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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2005 -01
Catalog
Design and Realization of Resonant Tunneling Diodes with New Material Structure Wang Jianlin 1,Wang Liangchen 2,Zeng Yiping 3,Liu Zhongli 1,Yang Fuhua 4,and Bai Yunxia 2(1 Microelectronics R&D Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(2 Optoelectronic R&D Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(3 Novel Material Department,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(4 State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
W/TiN Gate Thin-Film Fully-Depleted SOI CMOS Devices Lian Jun and Hai Chaohe(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Ultra-Wideband Electromagnetic Radiation from GaAs Photoconductive Switches Shi Wei,Jia Wanli,and Ji Weili(Department of Applied Physics,Xi’an University of Technology,Xi’an 710048,China)
Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill Zhu Yong,Yan Guizhen,Wang Chengwei,Yang Zhenchuan,Fan Jie,Zhou Jian,and Wang Yangyuan(National Key Laboratory of Nano/Micro Fabrication Technology,Institute of Microelectronics,Peking University,Beijing 100871,China)
A New Clustering-Based Partitioning Method for VLSI Mixed-Mode Placement Lü Yongqiang,Hong Xianlong,Yang Changqi,Zhou Qiang,and Cai Yici(Deptartment of Computer Science and Technology,Tsinghua University,Beijing 100084,China)
Thin-Film Accumulation-Mode SOI pMOSFET Lian Jun,Hai Chaohe,and Cheng Chao(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Optical Characterization of Hydrogenated Amorphous Silicon Carbide Films from Transmission Spectra Hu Zhihua 1,2 and Liao 1 Xianbo(1 State Key Laboratory for Surface Physics,Center for Condensed Mater Physics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(2 Institue of Solar Energy,Yunnan Normal University,Kunming 650092,China)
MOCVD Growth of p-Type ZnO Thin Films by Using NO as Dopant Source Xu Weizhong,Ye Zhizhen,Zhou Ting,Zhao Binghui,Zhu Liping,and Huang Jingyun(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Deposition and Characterization of AlN Thin Films on Silicon Yu Yi,Ren Tianling,and Liu Litian(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
Microstructure and Properties of CdS Polycrystalline Thin Films for Solar Cells Li Wei,Feng Lianghuan,Cai Yaping,Zhang Jingquan,Zheng Jiagui,Cai Wei,Li Bing,Wu Lili,and Lei Zhi(College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)
Optical and Electronic Properties of Composite of Porous Silicon and Poly(9-Vinylcarbazole) Zhou Chengyao 1,Li Dongsheng 1,Zhang Niansheng 2,and Yang Deren 1(1 State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)(2 Physics Department,Zhejiang University,Hangzhou 310027,China)
Electrical and Structural Properties of Mo/W/Ti/AuOhmic Contacts to n-GaAs Liu Wenchao,Xia Guanqun,Li Binghan,Huang Wenkui,and Liu Yanxiang(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)
Mosaic Structure and Heating Treatment of Passivated HgCdTe Sun Tao,Wang Qingxue,Chen Wenqiao,Liang Jinsui,Chen Xingguo,Hu Xiaoning,and Li Yanjin(Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
Fractal Phenomenon During Fabricating Ultrthin Silicon Membrane Using Etching-Stop Yang Daohong,Xu Chen,Dong Dianhong,Zhang Jianming,Yang Qiming,Jin Wenxian,and Shen Guangdi(Beijing Optoelectronic Technology Laboratory,College of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China)
Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
Influence of Hole Buffer Layer CuPc on Properties of Organic Light-Emitting Devices Zheng Daishun 1,Zhang Xu 2,and Qian Keyuan 1(1 Graduate School at Shenzhen,Tsinghua University,Shenzhen 518055,China)(2 School of Mathematics and Informations,Gansu United University,Lanzhou 730000,China)
NBTI Effects of p~+ Gate pMOSFET and Influence of Nitrogen on NBTI Effects Han Xiaoliang,Hao Yue,and Liu Hongxia(Microelectronics Institute,Xidian University,Xi’an 710071,China)
Development of High Performance 1mm Gate Width AlGaN/GaN Power HEMTs Shao Gang 1,Liu Xinyu 1,He Zhijing 1,Liu Jian 1,Wei Ke 1,Chen Xiaojuan 1,Wu Dexin 1,Wang Xiaoliang 2,and Chen Hong 3(1 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)(2 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(3 Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China)
High Power-Added-Efficiency InGaP/GaAs Power HBT Zheng Liping,Yuan Zhipeng,Fan Yuwei,Sun Haifeng,Di Haocheng,Wang Suqin,Liu Xinyu,and Wu Dexin(Institute of Microelectronics,Chinese Academy of Sciences,Beijng 100029,China)
Numerical Analysis of A Novel Microwave Power SiGe HBT Liu Liang 1,WangYuqi 2,Xiao Bo 1,Kang Baowei 1,Wu Yu 1,and Wang Zhe 1(1 College of Electronic Science & Technology,Beijing University of Technology,Beijing 100022,China)(2 Physics Department,Hong Kong University of Sicence and Technology,Hong Kong,China)
Self-Aligned SiGe HBT Based on Dry-Wet Etching Liu Daoguang 1,2,3,Hao Yue 1,Xu Shiliu 2,3,Li Kaicheng 2,3,Li Peixian 1,Zhang Xiaoju 1,Zhang Jinfeng 1,Zheng Xuefeng 1,Zhang Jing 2,3,Liu Rongkan 2,3,and Liu Luncai 2,3(1 Microelectronics Institute,Xidian University,Xi’an 710071,China)(2 Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corporation,Chongqing 400060,China)(3 National Laboratory of Analog Integrated Circuits,Chongqing 400060,China)
Key Processes for Fabrication of Self-Aligned InGaP/GaAs HBT Device and Circuit Shi Ruiying 1,Sun Haifen 2,Liu Xunchun 2,and Liu Hongmin 2(1 Department of Physics,Sichuan University,Chengdu 610064,China)(2 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Effect of Burn-in on Irradiation Reliablity of Fluorinated nMOSFET Cui Shuai,Yu Xuefeng,Ren Diyuan,Zhang Hualin,and Arikin(Xinjiang Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China)
Ultra-Thin Si_3N_4/SiO_2(N/O) Stack Gate Dielectrics and Devices Lin Gang and Xu Qiuxia(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
AC Performance Analysis and Structure Optimization of Ultra-Thin Body SOI MOSFET’s Tian Yu and Huang Ru(Institute of Microelectronics,Peking University,Beijing 100871,China)
Theory Analysis of t_( rr)-T Characteristic of Fast Recover Diode with MLD Structure Pan Feixi and Chen Xingbi(School of Microelectronics and Solid-State Electronics,University of Electronic Scienceand Technology of China,Chengdu 610054,China)
Polarization Dispersion Analysis for Etched Diffraction Grating Demultiplexer Pang Dongqing,Song Jun,and He Sailing(State Key Laboratory for Modern Optical Instrumentation,Center for Optical and Electromagnetic Research,Zhejiang University,Hangzhou 310027,China)
Process of Etched-Grating Demultiplexer Based on Silicon-on-Insulator Wang Wenhui 1,Tang Yanzhe 2,Ge Xiaohong 1,Wu Yaming 1,Yang Jianyi 1,2,and Wang Yuelin 1,2(1 State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)(2 Department of Information and Electronic Engineering,Zhejiang University,Hangzhou 310027,China)
Dark Current Mechanism of HgCdTe Photovoltaic Detector Passivated by Different Structure Sun Tao,Chen Wenqiao,Liang Jinsui,Chen Xingguo,Hu Xiaoning,and Li Yanjin(Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
Design and Noise Analysis of A Micromachined Gyroscope Working at Atmospheric Pressure Chen Yong 1,Jiao Jiwei 1,Wang Huiquan 2,Jin Zhonghe 2,Zhang Ying 1,Xiong Bin 1,Li Xinxin 1,and Wang Yuelin 1(1 State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)(2 Department of Information and Electronics,Zhejiang University,Hangzhou 310027,China)
Image Rejection for Bluetooth Receiver Cui Fuliang,Ma Dequn,Huang Lin,and Hong Zhiliang(IC Design Laboratory,Fudan University,Shanghai 200433,China)
Analysis of Bulk-Driven MOSFET and Design of Ultra-Low Voltage Operational Amplifier Yin Tao,Zhu Zhangming,Yang Yintang,and Guo Lei(Microelectronics Institute,Xidian University,Xi’an 710071,China)
A New Binary Decision Diagram Device and Circuit Lu Jiang 1,2,Wu Nanjian 1,Liu Su 2,and Kuang Xiaofei 1(1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)(2 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)
A New Memory Array Structure Decreasing Disturb Between Memory Cells Feng Guochen,Zheng Xinjian,and Shen Xubang(Xi’an Microelectronics Technology Institute,Xi’an 710054,China)
A Novel High-Speed Lower-Jitter Lower-Power-Dissipation Dual-Modulus-Prescaler and Applications in PLL Frequency Synthesizer Xu Yong 1,2,Wang Zhigong 1,Li Zhiqun 1,and Xiong Mingzhen 1(1 Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China)(2 College of Sciences,PLA University of Science and Technology,Nanjing 211101,China)
CMOS Serial Transceiver with Half-Rate Architecture Huang Lin,Guo Gan,Ye Jinghua,Chen Yihui,and Hong Zhiliang(Department of Microelectronics,Fudan University,Shanghai 200433,China)
Design of 11GHz CMOS Ring VCO Wang Xueyan,Zhu En,Xiong Mingzhen,and Wang Zhigong(Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China)
Thermal Analysis of Silicon Micromachining Based Micro Hotplates Yu Jun 1,Tang Zhen’an 1,Philip C.H.Chan 2,Wei Guangfen 1,Wang Liding 1,and Yan Guizhen 3(1 Deptartment of Electrical Engineering,Dalian University of Technology,Dalian 116024,China)(2 Deptartment of Electrical & Electronic Engineering,Hong Kong University of Science & Technology,Hong Kong,China)(3 Institute of Microelectronics,Peking University,Beijing 100871,China)
Study on Al_(0.98)Ga_(0.02)As Wet Oxidation Dong Limin,Guo Xia,Qu Hongwei,Du Jinyu,Zou Deshu,Lian Peng,Deng Jun,Xu Zuntu,and Shen Guangdi(Institute of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory,Beijing 100022,China)
Hierarchical Extraction of Global Capacitance Matrix for 3D VLSI Interconnects Yu Wenjian,Lu Taotao,Wang Zeyi,and Hong Xianlong(Department of Computer Science and Technology,Tsinghua University,Beijing 100084,China)
Damage of Bonding Force on IC Aluminum Pad in COF Structure Peng Yaowei 1,Chan Justy 2,Wang Zhiping 2,and Xiao Fei 1(1 Department of Material Science,Fudan University,Shanghai 200433,China)(2 China Technology Center,Philips Mobile Display Systems,Shanghai 200131,China)
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