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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
1991 -01
Catalog
Study on Deep Donor Levels in Te-Doped GaAsP Zhang Wenqing/Department of Physics, Xiamen University, XiamenHuang Qisheng/Department of Physics, Xiamen University, XiamenKang Junyong/Department of Physics, Xiamen University, Xiamen
Study on Characteristics of Gold Acceptor in Silicon by Dynamic Photovoltaic Effect at Low Temperatures Yan Yongmei/Xiamen University
Double Phonon Replica for Photoluminescence Spectra of GaP:N(Te) Qian Youhua/Department of Physics, Fudan University, ShanghaiDing Lei/Department of Physics, Fudan University, ShanghaiZheng Siding/Center of Measurements, Fudan University, Shanghai
Raman Studies of Microstructures in Crystallite Silicon Doped with Boron Cheng Guangxu/Center of Material Analysis and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R. C.Chen Kunji/Center of Material Analysis and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R. C.Zhu Yuping/Center of Material Analysis and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R. C.Xia Hua/Center of Material Analysis and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R. C.Zhang Xingkui/Center of Material Analysis and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, P. R. C.Qi Jianbang/Department of Physics, Chinese University, Hong KongWang Conghe/Department of Physics, Chinese University, Hong Kong
Study on Crystal Perfection of Semiconductor Surfaces by SEM Electron Path Patterns Qiu Sujuan/The 13th Institute of Ministry of Mochinery & Electronics IndustriesLin Qiquan/The 13th Institute of Ministry of Mochinery & Electronics Industries
Investigation of Rapid Thermally Nitrided-SiO_2/Si Interface with Conductance Technique Liu Zhihong/Department of Electrical and Electronic Engineering.University of Hong Kong, Hong KongMa Zhijian/Department of Electrical and Electronic Engineering.University of Hong Kong, Hong KongLi Peitao/Department of Electrical and Electronic Engineering.University of Hong Kong, Hong KongZheng Yaozong/Department of Electrical and Electronic Engineering.University of Hong Kong, Hong KongLiu Baiyong/Department of Physics, South China University of Technology, Guangzhou,510641
Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors Wang Yinsheng/Nanjing Electronic Devices Institute, NanjingSheng Wenwei/Nanjing Electronic Devices Institute, NanjingZhang Xiaoming/Nanjing Electronic Devices Institute, NanjingWang Xiaowen/Nanjing Electronic Devices Institute, Nanjing
FPCS: A Placement and Floorplanning System for Building Block Layout Bo Jianguo/Beijing Software Lab., Academia Sinica, BeijingYu Mingyong/Beijing Software Lab., Academia Sinica, BeijingYin Jinbai/Beijing Software Lab., Academia Sinica, BeijingZhuang Wenjun/Beijing Software Lab., Academia Sinica, BeijingHong Xianlong/Department of Computer, Tsinghua University, BeijingLian Yongjun/Beijing IC Design Center
Photoreflectance Study on Modulation-Doped Structures Tang Yinsheng/The Center of Matter Structure analysis and the Center of Fundamental Physics,The Science and Technology University of China, HerfeiJiang Desheng/Institute of Semiconductors and National Laboratory of Semiconductor Superattices and Related Mierostructures, Academia Sinica, BeijingZhuang Weihua/Institute of Semiconductors and National Laboratory of Semiconductor Superattices and Related Mierostructures, Academia Sinica, BeijingKong Meiying/Institute of Semiconductors and National Laboratory of Semiconductor Superattices and Related Mierostructures, Academia Sinica, BeijingXu Yingwu/The Center of Matter Structure analysis and the Center of Fundamental Physics,The Science and Technology University of China, Herfei
Characteristic of Infrared Absorption Peaks at 708cm~(-1),742cm~(-1), 776cm~(-1)in NTD CZ-Si He Xiukun/Tianjin Electronic Material Research InstituteWang Qin/Tianjin Electronic Material Research InstituteLi Guangping/Tianjin Electronic Material Research Institute
Deposition of ITO Films in Low Temperature Plasma Jia Yongxin/Luminescence Lab., Hebei UniversityYang Zhiping/Luminescence Lab., Hebei UniversityXie Xiaoyang/Luminescence Lab., Hebei UniversityLi Zhiqiang/Luminescence Lab., Hebei University
1991 Issues:  [01] [02] [03]
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