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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2003 -01
Catalog
ZnO Films Synthesized by Solid-Source Chemical Vapor Deposition with c-Axis Parallel to Substrate Lü Jianguo,Ye Zhizhen,Zhang Yinzhu,Huang Jingyun and Zhao Binghui(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Optimization Design of Active Structure of Strained MQW DFB Lasers Zhang Yejin 1,Zhu Lin 1,Gao Zhiguo 1,Chen Minghua 1,Dong Yi 1, Chen Weiyou 2,Liu Shiyong 2 and Xie Shizhong 1(1 Department of Electronics Engineering,Tsinghua University,Beijing 100084,China) (2 Department of Electronics Engineering,Jilin University,Changchun 130023,China)
Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μm Polarization Independent Semiconductor Optical Amplifier Qiu Weibin 1,He Guomin 2,Dong Jie 1 and Wang Wei 1(1 National Research Center for Optoelectronic Technology,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China) (2 Department of Physics,Xiamen University,Xiamen 361005,China)
Energy Dependence of Interface Trap Density——Investigated by Relaxation Spectral Technique Huo Zongliang,Mao Lingfeng,Tan Changhua and Xu MingZhen(Institute of Microelectronics,Peking University,Beijing 100871,China)
Nano-Level Electron Beam Lithography Liu Ming,Chen Baoqin,Wang Yunxiang and Zhang Jianhong(Microelectronics R&D Center,The Chinese Academy of Sciences,Beijing 100029,China)
Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO_2 Films Shi Jianjun,Wu Liangcai,Bao Yun,Liu Jiayu,Ma Zhongyuan,Dai Min, Huang Xinfan,Li Wei,Xu Jun and Chen Kunji(National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093,China)
Investigation on Persistent Photoconductivity Effect in Cubic GaN Zhang Zehong,Zhao Degang,Sun Yuanping,Feng Zhihong,Shen Xiaoming, Zhang Baoshun,Feng Gan,Zheng Xinhe and Yang Hui(National Research Center for Optoelectronic Technology,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China)
Growth and Property of Surface Stress Induced InGaN Quantum Dots Li Yufeng,Han Peide,Chen Zhen,Li Dabing and Wang Zhanguo(Key Laboratory of Semiconductor Materials Science,Institue of Semiconductors, The Chinese Academy of Sciences,Beijing 100083,China)
Investigation on Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of ZnS Thin Films Zhang Xitian 1,2 ,Liu Yichun 2,Zhi Zhuangzhi 2,Zhang Jiying 2,Shen Dezhen 2, Xu Wu 2,Zhong Gouzhu 2 and Fan Xiwu 2(1 Department of Physics,Harbin Normal University,Harbin 150080,China) (2 Open Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics, The Chinese Academy of Sciences,Changchun 130021,China)
Effects of Nitrogen on Grown-in Oxygen Precipitates in Large Diameter Czochralski Silicon Yu Xuegong,Yang Deren,Yang Jiansong,Ma Xiangyang,Li Liben and Que Duanlin(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Minority Carrier Lifetime of Thermal Oxide Passivated CZ Si Wafers Cui Can,Yang Deren,Yu Xuegong,Ma Xiangyang,Li Liben and Que Duanlin(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Synthesis and Characteristics of ZnSe One-Dimension Nanocrystals Li Huanyong 1,2 and Jie Wanqi 1(1 State Key Laboratory of Solidification Processing,Northwest Polytechnical University,Xi'an 710072,China) (2 Department of Chemistry,Northwest University,Xi'an 710069,China)
Epitaxial Growth of CoSi_2 by Co/C/Si Solid Phase Epitaxy Qu Xinping 1,Xu Beilei 1,Ru Guoping 1,Li Bingzong 1,W.Y.Cheung 2, S.P.Wong 2 and Paul K.Chu 3(1 State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433,China) (2 Department of Electronic Engineering,Chinese University of Hong Kong,Hong Kong,China) (3 Department of Physics and Material Science,City University of Hong Kong,Hong Kong,China)
Room Temperature Luminescent Properties of Si-Based Fabry-Perot Microcavity Wang Yan,Dan Yaping,Yue Ruifeng and Liu Litian(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Measurement of Chirp Parameter of Intensity Modulator by Fiber Frequency Response Method Wang Anbin,Wu Jian,Zhang Fan and Lin Jintong(Optical Communication Center,Beijing University of Post and Telecommunication,Beijing 100876,China)
Effects of Nitrogen Implantation into Gate Electrode on Characteristics of Ultra-Thin Gate Oxide Xu Xiaoyan,Tan Jingrong,Huang Ru and Zhang Xing(Institute of Microelectronics,Peking University,Beijing 100871,China)
Design of 1V,2.5GHz Voltage Controlled Oscillator Li Tianwang,Zeng Xiaojun and Hong Zhiliang(Department of Electronic Engineering,Fudan University,Shanghai 200433,China)
Implementation of New Phase-Switching Technique and Its Applications to GHz Dual-Modulus Prescalers Chi Baoyong and Shi Bingxue(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Die Cracking of Flip-Chip with No-Flow Underfill Cai Xia,Huang Weidong,Xu Bulu and Cheng Zhaonian(Daimler Chrysler SIM Laboratory,Shanghai Institute of Microsystem and Information Technology, The Chinese Academy of Sciences,Shanghai 200050,China)
A Register-Oriented Modeling and Verification Method for Pipeline Microprocessor He Hu and Sun Yihe(Institute of Microelectronics,Tsinghua University,Bejing 100084,China)
Fully Depleted CMOS/SOI Technology Liu Xinyu 1,Sun Haifeng 1,Liu Hongmin 1,Chen Huanzhang 1,Hu Huanzhang 1,Hai Chaohe 1, He Zhijing 2 and Wu Dexin 1(1 Research and Development Center of Microelectronics,The Chinese Academy of Sciences,Bijing 100029,China) (2 Institute of Semiconductors,The Chinese Academy of Sciences,Bijing 100083,China)
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