,YANG De-ren3,JIANG Min-hua3,4(1.School of Material Science and Engineering,Shanghai University,Shanghai 200072,China;2.Hailiang Group Co.Ltd,Zhuji 311835,China;3.State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;4.State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)
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