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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
1989 -01
Catalog
Donor Levels of 3d-Transition Metal Impurities in ZnSe_(1-x)S_x Alloy System Gu Yiming/University of Science and Technology of China, HefeiHuang Mingzhu/University of Science and Technology of China, HefeiWang Kelin/University of Science and Technology of China, Hefei
Core Level Chemical Shift for Silicon Surface Atoms Xing Yirong/Institute of Semiconductors, Academia Sinica,BeijingZhong Xuefu/Institute of Semiconductors, Academia Sinica,Beijing
Ion Channeling Analysis of In_(0.25)Ga_(0.75)As/GaAs Strained Heterojunction Yin Shiduan/Institute of Semiconductors, Academia Sinica,BeijingWu Chunwu/Institute of Semiconductors, Academia Sinica,BeijingZhang Jingping/Institute of Semiconductors, Academia Sinica,BeijingLiu Jiarui/Institute of Physics, Academia Sinica.BeijingZhu Peiran/Institute of Physics, Academia Sinica.Beijing
Study of Positron Annihilation Characteristics in SI-n-GaAs Wu Fengmei/Departmant of Physics, Nanjing University, NanjingShen Dexun/Departmant of Physics, Nanjing University, NanjingDeng Minkang/Departmant of Physics, Nanjing University, NanjingCheng Ling/Departmant of Physics, Nanjing University, NanjingTang Jie/Departmant of Physics, Nanjing University, NanjingZhang Dehong/Nanjing Electronic Device Institute, Nanjing
Spectroellipsometric Response of Pt-Si Interface and Optical Properties of Silicide PtSi Chen Tupei/Department of Physics, Zhongshan University, GuangzhouHuang Bingzhong/Department of Physics, Zhongshan University, Guangzhou
Via Optinization Algorithm of 2-Layer Wiring in VLSI Li Yingmeng/Department of Electronics Engineering, Fudan Univcrsity ShanghaiTang Pushan/Department of Electronics Engineering, Fudan Univcrsity Shanghai
CEXTOR: A Circuit Extractor for MOS IC Technology Song Hua/Department of Electronics Engineering, Fudan University.ShanghaiTang Pushang/Department of Electronics Engineering, Fudan University.ShanghaiZhang Keih/Department of Electronics Engineering, Fudan University.ShanghaiLing Xieting/Department of Electronics Engineering, Fudan University.Shanghai
Investigation of G-R Noise Induced by Defects in P-N Junetion of Bipolar Transistor Dai Yisong/Jilin University of Technology, Changchun
A Fully Integrated Flow Sensor Huang Jinbiao/Microelectronics Center, Nanjing Institute of TechnologyLi Bin/Microelectronics Center, Nanjing Institute of TechnologyTong Qinyi/Microelectronics Center, Nanjing Institute of TechnologyZhou Ming/Yangzhou Semiconductor Factory
Control and Adjustment of Threshold Voltage of pH-ISFET by Using Ion Implantation Wang Zhengxiao/Institute of Semiconductors,Academia Sinica,Beijing
A New High Sensitivity GaAs Hall Devices Fabricated by means of Stationary Domain Model Zheng Yiyang/Institute of Semiconductors,Academia Sinica,Beijing
Ion-Implantation and RTA in Laser Crystallized a-Si:H SOI Gu Qing/Departmemt of Physics, Nanjing University. NanjingBao Ximao/Departmemt of Physics, Nanjing University. Nanjing
Observation of Structure Defects in Doped-Te GaAs Single Crystal Grown in Space Jiang Sinan/Institute of Semiconductors, Academia Sinica, BeijingFan Tiwen/Institute of Semiconductors, Academia Sinica, BeijingLi Chengji/Institute of Semiconductors, Academia Sinica, BeijingLn Lanying/Institute of Semiconductors, Academia Sinica, Beijing
1989 Issues:  [01] [02] [03] [04] [05] [06] [07] [08] [09] [10] [11] [12]
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