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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
半导体学报(英文版)
2007 -01
Catalog
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD Li Jiaye~,Zhao Yongmei,Liu Xingfang,Sun Guosheng,Luo Muchang, Wang Lei,Zhao Wanshun,Zeng Yiping,and Li Jinmin(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide Guo Hui~,Zhang Yimen,and Zhang Yuming(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronic School,Xidian University,Xi’an 710071,China)
Fabrication of SiC MESFETs for Microwave Power Applications Bai Song~,Chen Gang,Zhang Tao,Li Zheyang,Wang Hao,Jiang Youquan, Han Chunlin,and Chen Chen(National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China)
Off-State Breakdown Characteristics of PDSOI nMOSFETs Bi Jinshun~ and Hai Chaohe(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029, China)
Structural and Optical Performance of GaN Thick Film Grown by HVPE Wei Tongbo,Ma Ping,Duan Ruifei,Wang Junxi~,Li Jinmin,Liu Zhe, Lin Guoqiang,and Zeng Yiping(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
10Gb/s GaAs PHEMT Current Mode Transimpedance Preamplifier for Optical Receiver Jiao Shilong~ 1,2, ,Ye Yutang~1,Chen Tangsheng~2,Feng Ou~3,Jiang Youquan~3, Fan Chao~1,and Li Fuxiao~3 (1 School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China) (2 National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing 210016,China) (3 Nanjing Electronic Devices Institute,Nanjing 210016,China)
Waveguide Optimization for a 9.0μm GaAs-Based Quantum Cascade Laser Li Lu,Liu Fengqi~,Shao Ye,Liu Junqi,and Wang Zhanguo(Key Laboratory of Semiconductor Material Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
IC Implementation of a Programmable CMOS Voltage Reference Zhang Ke,Guo Jianmin,Kong Ming,and Li Wenhong~(State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China)
Strain Distribution and Piezoelectric Effect in GaN/AlN Quantum Dots Liang Shuang and Lu Yanwu~(Department of Physics,Beijing Jiaotong University,Beijing 100044,China)
Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing Zhou Jingtao,Zhu Hongliang~,Cheng Yuanbing,Wang Baojun,and Wang Wei(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Dissolution at High Temperature and Re-Growth of Oxygen Precipitation in Czochralski Silicon Wafer Fu Liming,Yang Deren~,Ma Xiangyang,Guo Yang,and Que Duanlin (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates Deng Hong~ 1, ,Tang Bin~ 1,2 ,Cheng He~1,Wei Min~1,and Chen Jinju~1(1 National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) (2 School of Science,Southwest Petroleum University,Chengdu 610500,China)
Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT Zhang Qunshe~ 1, ,Chen Zhiming~1,Li Liuchen~1,Yang Feng~2,Pu Hongbin~1,and Feng Xianfeng~1(1 Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China) (2 Xi’an Jiaotong University,Xi’an 710048,China)
Magnetic Viscosity of Si Melt Under a Magnetic Field Zhang Wen~,Xu Yuesheng,and Wang Shengli(School of Materials,Hebei University of Technology,Tianjin 300130,China)
Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor Chen Jiezhi~ 1, ,Shi Yi~1,Pu Lin~1,Long Shibing~2,Liu Ming~2,and Zheng Youdou~1(1 Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics, Nanjing University,Nanjing 210093,China) (2 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Effects of Passivation and FP Structure on Current Collapse in an AlGaN/GaN HEMT Ma Xiangbai~, Zhang Jincheng, Guo Liangliang, Feng Qian, and Hao Yue(Microelectronics School, Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi’an 710071, China)
Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT Liu Shuhuan~ 1,2, ,Lin Dongsheng~2,Guo Xiaoqiang~2,Liu Hongbing~3,Jiang Xinbiao~2, Zhu Guangning~2,Li Da~2,Wang Zujun~2,Chen Wei~2,Zhang Wei~4,Zhou Hui~2, Shao Beibei~1,and Li Junli~1(1 Department of Engineering Physics,Tsinghua University,Beijing 100084,China) (2 Northwest Institute of Nuclear Technology,Xi’an 710613,China) (3 The 13 Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China) (4 Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
An Inverter Unified Model of RTT Guo Weilian~ 1,2 ,Niu Pingjuan~1,Miao Changyun~1,Yu Xin~1,Wang Wei~ 1, ,Liang Huilai~2,Zhang Shilin~2, Li Jianheng~2,Song Ruiliang~2,Hu Liuchang~2,Qi Haitao~2,and Mao Luhong~2 (1 School of Information and Communication,Tianjin Polytechnic University,Tianjin 300106,China) (2 School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China)
Plasma-Induced Damage on 90nm-Technology MOSFETs Tang Yu~,Hao Yue,Meng Zhiqin,and Ma Xiaohua(Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University,Xi’ an 710071,China)
High-Efficiency n-nc-Si:H/p-c-Si Heterojunction Solar Cells Zhang Qunfang,Zhu Meifang~,Liu Fengzhen,and Zhou Yuqin(College of Physical Sciences,Graduate School of the Chinese Academy of Sciences,Beijing 100049,China)
High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector Yu Xiaodong~,Han Jun,Li Jianjun,Deng Jun,Lin Weizhi,Da Xiaoli, Chen Yixin,and Shen Guangdi(Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100022,China)
Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED Wang Xiaohua~,Zhan Wang,and Liu Guojun(State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology, Changchun 130022,China)
High-Power Ridge-Waveguide Tapered Diode Lasers at 14xx nm Li Jing~,Ma Xiaoyu,and Wang Jun(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China)
Design and Mechanical Characteristics of Novel MEMS Microneedles Sun Xiao~1,Jia Shuhai~ 1, ,Zhu Jun~2,and Li Yigui~2(1 Department of Optical Information Science and Technology,School of Science,Xi’an Jiaotong University,Xi’an 710049,China) (2 Research Institute of Micro/Nano Science and Technology,Shanghai Jiaotong University,Shanghai 200030,China)
Design and Analysis of a Long Wavelength MOEMS Tunable Filter Wu Xuming~ 1, ,Wang Xiaodong~1,He Guorong~2,Wang Qing~2,Cao Yulian~2,and Tan Manqing~1(1 Center of Optoelectronics Research and Development,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China) (2 Laboratory of Nano-Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Surface Damage and Removal of Ar~+ Etched InGaAs, n-InP and p-InP Lü Yanqiu~ 1,2, ,Yue Fangyu~ 1,2 ,Hong Xuekun~ 1,2 ,Chen Jiangfeng~1,Han Bing~ 1,2 , Wu Xiaoli~ 1,2 ,and Gong Haimei~1(1 Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China) (2 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China)
Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets Nie Yuhong~,Liu Yong,and Yao Shouguang(School of Mechanical & Power Engineering,Jiangsu University of Science and Technology,Zhenjiang 212003,China)
RF-CMOS Modeling:RF-MOSFET Modeling for Low Power Applications Liu Jun~,Sun Lingling,and Xu Xiaojun(Microelectronic CAD Center,Hangzhou Dianzi University,Hangzhou 310018, China)
Circuit Simulation of SEU for SRAM Cells Liu Zheng~,Sun Yongjie,Li Shaoqing,and Liang Bin(School of Computer Science,National University of Defense Technology,Changsha 410073,China)
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