Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
Full-Text Search:
半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
半导体学报(英文版)
2006 -09
Catalog
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC Wang Xiaoliang 1, ,Hu Guoxin1,Ma Zhiyong1,Xiao Hongling1,Wang Cuimei1,Luo Weijun1, Liu Xinyu2,Chen Xiaojuan2,Li Jianping1,Li Jinmin1,Qian He2,and Wang Zhanguo1(1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (2 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Study on the Characteristics of SOI DTMOS with Reverse Schottky Barriers Bi Jinshun and Hai Chaohe(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Automatic IQ Phase Calibration Design in a 2.4GHz Direct Conversion Receiver Liu Ruifeng,Li Yongming,Chen Hongyi,and Wang Zhihua(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO_3 Yun Jiangni 1, ,Zhang Zhiyong1,Deng Zhouhu1,and Zhang Fuchun 1,2 (1 Institute of Information Science and Technology,Northwest University,Xi’an 710069,China) (2 College of Physics & Electronic Information,Yan’an University,Yan’an 716000,China)
A 2GHz Low Power Differentially Tuned CMOS Monolithic LC-VCO Zhang Li 1, ,Chi Baoyong1,Yao Jinke2,Wang Zhihua1,and Chen Hongyi1(1 Institute of Microelectronics,Tsinghua University,Beijing 100084,China) (2 Department of Electronic Engineering,Tsinghua University,Beijing 100084,China)
Design,Analysis,and Optimization of a CMOS Active Pixel Sensor Xu Jiangtao,Yao Suying,Li Binqiao,Shi Zaifeng,and Gao Jing(School of Electronics and Information Engineering,Tianjin University,Tianjin 300072,China)
A New Structure for a CMOS Audio Power AMP with Extremely Low THD and Low Power Consumption Cao Zhengxin and Xiong Shaozhen(Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology, Institute of Photo-Electronics,Nankai University,Tianjin 300071,China)
A Radial Stub Test Circuit for Microwave Power Devices Luo Weijun 1,2 ,Chen Xiaojuan2,Liang Xiaoxin2,Ma Xiaolin2, Liu Xinyu 2, ,and Wang Xiaoliang1 (1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (2 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
A New AC Driving Method for a Current-Programmed AM-OLED Pixel Circuit Si Yujuan 1, ,Xu Yanlei 1,3 ,Lang Liuqi4,Chen Xinfa1,and Liu Shiyong2(1 Institute of Communication Engineering,Jilin University,Changchun 130025,China) (2 National Laboratory of Integrated Optoelectronics,Jilin University,Changchun 130023,China) (3 Institute of Information and Technology,Jilin Agriculture University,Changchun 130118,China) (4 College of Zhuhai,Jilin University,Zhuhai 519041,China)
A General Method in the Synthesis of Ternary Double Pass-Transistor Circuits Hang Guoqiang(Department of Information & Electronic Engineering,Zhejiang University,Hangzhou 310027,China)
A Passive Low-Pass Filter on Low-Loss Substrate Fang Jie1,Liu Zewen 1, ,Zhao Jiahao2,Chen Zhongmin1,Wei Jia1,Liu Litian1,and Li Zhijian1(1 Institute of Microelectronics,Tsinghua University,Beijing 100084,China) (2 Department of Material Science and Engineering,Tsinghua University,Beijing 100084,China)
Preparation of AlSb Polycrystalline Thin Films by Co-Evaporation Yao Feifei,Lei Zhi,Feng Lianghuan,Zhang Jingquan,Li Wei,Wu Lili, Cai Wei,Cai Yaping,Zheng Jiagui,and Li Bing(Department of Materials Science,Sichuan University,Chengdu 610064,China)
Current Oscillation Properties of Manganese-Doped-Silicon Materials Chen Zhaoyang 1, ,Ba Weizhen1,Zhang Jian1,Cong Xiuyun1, Bakhadyrkhanov M K2,and Zikrillaev N F2(1 Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China) (2 Tashkent State Technical University,Tashkent 700095,Uzbekistan)
Preparation of Si/SiO_2 Optical Thin Film by Double Source Electron Beam Evaporation Technology Zhao Miao,Zhou Daibing,Tan Manqing,Wang Xiaodong,and Wu Xuming(Optoelectronics R&D Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Photosensitive Barium Strontium Titanate Gel Films and Their Fine-Patterning Zhang Weihua 1, ,Zhao Gaoyang1,Li Ying1,and Zhao Wei2(1 School of Materials Science & Engineering,Xi’an University of Technology,Xi’an 710048,China) (2 Xi’an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi’an 710068,China)
Excessive Thermotaxis Effect of Low Current in pn Junction and Theoretical Analog Calculation Miao Qinghai,Zhu Yangjun,Zhang Xinghua,and Lu Shuojin(School of Physics and Microelectronics,Shandong University,Ji’nan 250100,China)
Characteristics of npn AlGaN/GaN HBT Gong Xin 1, ,Ma Lin2,Zhang Xiaoju1,Zhang Jinfeng1,Yang Yan1,and Hao Yue1(1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China) (2 School of Technical Physics,Xidian University,Xi’an 710071,China)
Fabrication of a New-Layout InGaP/GaAs HBT Yang Wei,Liu Xunchun,Zhu Min,Wang Runmei,and Shen Huajun(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Total Dose Gamma Irradiation Effects and Annealing Characteristics of a SiGe HBT Niu Zhenhong 1,2, ,Guo Qi1,Ren Diyuan1,Liu Gang 1,2 ,and Gao Song 1,2 (1 Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China) (2 Graduate School of the Chinese Academy of Sciences,Beijing 100039,China)
C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with >40% Power-Added Efficiency Shen Huajun,Chen Yanhu,Yan Beiping,Ge Ji,Wang Xiantai,Liu Xinyu,and Wu Dexin(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
An Accurate Arithmetic for On-Chip Spiral Inductors with Gradually Changed Metal Width and Space Luo Tianxing 1,2 ,Shi Yanling 1,2, ,Ding Yanfang1,Tang Shenqun1,Liu Yun1, Wang Yong1,Zhu Jun3,Chen Shoumian3,and Zhao Yuhang3(1 Department of Electron,East China Normal University,Shanghai 200062,China) (2 State Key Laboratory of Transducer Technology,China Academy of Sciences,Shanghai 200050,China) (3 Shanghai IC Research and Development Center,Shanghai 201203,China)
780nm InGaAsP/InGaP/AlGaAs High Power Semiconductor Laser Cao Yulian 1, ,Lian Peng2,Wang Qing1,Wu Xuming1,He Guorong1, Cao Qing1,Song Guofeng1,and Chen Lianghui1(1 Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (2 Department of Electronic Engineering,Beijing University of Technology,Beijing 100022,China)
Effects of a Microcavity on Harmonic and Intermodulation Distortions of a Vertical Cavity Surface Emitting Laser Zhang Bo 1, ,Lü Yinghua1,and Zhang Jinling2(1 Institute of Telecommunication Networks and Technology,Beijing University of Posts and Telecommunications,Beijing 100876,China) (2 School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China)
Accurate Characterization for the Frequency Response of High-Speed Photodetectors Wen Jimin,San Haisheng,Huang Hengpei,Xie Liang,Zhu Ninghua, Zhao Lingjuan,and Wang Wei (State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)
Damage Removal in GaN-LEDs by Two-Step Etching Technology Song Yingping,Guo Xia,Ai Weiwei,Zhou Yueping,and Shen Guangdi(Beijing Optoelectronic Laboratory,Beijing University of Technology,Beijing 100022,China)
Fabrication of a High Quality Etching Mask for Two-Dimensional Photonic Crystal Structures Du Wei 1, ,Xu Xingsheng1,Han Weihua2,Wang Chunxia1,Zhang Yang2, Yang Fuhua2,and Chen Hongda1(1 Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (2 Research Center of Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)
Silicon Nanowires Fabricated by MEMS Technology and Their Electronic Performance Liu Wenping 1,2, ,Li Tie1,Yang Heng1,Jiao Jiwei1,Li Xinxin1,and Wang Yuelin1(1 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China) (2 Graduate School of the Chinese Academy of Sciences,Beijing 100039,China)
A Test System for the in situ Extraction of the Material Parameters of MEMS Thin Films Huang Qing’an,Liu Zutao,Li Weihua,and Li Qiaoping(Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China)
A 30nA Temperature-Independent CMOS Current Reference and Its Application in an LDO Wang Yi,He Le’nian,and Yan Xiaolang(Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China)
Study on the Automatic Compensation of a Sagnac Loop Filter Liu Lihui 1, ,Chen Shaohua2,Zhao Qida3,Liu Yuliang1,and Li Fang1(1 State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China) (2 China University of Petroleum,Beijing 102249,China) (3 Institute of Modern Optics,Nankai University,Tianjin 300071,China)
A Highly Linear CMOS IF Variable Gain Amplifier with Exponential Gain Control Yun Tinghua,Tang Shoulong,and Shi Longxing(National Engineering Research Center for Application-Specific Integrated Circuit Systems, Southeast University,Nanjing 210096,China)
Application of Two Thermal Actuators in Miniature Electric Field Sensors Ye Chao 1,2 ,Chen Xianxiang 1,2 ,Peng Chunrong 1,2 ,Tao Hu 1,2 ,and Xia Shanhong 1, (1 State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China) (2 Graduate University of Chinese Academy of Sciences,Beijing 100039,China)
Temperature Sensors Based on CMOS Sub-Threshold Characteristic Zhang Xun,Wang Peng,and Jin Dongming(Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
2.5Gb/s Mixed-Integrated Optical Transmitters Feng Jun 1, ,Shi Wei2,Miao Yu1,Li Lianming1,Zhang Jun2,Wang Zhigong1,and Jiang Shan2(1 Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,China) (2 Accelink Technologies Co,Ltd,Wuhan 430074,China)
Research on a Measurement Circuit for UDSM CMOS Process Parameter Variation Yang Yuan,Gao Yong,and Yu Ningmei(Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China)
Suppressing of On-Chip Inductor Current Crowding by a Multi-Current-Path Method Liu Ke,Jian Hongyan,Huang Chenling,Tang Zhangwen,and Min Hao(State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China)
Thermal Fatigue Life Time Prediction of Sn-3.5Ag Lead-Free Solder Joint for Chip Scale Package Han Xiao,Ding Han,Sheng Xinjun,and Zhang Bo(Advanced Electronic Manufacturing Center,School of Mechanical Engineering, Shanghai Jiao Tong University,Shanghai 200030,China)
2006 Issues:  [01] [02] [03] [04] [05] [06] [07] [08] [09] [10] [11] [12]
More Issues:   [1983]   [1988]   [1989]   [1990]   [1991]   [1992]   [2000]   [2001]   [2002]   [2003]   [2004]   [2005]   [2007]   [2008]   [2009]   [2010]   [2011]   [2012]   [2013]   [2014]   [2015]   [2016]   [2017]   [2019]
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved