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Micronanoelectronic Technology
FQ: monthly
AD of Publication: China
Lanuage: English
ISSN: 1671-4776
CN: 13-1314/TN
YP: 1964
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Micronanoelectronic Technology
1994 -06
Catalog
Growth of InGaAs/GaAs Quantum Wells by Lp-MOCVD Li Jing
2in Diameter GaAs Polylaminate Epitaxial Material With Excellent Uniformity Xu Yongqiang
De-embedding Technique of Parasitic Element for FET Device Gao Jianjun
Technical Research of p Buried Layer LianYaguang
Resistive Property and Annealing Effect of Ni-Cr Alloy Films of IC Mu Jie
Delta I Noise Analysis for High Density Package Ren Huailong
Characteristic of WSi_xN_y Film Formed by Reactive Sputtering Wang Lixia
Processing of SiO_2 Film by Magnetron Sputtering Zong Wanhua
Substrates Technologies for Supercomputer Engineering Tian Minbo Liang Tongxiang
One of the Keys in Microelectronic Production:Development Trend of Environment Cleaning Technology Cai Junzhi
The advance in Power Devices and the Latest Turn-off thyristor Wang xin
The Forward Characteristics Simulation of EST Wang Xin
1994 Issues:  [06] [05] [04] [03] [02] [01]
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