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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2006 -01
Catalog
Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate Yang Hua,Zhu Hongliang,Xie Hongyun,Zhao Lingjuan,Zhou Fan,and Wang Wei(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Study and Fabrication of a Au/n-ZnO/p-Si Structure UV-Enhanced Phototransistor Guo Junfu,Xie Jiachun,Duan Li,He Guanghong,Lin Bixia,and Fu Zhuxi(Department of Physics,University of Science and Technology of China,Hefei 230026,China)
Design and Fabrication of Power Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications Xue Chunlai ,Cheng Buwen,Yao Fei,and Wang Qiming(State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)
An Ultra Wideband VHF CMOS LC VCO Ning Yanqing ,Wang Zhihua,and Chen Hongyi (Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
12Gb/s 0.25μm CMOS Low-Power 1∶4 Demultiplexer Ding Jingfeng,Wang Zhigong,Zhu En,Zhang Li,and Wang Gui(Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,China)
A Novel Algorithm to Extract Weighted Critical Area Wang Junping,Hao Yue,Zhang Huining,Zhang Xiaoju,and Ren Chunli (Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China)
Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices Li Hongjian 1,3, ,Yan Lingling1,Huang Baiyun2,Yi Danqing2, Hu Jin3,He Yingxuan3,and Peng Jingcui3(1 College of Physics Science and Technology,Central South University,Changsha 410083,China) (2 College of Materials Science and Engineering,Central South University,Changsha 410083,China) (3 Department of Applied Physics,Hunan University,Changsha 410082,China)
Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET Bi Jinshun,Wu Junfeng,and Hai Chaohe(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Analysis and Design of a ΔΣ Modulator for Fractional-N Frequency Synthesis Zhang Weichao,Xu Jun,Zheng Zengyu,and Ren Junyan(State Key Laboratory of ASIC & System,Department of Microelectronics,Fudan University,Shanghai 200433,China)
A 12-Channel,30Gb/s,0.18μm CMOS Front-End Amplifier for Parallel Optic-Fiber Receivers Li Zhiqun ,Xue Zhaofeng,Wang Zhigong,and Feng Jun(Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,China)
Elmore Delay Estimation of Two Adjacent Coupling Interconnects Dong Gang,Yang Yintang,and Li Yuejin(Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China)
Calculation of Microband Breadth of GaAs/AlGaAs Superlattice He Lijun 1, ,Cheng Xingkui1,Li Hua1,Zhang Jian1,Zhou Junming2,and Huang Qi2(1 Institute of Physics and Microelectronics,Shandong University,Ji’nan 250100,China) (2 Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China)
Screening Influence on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure Wen Shumin 1,2 and Ban Shiliang 1, (1 Department of Physics,College of Sciences and Technology,Inner Mongolia University,Hohhot 010021,China) (2 Jining Teachers College,Wulanchabu 012000,China)
Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer Feng Quanlin 1,2, ,Shi Xunda2,Liu Bin2,Liu Zuoxing2, Wang Jing1,and Zhou Qigang 1,2 (1 General Research Institute for Non-Ferrous Metals,Beijing 100088,China) (2 GRINM Semiconductor Materials Co.Ltd,Beijing 100088,China)
Effect of Pre-Rapid Thermal Annealing on FPDs and Denuded Zones in Large-Diameter CZ-Si Zhang Jianqiang1,Liu Caichi 1, ,Zhou Qigang2,Wang Jing2,Hao Qiuyan1, Sun Shilong1,Zhao Liwei1,and Teng Xiaoyun1(1 Institute of Information and Function Materials,Hebei University of Technology,Tianjin 300130,China) (2 General Research Institute for Nonferrous Metals,Beijing 100088,China)
Effect of H_2 on Low Temperature Selective Growth of Si_(1-x)Ge_x by UHV/CVD Zhao Xing1,Ye Zhizhen 1, ,Wu Guibin1,Liu Guojun1,Zhao Binghui1,and Tang Jiuyao2(1 State Key Laboratory of Silicon Material,Zhejiang University,Hangzhou 310027,China) (2 Center of Optical and Instrument Technique,Zhejiang University,Hangzhou 310027,China)
Influence of Annealing Temperature on Luminescence of β-FeSi_2 Particles Embedded in Silicon Li Cheng,Lai Hongkai,and Chen Songyan(Research Center for Semiconductor Photonics,Department of Physics,Xiamen University,Xiamen 361005,China)
Influence of Oxidation on Residual Strain Relaxation of SiGe Film Grown on SOI Substrate Jin Bo,Wang Xi,Chen Jing,Zhang Feng,Cheng Xinli,and Chen Zhijun(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)
Growth of Phosphorus-Doped p-Type ZnO Thin Films by MOCVD Zhou Xincui,Ye Zhizhen,Chen Fugang,Xu Weizhong,Miao Yan,Huang Jingyun,Lü Jianguo, Zhu Liping,and Zhao Binghui(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Photoresponse of ZnO Single Crystal Film Li Ying 1, ,Feng Shiwei1,Yang Ji1,Zhang Yuezong1,Xie Xuesong1, Lü Changzhi1,and Lu Yicheng2(1 School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China) (2 Department of Computer and Electrical Engineering,Rutgers University,Piscataway,NJ 08854,USA)
Ray Tracing Simulation of InGaN/GaN Light-Emitting Diodes with Parabolic Substrates Xia Changsheng,Li Zhifeng,Wang Chong,Chen Xiaoshuang,and Lu Wei(National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083,China)
Accurate Measurement of Forward Electrical Characteristics in Laser Diodes Cong Hongxia 1, ,Feng Liefeng1,Wang Jun1,Zhu Chuanyun1,Wang Cunda1, Xie Xuesong2,and Lü Changzhi2(1 Department of Applied Physics,Tianjin University,Tianjin 300072,China) (2 School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100022,China)
Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents Zhou Shouli,Cui Hailin,Huang Yongqing,and Ren Xiaomin(Beijing University of Posts and Telecommunications,Beijing 100876,China)
A Novel SOI High Voltage Device Structure with a Partial Locating Charge Trench Luo Xiaorong , Zhang Bo , Li Zhaoji , and Tang Xinwei(IC Design Center , University of Electronic Science & Technology, Chengdu 610054, China)
Total Dose Effect of Large-Scale Integrated Circuit Floating Gate ROM Devices He Baoping 1,2, ,Zhou Heqin1,Guo Hongxia2,Zhou Hui2,Luo Yinhong2, Yao Zhibin2,and Zhang Fengqi2(1 University of Science and Technology of China,Hefei 230026,China) (2 Northwest Institute of Nuclear Technology,Xi’an 710613,China)
Design and Implementation of a Novel Chip for Full Digital Three-Phase SPWM Signal Generation Gao Yong,Yu Ningmei,Chen Lijie,and Tang Shanqiang(Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China)
A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC Liu Jizhi,Chen Xingbi,and Li Ding (School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China)
A Low-Jitter and Low-Power Frequency Synthesizer Applied to 1000Base-T Ethernet Lu Ping,Wang Yan,Zheng Zengyu,and Ren Junyan(State Key Laboratory of ASIC & System,Fudan University,Shanghai 200433,China)
A Teeterboard Pattern MEMS Permanent Magnet Bistable Structure Supported by Torsion and Cantilever Beam Jiang Zheng,Ding Guifu,Wang Yan,Zhang Dongmei,Wang Zhiming,and Feng Jianzhi(Micro/Nano Science&Technology Research Institute,Shanghai Jiaotong University,Shanghai 200030,China)
A MEMS Based Focus Plane Array for Infrared Imaging Li Chaobo 1 ,Jiao Binbin1,Shi Shali1,Ye Tianchun1,Chen Dapeng 1, ,Zhang Qingchuan2, Guo Zheying2,Dong Fengliang2,and Wu Xiaoping2(1 Micro-Processing and Nano-Technology Department,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China) (2 Key Laboratory of Mechanical Behavior and Design of Materials,University of Science and Technology of China,Hefei 230027,China)
Effects of Die Bonding on MEMS Characteristics:Cell Library Song Jing,Huang Qing’an, and Tang Jieying(Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096,China)
Effect of Load Stiffness on the Output of Thermal Microactuators Gao Jianzhong,Zhao Yulong,Jiang Zhuangde,and Yang Jing(State Key Laboratory for Manufacturing Systems Engineering,Institute of Precision Engineering, Xi’an Jiaotong University,Xi’an 710049,China)
Transmission Lines Embedded in Silicon Oxide Layers on Silicon Wafers Sun Longjie 1,2, ,Yang Bo2,and Guo Lihui2(1 Microelectronics Institute,Xidian University,Xi’an 710071,China) (2 Microelectronics Institute,Xi’an University of Science and Technology,Xi’an 710075,China)
Direct Tunneling Effect in SiC Schottky Contacts Tang Xiaoyan,Zhang Yimen,Zhang Yuming,Guo Hui,and Zhang Lin(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China)
Investigation of ICP Etching Damage of InAsP/InP Strained Multiple Quantum Wells Cao Meng 1,2 ,Wu Huizhen 1, ,Lao Yanfeng1,Huang Zhanchao1,Liu Cheng1, Zhang Jun3,and Jiang Shan3(1 State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China) (2 Graduate School of Chinese Academy of Sciences,Beijing 100039,China) (3 Wuhan Research Institute of Posts & Telecommunications,Wuhan 430074,China)
A Modified Model for Etching a Sacrificial Layer in Bubble Structures Wu Changju,Ma Huilian,Jin Zhonghe,and Wang Yuelin(Department of Information Science & Electronic Engineering,Zhejiang University,Hangzhou 310027,China)
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