Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
Full-Text Search:
Power Electronics
FQ: 月刊
AD of Publication: 陕西省西安市
Lanuage: 中文;
ISSN: 1000-100X
CN: 61-1124/TM
YP: 1967
Url: 西安电力电子技术研究所
Recommended Journals
Power Electronics
2017 -08
Catalog
Research and Realization on Control Scheme of Four-quadrant Pulse Rectifier XIANGLI Yan-ni;YANG Wei;YUE Wen-kai;ZHANG Peng;CRRC Xi'an Yonge Jietong Electric Co.
Radiated EMI Noise Mechanism and Mitigation Method for Photovoltaic Inverter LI Lin;QIU Dong-mei;GAO Xing;YAN Wei;Jiangsu Institute of Metrology;
Research on Speed Sensorless Control Strategy of Doubly Fed Induction Generator Under Asymmetry Grid XU Feng-xing;LIU Lian-gen;SHE Yue;ZHANG Shao-yun;CRRC Zhuzhou Institute Cd.
Analysis and Experiment of Parasitic Parameters in Boost Circuit OU Huang;WU Wei;Suzhou Inovance Technology Corporation;
High-efficiency and Stable Grid-connected Photovoltaic Power Generation Equipment Based on Compound Correction Control WEI Xing;YANG Yong-jin;JIN Long;Southeast University;
Research on the Control Scheme for Inverter of Microgrid Based on Peer-to-peer Architecture XU Rui-dong;ZHOU Jian-yong;SONG Shu-zhen;WANG Bo-ya;China University of Mining and Technology;
Power Output Characteristics of Main Transformer in Distributed Series Compensation Device ZHANG Shuo;LIU Ya-dong;WANG Qi;JIANG Xiu-chen;Shanghai Jiao Tong University;
New Pattern of Direct Power Control for LCL-based Three-phase PWM Rectifier DING Bo-wen;FAN Bo;LIAO Zhi-ming;GUO Ning;Henan University of Science and Technology;
A Nonlinear Novel Control Method for the DSTATCOM in Compensating Unbalance Load ZHOU Hong-wei;HUANG Xiao-ming;Sichuan Water Conservancy Vocational College;
Research on a Grid Voltage Generator System With Dual Voltage Loop Structure LIU Hai-jian;LIU Gang;SUN Jian;HU Si-quan;Xuji Group Corporation
Development of SiC Power MOSFET BAI Song;HUANG Run-hua;TAO Yong-hong;LIU Ao;State Key Laboratory of Wide-bandgap Semiconductor Power Electronic Devices
Development of 3300 V/500 A SiC Hybrid Module for Traction Applications LIU Guo-you;PENG Yong-dian;CHANG Gui-qin;YU Wei;State Key Laboratory of Advanced Power Semiconductor Devices
An Introduction of Silicon Carbide Junction Barrier Controlled Schottky Rectifier and JBS Embedded MOSFET HSU Fu-jen;YEN Cheng-tyng;HUNG Chien-chung;LEE Chwan-ying;Hestia Power Inc.;
Recent Development of Wide Bandgap Semiconductor SiC Substrates YANG Xiang-long;XU Xian-gang;CHEN Xiu-fang;HU Xiao-bo;State Key Laboratory of Crystal Materials
Study of Static State Temperature Characteristics of SiC MOSFET WANG Yang;LU Zhi-fei;LI Shi-qiang;LI Jian-bo;State Grid Zhejiang Electric Power Corporation Zhoushan Power Supply Company;
The PCB Rogowski Coil Based on Short-circuit Protection of SiC MOSFET ZHANG Jing-wei;LI Xiao-hui;TAN Guo-jun;China University of Mining Technology;
Research on SiC IGBT On-state Characteristics Simulation LIU Guo-you;GAO Yun-bin;CHEN Xi-ming;LI Cheng-zhan;State Key Laboratory of Advanced Power Semiconductor Devices;
Industry Development of GaN Power Devices HE Liang;ZHENG Jie-xin;LIU Yang;Sun Yat-Sen University;
Vertical Gallium Nitride Power Devices:Current Status and Prospects ZHANG Yu-hao;PALACIOS Tomás;Department of Electrical Engineering and Computer Science
Progress in GaN Single Crystal Growth WANG Jian-feng;REN Guo-qiang;XU Ke;Suzhou Institute of Nano-tech and Nano-bionics
Key Technologies of GaN HEMT Power Electronic Devices YU Guo-hao;ZHANG Zhi-li;HAO Rong-hui;ZHANG Bao-shun;Suzhou Institute of Nano-tech and Nano-bionics
Insulated-gate GaN-based Lateral Power Switching Device Technology HUANG Sen;WANG Xin-hua;KANG Xuan-wu;LIU Xin-yu;Key Laboratory of Microelectronic Devices & Integrated Technology
SiC Lateral Devices on Semi-insulating Substrate Chih-Fang Huang;National Tsing Hua University;
Minority Carrier Transport Enhancement in SiC LTT by Graded Doping Profile WANG Xi;PU Hong-bin;LIU Qing;CHEN Zhi-ming;Xi'an University of Technology;
Epitaxial Growth of 4H-SiC for Ultra High Voltage p-IGBT Power Devices SUN Guo-sheng;ZHANG Xin-he;HAN Jing-rui;LIU Dan;Dongguan Tianyu Semiconductor Technology Co.
Analysis for Crosstalk of SiC MOSFET in 100 kHz Low Frequency Power Amplifier and the Driver Circuit Design LONG Gen;LUO Zhi-qing;ZHA Ming;ZHAO Jin-bo;Laboratory of Low-frequency Electro-magnetic Communication Technology With the 722 Research Institute
Research and Application of Intelligent Gate Driven for Medium High Voltage SiC IGBT MA Yong-bing;OUYANG Wen-jun;Nanjing College of Information Technology;
Enhancement-mode GaN Power Device and Integrated Technology ZHOU Jian-jun;KONG Cen;ZHANG Kai;KONG Yue-chan;State Key Laboratory of Wide-bandgap Semiconductor Power Electronics
Research and Development of Driving Technique for GaN Power Device ZHANG Hong;ZHENG Jie-xin;GUO Jian-ping;Sun Yat-sen University;
Gate Drive Design Considerations for Enhancement-mode GaN Power Devices MING Xin;ZHANG Xuan;ZHOU Qi;ZHANG Bo;University of Electronic Science and Technology of China;
GaN Power ICs Revolutionize High-density,High-efficiency,Cost-effective Power Conversion KINZER Dan;Navitas Semiconductor;
Review on Key Packaging Materials for Wide-band-gap Power Semiconductors WANG Zheng;LIU Wen;MEI Yun-hui;LU Guo-quan;Tianjin Key Laboratory of Advanced Joining Technology
Fabrication of Si Substrate GaN Based on Power Material and Devices LUO Rui-hong;NI Yi-qiang;Sinopower Semiconductor Co.
2017 Issues:  [02] [01] [03] [04] [05] [06]
More Issues:   [1996]   [1997]   [1998]   [1999]   [2000]   [2001]   [2002]   [2003]   [2004]   [2005]   [2006]   [2007]   [2008]   [2009]   [2010]   [2011]   [2012]   [2013]   [2014]   [2015]   [2016]
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved