Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
Full-Text Search:
半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
半导体学报(英文版)
2002 -01
Catalog
Electrical Transport Properties of Annealed Undoped InP Zhao Youwen 1,Luo Yilin 2,Sun Niefeng 3,S Fung 4,C D Beling 4,Sun Tongnian 3 and Lin Lanyin 1(1 Materials Science Centre,Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China) (2 Department of Physics,Shantou Univers
A BEEM Study on Effects of Annealing Temperature on Barrier Height Inhomogeneity of CoSi_2/Si Contact Formed in Co-Ti-Si Systems Zhu Shiyang 1,Qu Xinping 1,Ru Guoping 1,Li Bingzong 1,C Detaveriner 2, R L van Meirhaeghe 2 and F Cardon 2(1 Department of Microelectronics,Fudan University,Shanghai 200433,China) (2 Department of Solid State Science,University of Gent,Krijg
New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs He Jin,Zhang Xing,Huang Ru and Wang Yangyuan(Institute of Microelectronics,Peking University,Beijing 100871,China)
Near-Infrared Si_(0.7)Ge_(0.3)/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology Guo Hui 1,Guo Weilian 1,Zheng Yunguang 1,Li Chen 2,Chen Peiyi 2,Li Shurong 1 and Wu Xiawan 1(1 School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China) (2 Institute of Microelectronics,Tsinghua University,Beijing 100
Study on Vacuum Sensitive Mechanism of Surface States Silicon by Photovoltaic Method Yan Yongmei,Sun Yiyang,Ding Xiaoyong and Zhou Haiwen(Department of Physics,Xiamen University,Xiamen 361005,China)
Photoluminescence of (Ga,Mn,As)/GaAs Yang Junling 1,Chen Nuofu 1,2 ,Ye Xiaoling 1 and He Hongjia 1(1 Laboratory of Semiconductor Materials Science,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2 National Microgravity Laboratory of China,Beijing
Metal-Ferroelectric-GaN Structures Bi Zhaoxia,Zhang Rong,Li Weiping,Yin Jiang,Shen Bo,Zhou Yugang,Chen Peng, Chen Zhizhong,Gu Shulin,Shi Yi,Liu Zhiguo and Zheng Youdou(National Laboratory of Solid State Microstructures,Department of Physics,Nanjing University,Nanjing 210093,China)
Photoluminescence from Passivation Porous Silicon Li Hongjian 1,Peng Jingcui 1,Xu Xuemei 1,2 ,Qu Shu 1 and Xia Hui 1(1 The Institute of Optoelectronic Materials,Hunan University,Changsha 410082,China) (2 Department of Materials Science,Centersouth University,Changsha 410083,China)
Effect of Fabrication Conditions and Aging Time on Photoluminescence of Porous Silicon Ke Jianhong,Zheng Yizhuang,Chi Xianxing and Cheng Xinhong(Department of Physics and Electronic Information Science,Wenzhou Teacher's College,Wenzhou 325027,China)
Reaction of Hydrogen with Neutron-Irradiation-Induced Defects in Crystalline Silicon Wang Qiyuan,Lin Lanying,Wang Jianhua,Deng Huifang,Tan Liwen,Wang Jun, Cai Tianhai and Yu Yuanhuan(Materials Science Centre,Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China)
A Comparison of Electric Properties of Back-Field Si Solar Cell and GaAs/Ge Solar Cell for Space Use as a Function of Proton Irradiation Fluence Wang Rong 1,2 ,Zhou Hongyu 1,2 ,Si Geli 2,Yao Shude 3,Zhang Xinhui 4, Guo Zengliang 4,Zhai Zuoxu 4,Wang Yongang 5 and Zhu Shengyun 6(1 The Key Laboratory of Beam Technology and Materials Modification of Ministry of Education,Beijing Norm
Uniformity of Undoped Semi-Insulating Indium Phosphide Wafers Dong Hongwei,Zhao Youwen,Jiao Jinghua,Zhao Jianqun and Lin Lanying(Laboratory of Semiconductor Materials Science,Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China)
Solid Source Molecular Beam Epitaxy Growth of InAsP Using As_2 and As_4 Modes Ren Zaiyuan,Hao Zhibiao,He Wei and Luo Yi(State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering, Tsinghua University,Beijing 100084,China)
Hot-Carrier Damage of PMOSFET's Identified by Direct Gate Current Measurement Zhang Jincheng,Hao Yue and Liu Haibo(Institute of Microelectronics,Xidian University,Xi'an 710071,China)
Channel Hot-Carriers Induced Degradation Behavior in SOI NMOSFET's Liu Hongxia,HaoYue and Zhu Jiangang(Institute of Microelectronics,Xidian University, Xi'an 710071, China)
Estimation of Widths of Si-SiO_2 Interfaces in Metal-Oxide-Semiconductor Structures from FN Tunneling Current Oscillations Yang Yao 1,2 and Mao Lingfeng 3(1 Department of Physics,Xidian University,Xi'an 710071,China) (2 Laboratory of JS66,No 207 Institute,China Aerospace,Beijing 100854,China)(3 Institute of Microelectronics,Peking University,Beijing 100871,China)
Breakdown Protection Characteristics for F and N Implanted Ultra-Thin Gate Oxide Han Dedong,Zhang Guoqiang,Ren Diyuan,Lu Wu and Yan Rongliang(Xinjiang Institute of Physics,The Chinese Academy of Sciences,Urumqi 830011,China)
An Optimization Method for Designing AWG Based on BPM Pan Xiaolong 1 and Zhao Zisen 2(1 Huazhong University of Science and Technology,Wuhan 430074,China) (2 Wuhan Research Institute of Post and Telecommunication,Wuhan 430074,China)
Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers Mao Luhong 1,Chen Hongda 1,Tang Jun 1,Liang Kun 1,Wu Ronghan 1, Nian Hua 2,Guo Weilian 2 and Wu Xiawan 2(1 State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2
Polymer Thermooptic Phase Shifter and Its Applications Yang Xiaohong 1,Du Yun 1,Wu Ronghan 1,Zhao Yuxia 2,Li Zhao 2,Zhou Jiayun 2 and Shen Yuquan 2(1 National Research Center for Optoelectronic Technology,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2 Institute
Fabrication of Nanoelectronic Resonant Tunneling Diodes Liang Huilai 1,Zhao Zhenbo 1,Guo Weilian 1,Zhang Shilin 1,Niu Pingjuan 1,Yang Zhongyue 2, Hao Jingchen 2,Zhang Yuqian 2,Wang Wenjun 2,Wei Bihua 2,Zhou Junming 3 and Wang Wenxin 3(1 Academy of Electronic Information Engineering,Tianjin Univers
Realization of Device Synthesis Using Genetic Algorithms Xie Xiaofeng,Li Zhao,Ruan Jun,Yao Yi,Zhang Wenjun and Yang Zhilian(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Computation Model and Realization Method of IC Critical Area Based on Etching Process Zhao Tianxu 1,2 ,Hao Yue 1 and Ma Peijun 1(1 Institute of Microelectronics,Xidian University,Xi'an 710071,China) (2 Department of Mathematics,Baoji College of Arts and Sciences,Baoji 721007,China)
A New Gridless Ripup and Reroute Algorithm Xie Min,Cai Yici and Hong Xianlong(Department of Computer Science & Technology,Tsinghua University,Beijing 100084,China)
2002 Issues:  [01] [02] [03] [04] [05] [06] [07] [08] [09] [10] [11] [12]
More Issues:   [1983]   [1988]   [1989]   [1990]   [1991]   [1992]   [2000]   [2001]   [2003]   [2004]   [2005]   [2006]   [2007]   [2008]   [2009]   [2010]   [2011]   [2012]   [2013]   [2014]   [2015]   [2016]   [2017]   [2018]
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved