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Micronanoelectronic Technology
FQ: 月刊
AD of Publication: 河北省石家庄市
Lanuage: 中文;
ISSN: 1671-4776
CN: 13-1314/TN
YP: 1964
Url: 中国电子科技集团公司第十三研究所
Recommended Journals
Micronanoelectronic Technology
2001 -01
Challenges and opportunities in billion-transistor system-on-a-chip integration YANG Hua zhong, 2HOU Chao huan, 1WANG Hui 1(Department of Electronic Engineering,Tsinghua University,Beijing 100084,China) 2(Institute of Acoustics,Chinese Academy of Sciences,Beijing 100080,China)
Development of linear power amplifier for communication LI Hao mo (The 13th Electronic Research Institute,Shijiazhuang 050051,China)
Integrated circuits technology for telecommunication in the 21st century WEI Shao jun (The Microelectronics Institute,Tsinghua University,Beijing 100081,China)
Development and prospect of semiconductor materials ZHOU Li jun (The 13th Electronic Research Institute,Shijiazhuang 050051,China)
World-width is the development trend of integrated circuit card LIN Wan xiao (Yongxing Electron company,Xindu 610500,China)
Summarization about single-chip microprocessor development system JU Shui rong (MOS Design Institute of Wuxi Huajing Semico Microelectronics Co.,Ltd.,Wuxi 214061,China)
Power semiconductor module and its technology WU Ji jun,WU Li li (Xian Power Electronics Research Institute,Xian 710061,China)
Application of SIMS in GaAs process MA Nong nong,HAN Xiang ming (The 46th Electronic Research Institute,Quality Inspection Centre,Tianjin 300192,China)
Design technologies of large area science CCD images CHEN Yi fei (Hebei Semiconductor Research Institute,Shijiazhuang 050051,China)
A Miniature QPSK modulator and amplifier module WANG Jiang,WANG Yi min (The 13th Electronic Research Institute,Shijiazhuang 050051,China)
Subdivided circuit is fulfilled in a PLD chip EPM7128LS84 WANG Yan fang,WANG Xiao ping,FAN Jin sheng,LIU Yu hong (Department of Electronic Engineering,Shijiazhuang Railway Institute,Shijiazhuang 050043,China)
Study on threshold voltage uniformith of GaAs MESFET fabricated in different process LI Chuan hai,MAO You de,DING Yong (HeFei University of Technology,Science College,Hefei 230009,China) LIU Ru ping,XIA Guan qun (Shanghai Insitute of Metallurgy,Solid state Device and System Laboratory,Shanghai 200050,China)
Temperature characteristic of transistors and problems on practical use WANG Jun (Shenai Semiconductor Company,Shenzhen 518000,China)
Analytical solutions for breakdown voltage and electric field distribution along junction edge for planar abrupt junction HE Jin (Misroelectronic Institute,Beijing University,Beijing 100871,China)
Study on the relation between sidegating effect and the distance of side-gate/MESFET of GaAs MESFETs DING Gan,CUI Li juan (Liuwang middle school of jiaonan shandong,Qingdao 260000,China) DING Yong,MAO You de (Hefei University of Technology,Hefei 230009,China) ZHAO Fu chuan,XIA Guan qun (Shanghai Institute of Metallurgy Chinese Academy of Scie
2001 Issues:  [01] [02] [03] [04] [05] [06]
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