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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2003 -04
Catalog
Synthesis of GaN Nanorods with Herringbone Morphology Yang Li 1,Zhuang Huizhao 1,Wang Cuimei 2,Wei Qinqin 1 and Xue Chengshan 1Project supported by National Natural Science Foundation of China (Nos.90201025,60071006) Yang Li male,was born in 1977,graduate students.He is engaged in the research of nanometer opto electronic materials. Zhuang Huizhao female,was born in 1954,associate professor and advisor of graduate students.She is engaged in the research of nanometer opto electronic materials. Xue Chengshan male,was born in 1945,professor and advisor of graduate students.He is engaged in the research of nanometer opto electronic materials. Received 18 September 2002,revised manuscript received 19 November 2002○[KG-3/4][JX-5]c 2003 The Chinese Institute of Electronics(1 Chemistry Function Materials Laboratory,Institute of Semiconductors,Shandong Normal University,Ji'nan 250014,China) (2 Physics Department,Shandong Normal University,Ji'nan 250014,China)
Selective Area Growth InGaAsP by MOVPE Qiu Weibin,Dong Jie,Wang Wei and Zhou FanProject supported by National Natural Science Foundation of China(No.90101023) Received 23 September 2002,revised manuscript received 15 November 2002○c 2003 The Chinese Institute of Electronics(National Research Center for Optoelectronic Technology,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China)
Micromechanical Tunable Optical Filter Zhang Ruikang 1,Yang Xiaohong 2,Zhou Zhen 1,Xu Yingqiang 2,Zhang Wei 2,Du Yun 2, Huang Yongqing 1,Ren Xiaomin 1,Niu Zhichuan 2 and Wu Ronghan 2Project supported by National Natural Science Foundation of China (Nos.90104003 and 60137020),National High Technology Research and Development Program of China (No.2002AA31229Z) and State Key Development Program for Basic Research of China (No.G2000036603) Zhang Ruikang male,was born in 1973.He is engaged in the research on semiconductor materials and devices. Received 14 October 2002,revised manuscript received 16 December 2002○c 2003 The Chinese Institute of Electronics(1 Beijing University of Posts and Telecomunications,Beijing 100876,China) (2 Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China)
CMOS FinFET Fabricated on Bulk Silicon Substrate Yin Huaxiang and Xu QiuxiaProject supported by National Natural Science Foundation of China(No.60176010) and State "973" Project (No.G200036504) Yin Huaxiang male,PhD candidate.His work focuses on the ultra small MOS device with new structure. Xu Qiuxia female,professor.Her current research interests include 20~50nm device structure,key technology and technology integration. Received 23 August 2002,revised manuscript received 23 October 2002○c 2003 The Chinese Institute of Electronics(Microelectronics Research & Development Center,The Chinese Academy of Sciences,Beijing 100029,China)
A Kernel-Based Convolution Method to Calculate Sparse Aerial Image Intensity for Lithography Simulation Shi Zheng 1,Wang Guoxiong 1,2 ,Yan Xiaolang 1,Chen Zhijin 1 and Gao Gensheng 1Project supported by National Natural Science Foundation of China(No.60176015) Shi Zheng male,was born in 1967,associate professor working on IC CAD. Wang Guoxiong male,was born in 1970,PhD candidate working on precisely designing technology of VDSM/UDSM IC masks. Yan Xiaolang male,was born in 1947,professor working on VLSI layout algorithm. Received 4 October 2002,revised manuscript received 22 November 2002○c 2003 The Chinese Institute of Electronics(1 Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China) (2 College of Electronics and Information Engineering,Anshan University of Science and Technology,Anshan 114002,China)
Single Layer Growth of Strained Epitaxy at Low Temperature Duan Ruifei,Wang Baoqiang,Zhu Zhanping and Zeng YipingDuan Ruifei male,was born in 1975,PhD candidate.He is engaged in InGaAs quantum dot and its applications for infrared photodetector. Zeng Yiping male,was born in 1961,professor.He is engaged in MBE epitaxy of Ⅲ Ⅴ semiconductor materials and the development of high frequency and high speed communicational and other microstructure devices. Received 16 July 2002,revised manuscript received 16 September 2002○c 2003 The Chinese Institute of Electronics(Novel Materials Department,Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China)
An 8.5GHz 1∶8 Frequency Divider in 0.35μm CMOS Technology Lu Jianhua 1,Wang Zhigong 1,Tian Lei 1,Chen Haitao 1,Xie Tingting 1,Chen Zhiheng 1, Dong Yi 2 and Xie Shizhong 2Project supported by National High Technology Research and Development Program of China(No.863 307 16 07) Lu Jianhua male,PhD candidate.He is working in the field of high speed/frequency ICs. Received 18 April 2002○c 2003 The Chinese Institute of Electronics(1 Institute of RF & OEICs,Southeast University,Nanjing 210096,China) (2 Department of Electronic Engineering,Tsinghua University,Beijing 100084,China)
Pressure Behavior Study of Emission from ZnS_(1-x)Te_x Mixed Crystal Fang Zaili 1,Su Fuhai 1,Ma Baoshan 1,Liu Nanzhu 1,Zhu Zuoming 1,Ding Kun 1, Han Hexiang 1,Li Guohua 1,Ge Weikun 2 and Sou I K 2Project supported by National Natural Science Foundation of China (No. 60176008) Fang Zaili male,was born in 1976,PhD candidate.His research interests are in the optical properties of semiconductors. Li Guohua male,was born in 1945,professor.He is engaged in the research on the semiconductor spectrum. Received 24 June 2002,revised manuscript received 30 August 2002○c 2003 The Chinese Institute of Electronics(1 National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2 Department of Physics,The Hong Kong University of Science and Technology,Kowloon,Hong Kong,China)
Optical Properties of ZnSe/ZnS_xSe_(1-x) Strained-Layer Supperlattics by Molecular Beam Epitaxy Shi Xianghua 1,2 ,Wang Xingjun 2,Yu Gencai 2 and Hou Xiaoyuan 2(1 Department of Physics,Changsha Electrical Power University,Changsha 410077,China) (2 National Key Laboratory for Surface Physics,Fudan University,Shanghai 200433,China)
Phtoluminenscence from Er~(3+) Ions in a-SiN_yO_x Films Deng Wenyuan,Zhang Jiahua,Ma Shaojie,Kong Xianggui,Song Hongwei and Xu WuProject supported by Natural Science Foundation of Jilin Province (No.20010581) Deng Wenyuan male,was born in 1974,MS degree.He is interested in Er doped broadband PL materials. Received 1 June 2002,revised manuscript received 17 August 2002○c 2003 The Chinese Institute of Electronics(Laboratory of Excited State Process,The Chinese Academy of Sciences,Changchun Institute of Optics,Fine Mechanics and Physics, The Chinese Academy of Sciences,Changchun 130021,China)
Preparation and Properties of GaN Films on GaAs (110) Substrates Yang Yingge 1,Ma Honglei 1,Xue Chengshan 2,Zhuang Huizhao 2,Hao Xiaotao 1 and Ma Jin 1Project supported by National Natural Science Foundation of China (No.6771006) Received 9 June 2002,revised manuscript received 6 August 2002○c 2003 The Chinese Institute of Electronics(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 Institute of Semiconductors,Shandong Normal University,Ji'nan 250014,China)
Parasitic Effect of a-Si∶H TFT Song Yue 1,2 and Zou Xuecheng 2Project supported by National Defence Fund (No.99J2.4.1.JW0514) Song Yue male,was born in 1963,associated professor.His researching work is focusing on the TFT AMLCD. Zou Xuecheng male,was born in 1964,professor.He is now focusing on the study of TFT AMLCD. Received 11 June 2002,revised manuscript received 7 October 2002○c 2003 The Chinese Institute of Electronics(1 Department of Physics and Information Engineering,Xiangtan Normal University,Xiangtan 411201,China) (2 Department of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,China)
Deep-Trench Termination of Bipolar RF Power Devices Zhou Rong,Hu Sifu,Li Zhaoji and Zhang QingzhongZhou Rong female,was born in 1968,lecture,PhD.Her research areas include semiconductor power devices and IC CAD. Hu Sifu male,was born in 1938,professor.He is engaged in research on semiconductor devices and fine process technology. Li Zhaoji male,was born in 1940,professor.He is engaged in semiconductor power devices. Received 1 June 2002,revised manuscript received 23 September 2002○c 2003 The Chinese Institute of Electronics(Department of Microelectronic Science & Technology,University of Electronic Science and Technology of China,Chengdu 610054,China)
MEMS Class E Amplifier Gu Hongming 1,Lü Miao 2,Liang Chunguang 2 and Gao Baoxin 1Project supported by State Key Laboratory on High Speed GaAs Integrated Circuit(No.00JS02.7.1.JS0206) and State Key Laboratory on Micro and Nano Fabrication Technology (No.00JS97.4.1.DJ2306) Gu Hongming male,was born in 1976,PhD candidate.He is engaged in RF MEMS and circuit. Gao Baoxin male,was born in 1934,professor.He is engaged in the research on MMIC,microwave active circuit,CAD technology and MEMS. Liang Chunguang male,was born in 1939,academician of The Chinese Academy of Engineering.He is engaged in the research on optoelectronics,microwave and millimeter wave device,and MEMS. Received 30 May 2002,revised manuscript received 27 September 2002○c 2003 The Chinese Institute of Electronics(1 Department of Electronic Engineering,Tsinghua University,Beijing 100084,China) (2 Hebei Semiconductor Research Institute,Shijiazhuang 050051,China)
Self-Aligned InGaP/GaAs HBT Monolithic Transimpedance Amplifier Wang Yanfeng,Sun Haifeng,Liu Xinyu,He Zhijing and Wu DexinReceived 29 May 2002,revised manuscript received 22 July 2002○c 2003 The Chinese Institute of Electronics(Microelectronics R&D Center,The Chinese Academy of Sciences,Beijing 100029,China)
A Novel High-Yield InP-Based T-Shaped Nanometer-Gate Fabrication Technique Shi Huafen 1,2 ,Zhang Haiying 1,Liu Xunchun 1,Chen Baoqin 1,Liu Ming 1 and Wang Yunxiang 1,2 Project supported by State Key Development Program for Basic Research of China(No.G200006830404) Shi Huafen female,was born in 1978,graduate student.Her research interests are compound semiconductor devices and MMICs. Zhang Haiying female,was born in 1964,associate professor.Her research interests are compound semiconductor devices,MMICs,and high density plasma etching technology. Liu Xunchun male,was born in 1943,professor.His research interests are compound semiconductor devices,MMICs and high density plasma etching technology. Received 20 June 2002,revised manuscript received 25 September 2002○c 2003 The Chinese Institute of Electronics(1 Microelectronics R&D Center,The Chinese Academy of Sciences,Beijing 100029,China) (2 Graduate School of The Chinese Academy of Sciences,Beijing 100039,China)
Design of a 1V,19GHz CMOS Frequency Divider Zeng Xiaojun,Li Tianwang and Hong ZhiliangZeng Xiaojun male,was born in 1968,PhD.His main research area includes digital signal processing and high speed digital circuit design. Li Tianwang male,was born in 1968,PhD.His main research area includes mixed signal and RF circuit design. Hong Zhiliang male,was born in 1946,PhD,professor,advisor of PhD student,involved in research of VLSI design,special interest in high speed analog and mixed signal circuit design. Received 14 May 2002,revised manuscript received 7 July 2002○c 2003 The Chinese Institute of Electronics(Department of Electronic Engineering,Fudan University,Shanghai 200433,China)
Clocked Quasi-Static Energy Recovery Logic Dai Hongyu and Zhou RundeProject supported by National Natural Science Foundations of China(No.59995550 1) Dai Hongyu male,was born in 1975,PhD candidate.His research interests are low power CMOS circuit design and embedded system design. Zhou Runde male,was born in 1945,professor and advisor of PhD candidates.His research interests are low power IC design and embedded system structure. Received 15 May 2002,revised manuscript received 3 September 2002○c 2003 The Chinese Institute of Electronics(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
VLSI Thermal Placement Optimization Using Simulated Annealing Wang Nailong,Dai Hongyu and Zhou RundeProject supported by National Natural Science Foundation of China (No.59995550 1) Wang Nailong male,was born in 1977,PhD candidate.His research interests are low power CMOS circuit design and electrothermal simulation. Dai Hongyu male,was born in 1975,PhD candidate.His research interests are low power CMOS circuit design and embedded system design. Zhou Runde male,was born in 1945,professor and advisor for PhD candidates.His research interests are low power IC design and embedded system structure. Received 1 June 2002,revised manuscript received 4 November 2002○c 2003 The Chinese Institute of Electronics(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Technology of Two Steps CMP in ULSI Multilevel Wang Hongying 1,Liu Yuling 2,Hao Jingchen 1 and Wei Bihua 1Project supported by Natural Science Foundation of Tianjin(No.013605911) Received 13 May 2002,revised manuscript received 10 September 2002○c 2003 The Chinese Institute of Electronics(1 The 13th Electronic Research Institute,Shijiazhuang 050051,China) (2 Hebei University of Technology,Tianjin 300130,China)
Legitimate Skew Driven Clock Tree Routing and Optimization Zhao Meng,Cai Yici,Hong Xianlong and Liu YiProject supported by State Key Development for Basic Research of China(No.1998030403) and National Natural Science Foundation of China(No.60176006) Zhao Meng graduate student.She is engaged in the research on clock routing algorithm of VLSI. Cai YiCi associate professor.She is engaged in the research and teaching of computer design automation. Received 24 May 2002,revised manuscript received 5 December 2002○c 2003 The Chinese Institute of Electronics(Department of Computer Science and Technology,Tsinghua University,Beijing 100084,China)
Polishing of Super-Low Sub-Surface Damage of GaAs Wafer Bu Junpeng,Zheng Hongjun,Zhao Ji,Zhu Ronghui and Yin YuhuaReceived 16 April 2002,revised manuscript received 24 June 2002○c 2003 The Chinese Institute of Electronics(Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083)
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