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FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
2004 -01
A Novel Matched Filter Structure with Neuron MOS Devices Yang Yuan,Yu Ningmei and Gao Yong(Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China)
A 71mW 8b 125MSample/s A/D Converter Wang Zhaogang,Chen Cheng,Ren Junyan and Xu Jun(ASIC and System State Key Laboratory,Fudan University,Shanghai 200433,China)
A 5mW 1.8V Low Over-Sampling Ratio ΣΔ Modulator with 81dB Dynamic Range Xu Donglin,Zhao Hui,Wang Zhaogang,Ren Junyan and Min Hao(ASIC & System State Key Laboratory,Department of Microelectronics,Fudan University,Shanghai 200433,China)
A Microwave High Power Static Induction Transistor with Double Dielectrics Gate Structure Wang Yongshun,Li Siyuan and Hu Dongqing(Institute of Static Induction Device,School of Physical Science and Technology, Lanzhou University,Lanzhou 730000,China)
A New Method for Fabrication of SU8 Structures with a High Aspect Ratio Using a Mask-Back Exposure Technique Yi Futing 1,Miao Peng 2,Peng Liangqiang 1,Zhang Jufang 1 and Han Yong 1(1 Institute of High Energy Physics,The Chinese Academy of Sciences,Beijing 100039,China) (2 Imperial Collage London,London SW7 2BT,UK)
New Incremental Placement Algorithm Based on Integer Programming for Reducing Congestion Li Zhuoyuan,Wu Weimin and Hong Xianlong(Department of Computer Science and Technology,Tsinghua University,Beijing 100084,China)
Characteristics of Electron Tunneling Based on Two-Coupled Quantum Dot System Xiao Jie,Shi Yi,Xiong Shijie,Zhang Rong and Zheng Youdou(Department of Physics & National Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093,China)
Effect of Annealing on Modulus of Rupture of GaAs Window Crystals Li Jianming,Tu Hailing and Zheng Ansheng(National Engineering Research Center for Semiconductor Materials,General Research Institute for Non-Ferrous Metals,Beijing 100088,China)
Raman and Infrared Spectra Study of GaN_( 1-x)P_x Ternary Alloys Grown by MOCVD Zhang Kaixiao 1,Shen Bo 1,Chen Dunjun 1,Zhang Rong 1,Shi Yi 1,Zheng Youdou 1, Li Zhifeng 2 and Lu Wei 2(1 Department of Physics,Nanjing University,Nanjing 210093,China) (2 Infrared Physics Laboratory of Nation,Shanghai Institute of Technology Physics, The Chinese Academy of Sciences,Shanghai 200083,China)
Characterization of ZnO Thin Film Preparation by Sol-Gel Spinning-Coating Ji Zhenguo,Song Yongliang,Yang Chengxing,Liu Kun,Wang Chao and Ye Zhizhen(State Key Laboratory for Silicon Materials,Zhenjiang University,Hangzhou 310027,China)
Preparation and Properties of Conducting Transparent ZnO-SnO_2 Films Deposited at Room Temperature Huang Shulai 1,Ma Jin 1,Liu Xiaomei 2,Ma Honglei 1,Sun Zheng 1 and Zhang Deheng 1(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 School of Computer,Shandong University,Ji'nan 250100,China)
Flow Pattern Defects in Czochralski Silicon Crystals Liu Caichi 1,Qiao Zhi 1,Zhou Qigang 2,Wang Jing 2,Hao Qiuyan 1,Zhang Jianfeng 1, Li Yangxian 1 and Ren Bingyan 1(1 Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China) (2 General Research Institute for Nonferrous Metals,Beijing 100088,China)
Growth of c-Axis Oriented Si-Based ZnO Films Using Al as Transitional Films and Fabrication of Its Schottky Diodes Li Bei,Ye Zhizhen,Huang Jingyun,Yuan Guodong,Zhang Haiyan and Zhao Binghui(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Undoped AlGaN/GaN Microwave Power HEMT Chen Tangsheng,Jiao Gang,Xue Fangshi,Cao Chunhai and Li Fuxiao(Nanjing Electronic Devices Institute,Nanjing 210016,China)
A SiCOI MESFET with Multi-Step Dielectric Groove Isolation Gong Xin,Zhang Jincheng and Hao Yue(Institute of Microelectronics,Xidian University,Xi'an 710071,China)
Device Degradation and Reliability Characterization in GaAs PHEMT's Liu Hongxia 1,Zheng Xuefeng 1,Hao Yue 1,Han Xiaoliang 1,Li Peixian 1 and Zhang Mian 2(1 Microelectronics Institute,Xidian University,Xi'an 710071,China) (2 The 13th Research Institute,China Electronic Technology Group Corporation,Shijiazhuang 050002,China)
Modeling and Simulation of a Test Structure for Measuring Vertical Fracture Strength of MEMS Film Mei Niansong and Huang Qing'an(Key Laboratory of MEMS of Education Ministry,Southeast University,Nanjing 210096,China)
Local Field of Surface and Redistribution Properties of Secondary Electrons Emitted from Insulating Thin Film with Negative Charge Feng Renjian 1,Zhang Haibo 1,Wang Shunyong 1 and Katsumi URA 2(1 Department of Electronic Science and Technology,Xi'an Jiaotong University,Xi'an 710049,China) (2 Osaka University,Osaka,Japan)
New Switching Sequence for Gradient Error Compensation in Thermometer-Decoded DAC Arrays Wang Xiaofeng,Yang Ke,Ling Xieting and Hu Bo(Department of Electronic Engineering,Fudan University,Shanghai 200433,China)
Fabrication Technique of Bulk-Silicon Micro-Optical Switch in (110) Silicon Zhang Long,Dong Wei,Zhang Xindong,Liu Caixia,Chen Weiyou and Xu Baokun(Jilin University Region,State Key Laboratory on Integrated Opto-Electronics,Changchun 130023,China)
Research and Analysis of Gallium Mixture's R_s Effect Sun Ying 1,Liu Zhijun 2 and Liu Xiuxi 1(Shandong Normal University,Ji'nan 250014,China) (Shandong University,Ji'nan 250011,China)
A Kind of New Technique of Mixing Gas(Ga)-Solid (Mixed Oxidation Product of Al)-Solid(Si) Liu Xiuxi,Sun Ying and Li Yuguo(Institute of Semiconductors,Shandong Normal University,Ji'nan 250014,China)
Chemic-Mechanical Polishing of Silicon Wafer in ULSI Zhang Kailiang 1,Liu Yuling 1,Wang Fang 2,Li Zhiguo 1 and Han Danghui 1(1 Institute of Microelectronic Technology &Materials,Hebei University of Technology,Tianjin 300130,China) (2 Department of Photoelectronics,Tianjin University of Technology,Tianjin 300191,China)
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