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Semiconductor Technology
FQ: 月刊
AD of Publication: 河北省石家庄市
Lanuage: 中文;
ISSN: 1003-353X
CN: 13-1109/TN
YP: 1976
Url: 中国半导体行业协会;半导体专业情报网;中国电子科技集团公司第十三所
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Semiconductor Technology
2019 -06
Catalog
LED Driver Circuit with High Accuracy and High Conversion Efficiency Tang Junlong;Luo Lei;Zhou Binteng;Xiao Shixun;Xie Haiqing;Zou Wanghui;School of Physics & Electronic Science
A Passive Double Balanced Mixer with High Linearity Qu Hanbin;Gao Sixin;Zhang Xiaopeng;Gao Bo;North-China Integrated Circuit Co.;
Forward Current Transport Mechanism of Recess-Free AlGaN/GaN Schottky Barrier Diodes Wu Hao;Kang Xuanwu;Yang Bing;Zhang Jing;Zhao Zhibo;Sun Yue;Zheng Yingkui;Wei Ke;Yan Jiang;College of Information Science
X-Band Gate Recess Enhancement-Mode AlGaN/GaN HEMT on the Sapphire Substrate Gu Guodong;Dun Shaobo;Guo Hongyu;Han Tingting;Lü Yuanjie;Fang Yulong;Zhang Zhirong;Feng Zhihong;The 13th Research Institute
Effects of Passivation Process on the Interface Properties of Al_2O_3/InP MOS Capacitors Li Haiou;Li Xi;Li Yue;Liu Yingbo;Sun Tangyou;Li Qi;Li Chencheng;Chen Yonghe;Guangxi Key Laboratory of Precision Navigation Technology and Application
Effect of Cleaning Process on Point Defects on the Surface of Germanium Epitaxial Wafers Wang Yunbiao;He YuANDong;Lü Fei;Chen Ya′nan;Tian Yuan;Geng Li;The 46th Research Institute
Simulation of Total Ionizing Dose Effect in Tunneling- FET and MOSFET Based on FDSOI Chen Zhixi;Liu Qiang;Ren Qinghua;Liu Chenhe;Zhao Lantian;Yu Wenjie;Min Jiahua;School of Materials Science and Engineering
Effects of Different Pulse Operating Conditions on the Junction Temperature of the GaN HEMT Liu Xiamei;Zhai Yuwei;Qiao Yu'e;Liang Faguo;Zheng Shiqi;The 13th Research Institute
Development of the Nanosecond Solid-State Pulse Generator Based on DSRD Zhang Qi;Song Falun;Jin Xiao;Li Fei;Wang Ganping;Graduate School
Theory and Research Progress of the p-Type SiC Ohmic Contact Huang Lingqin;Xia Mali;Gu Xiaogang;School of Electrical Engineering & Automation
Design of the Digital Temperature Control System for the Chip Scale Atomic Clock MEMS Atomic Vapor Cell Liu Zhaojun;Li Kun;Li Yunchao;Hu Xuwen;Yan Shubin;Zhang Yanjun;Science and Technology on Electronic Test & Measurement Laboratory
Effects of NH_3 Plasma Passivation on the Interface of Al_2O_3/SiGe Zhu Xuanmin;Zhang Jing;Ma Xueli;Li Xiaoting;Yan Jiang;Li Yongliang;Wang Wenwu;School of Information Science
Method for Improving Properties of ZnO Thin Films Prepared on the Glass Substrate Zhang Caizhen;Chen Yonggang;Zhou Qinghua;School of Electronic and Information Engineering
Preparation of the Layered MoS_2 Film by PVT Method Qian Shengya;Yang Ruixia;Lan Feifei;School of Electronic and Information Engineering
Evaluation of the Crystal Quality of 4H-SiC Wafers by HRXRD Mapping Technique Yang Dandan;Wang Jian;Sun Kewei;Zhang Shengnan;Jin Lei;Cheng Hongjuan;Hao Jianmin;The 46th Research Institute
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