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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2000 -01
Catalog
C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects MA Yu tao, LIU Li tianand LI Zhi jian(Institute of Microelectronics, Tsinghua University, Beijing\ 100084, China)
Surface Oxidative Characterization of LPE HgCdTe Epilayer Studied by X\|ray Photoelectron Spectroscopy\+* LI Yi, YI Xin\|jianand CAI Li\|ping(Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan\ 430074, China)
Optimization of a 1×8 Arrayed\|Waveguide Grating Multi/Demultiplexer\+* OU Hai yan, LEI Hong bing, YANG Qin qing and WANG Qi ming(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China)HU Xiong\|wei(胡雄伟)(National Research Center of Opto
Photocurrent Measurement of Si 1-x Ge\-x/Si Multiple Quantum Wells With Ion Implantation and Thermal Annealing\+* LI Cheng, YANG Qin\|qing, WANG Hong\|jie, LUO Li\|ping, CHENG Bu\|wen, YU Jing\|zhong and WANG Qi\|ming(National Integrated Optoelectronics Laboratory, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083,China)CHEN Yong\|hai(
Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays WANG Xing\|hua, SONG Ai\|min, CHENG Wen\|chao, LI Guo\|hua, LI Cheng\|fang, LI Yue\|xia( and TAN Ping\|heng)(National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,The Chinese Academy of Sciences,Beijing\ 100083,China)
Ultralow Threshold Red Vertical\|Cavity Surface\|Emitting Lasers\+* CHENG Peng, GAO Jun hua, KANG Xue jun, LIN Shi ming, ZHANG Guang bin, LIU Shi\|an and HU Guo xin(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, The Chinese Academy of Sciences, Beijing\ 100083, China)
Spontaneous Emission in Quantum Well Planar Micro\|Cavities with Metallic Mirrors * ZHAO Hong\|dong 1,2,3 , ZHANG Cun\|shan\+2, ZHOU Ge 1, SHEN Guang\|di 3 and ZHANG Yi\|mo 1(1\ Optoelectronics Information Science and Technology Laboratory, College of Precision Instrument & Optoelectronics Engineering,Tianjin University, Tian
Surface Passivation of Porous Silicon by Si0_x and Al_2O_3 Films * LIU Xiao\|bing\+1, XIONG Zu\|hong, SHI Xiang\|hua\+1, YUAN Shuai and LIAO Liang\|sheng(Surface Physics Laboratory,Fudan University, Shanghai\ 200433, China) (1\ Physics Department,Changsha Electric Power University, Changsha\ 410077, China)Received 13 O
Property of High Quality Carbon Doped GaAs/AlGaAs Materials Grown by MOCVD * LIAN Peng, ZOU De\|shu, GAO Guo, YIN Tao, CHEN Chang\|hua, XU Zun\|tu, CHEN Jian\|xin and SHEN Guang\|di(Department of Electronic Engineering, Beijing Polytechnic University and Beijing Optoelectronic Laboratory, Beijing\ 100022, China)CAO Qing, MA Xi
Persistent Photo\|Conductivity in Ga δ\|Doped ZnSe Superlattices * HU Gu\|jin, ZHANG Lei, DAI Ning and CHEN Liang\|yao(Department of Physics, Fudan University, Shanghai\ 200433, China)Received 8 October 1998, revised manuscript received 17 December 1998
Analysis of Current Gain in Al_(0.3) Ga_(0.22) In_(0.48) P/GaAs HBT at High Temperature\+* WU Jie, XIA Guan\|qun, SHU Wei\|min, GU Wei\|dong and ZHANG Xing\|hong(Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai\ 200050, China)Received 30 August 1998, revised manuscript received 21 November 1998
Back\|Gating Effect of GaAs MESFET on Undoped SI\|GaAs\+* LIU Ru\|ping, XIA Guan\|qun, ZHAO Jianlong, WENG Jian\|hua, ZHANG Mei\|sheng and HAO You\|sheng(Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai\ 200050, China)Received 15 July 1998, revised manuscript received 26 December 1
Novel Programmable and Expandable Hamming Neural Network * LIN Gu and SHI Bing\|xue(Institute of Microelectronics, Tsinghua University, Beijing\ 100084, China)Received 18 August 1998, revised manuscript received 7 April 1999
Highly Bright Yellow\|Emitting Organic Diode * HUANG Jin\|song, XIE Zhi\|yuan, YANG Kai\|xia, LI Chuan\|nan, HOU Jing\|ying and LIU Shi\|yong(National Integrated Optoelectronics Laboratory, Jilin University, Changchun\ 130023, China) NAN Jin and DAI Guo\|rui(Department of Electronic Engineerin
Zn_(1-x)Cd_xSe/ZnSe Quantum\|Confined Stark Effect Photomodulator * TANG Jiu\|yao(Department of Physics, Zhejiang University, Hangzhou\ 310027, China)Y.Kawakami and Sg.Fujita(Department of Electronic Science and Engineering, Kyoto University, Kyoto 606, Japan)Received 14 September 1998
Improved Spectral Characteristics of DFB Lasers by Added Coating * BI Ke\|kui, WANG Xiao\|jie and ZHU Hong\|liang(National Research Center for Optoelectronic Technology,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing\ 100083, China)Received 20 July 1998, revised manuscript received 24 September 19
Measurement of Nonlinear Susceptibility for Semiconductor Microstructures by Modulation Spectroscopy\+* WANG Ruo\|zhen and TIAN Qiang(Department of Physics, Beijing Normal Univesity, Beijing\ 100875, China) JIANG De\|sheng(National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, The Chinese Academy of Science, Beijing\ 10
158MHz Surface Acoustic Wave Fixed\| Delay Line on GaAs\+* LI Hong\|qin and XIA Guan\|qun(Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai\ 200050, China)Received 11 July 1998, revised manuscript received 29 November 1998
Base Transport Model for Ultra\|Thin\|Base SiGe HBT LI Yao, KONG De\|yi, WEI Jing\|he, XU Ju\|yan(Wuxi Research Institute of Applied Science and Engineering of Southeast University, Wuxi\ 214071, China)Received 27 July 1998, revised manuscript received 25 March 1999
157W Q\|CW AlGaAs/GaAs Linear Laser Diode Arrays FANG Gao\|zhan, XIAO Jian\|wei, MA Xiao\|yu, TAN Man\|qing, LIU Zong\|shun, LIU Su\|ping, HU Chang\|hong, LU Lin, LI Xiu\|fang and WANG Mei(Institute of Semiconductors, The Chinese Academy of Sciences, National Engineering Research Center for Optoelectr
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