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Micronanoelectronic Technology
FQ: monthly
AD of Publication: China
Lanuage: Chinese
ISSN: 1671-4776
CN: 13-1314/TN
YP: 1964
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Micronanoelectronic Technology
2001 -06
Catalog
Research and development of Ⅲ-Ⅴ based magnetic semiconductors YAN Fa wang
Material choices for 40Gb/s:SiGe vs GaAs and InP HE Jun
Research advances in GaN-based QW devices LI Jia wei
Seminconductor quantum well material ZHANG Chen
GaAs integrated circuit for optical communication CHENG Ying
New diluted magnetic semiconductor material(Ga,Mn)As based on GaAs LIU Li feng
Development and state of chinese semiconductor Si material JIANG Rong hua
Deep sub-micron synchrotron radiation x-ray lithography simulation XIE Chang qing
SiN_x∶H passivation of polycrystalline silicon solar cell YANG Hong
High voltage planar discrete semiconductor device with single field limiting rings WANG De wen 1
Fast recovery glass passivated diod dices ZHUANG Ming qian
Two-dimensional electron gases induced in AlGaN/GaN heterostructures XUE Fang shi
GaN film grown by low-pressure MOCVD YANG Hong wei
Influence of growing parameter on the performance of ZnO film in MC sputtering ZOU Lu
2001 Issues:  [06] [05] [04] [03] [02] [01]
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