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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
半导体学报(英文版)
2008 -01
Catalog
RTD’s Relaxation Oscillation Characteristics with Applied Pressure Tong Zhaomin,Xue Chenyang,Zhang Binzhen,Liu Jun,and Qiao Hui (National Key Laboratory for Electronic Measurement Technology,Key Laboratory of Instrumentation Science & Dynamic Measurement of the Ministry of Education,North University of China,Taiyuan 030051,China)
Properties of CdTe Source Prepared by Close-Spaced Sublimation in O_2 Atmosphere Zeng Guanggen,Li Bing,Zheng Jiagui,Li Yuanjie,Zhang Jingquan,Li Wei,Lei Zhi, Wu Lili,Cai Yaping,and Feng Lianghuan(College of Material Science and Engineering,Sichuan University,Chengdu 610064,China)
PL Emission of Low-Dimensional Structures Formed by Laser Irradiation Huang Weiqi1,,Wu Keyue1,Xu Li1,Wang Haixu1,Jin Feng1,Liu Shirong2, Qin Zhaojian2,and Qin Shuijie1(1 Key Laboratory of Photoelectron Technology and Application,Guizhou University,Guiyang 550026,China) (2 Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550003,China)
The Bipolar Field-Effect Transistor: III.Short Channel Electrochemical Current Theory (Two-MOS-Gates on Pure-Base) Jie Binbin1, and Sah Chih-Tang1,2,3, (1 Peking University,Beijing 100084,China) (2 University of Florida,Gainesville,Florida 32605,USA) (3 Chinese Academy of Sciences,Foreign Member,Beijing 100864,China)
Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition Shi Huiling,Ma Xiaoyu,Hu Like,and Chong Feng(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
A Near-1V 10ppm/℃ CMOS Bandgap Reference with Curvature Compensation Xing Xinpeng1,,Li Dongmei2,and Wang Zhihua1(1 Institute of Microelectronics,Tsinghua University,Beijing 100084,China) (2 Department of Electronics Engineering,Tsinghua University,Beijing 100084,China)
Polysilicon Over-Etching Time Control of Advanced CMOS Processing with Emission Microscopy Zhao Yi1, and Wan Xinggong2 (1 Department of Materials Engineering,University of Tokyo,Tokyo 113-8656,Japan) (2 Shanghai IC R & D Center,Shanghai 201203,China)
A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer Zou Zeya1,2,,Yang Mohua1,Liu Ting2,Zhao Wenbo2,Zhao Hong2, Luo Muchang2,and Wang Zhen2(1 State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) (2 Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
Optical and Electrical Properties of GaN:Mg Grown by MOCVD Wang Lili,Zhang Shuming,Yang Hui,and Liang Junwu(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
A Robust Low Power Chaos-Based Truly Random Number Generator Zhou Tong,Zhou Zhibo,Yu Mingyan,and Ye Yizheng(Microelectronics Center,Harbin Institute of Technology,Harbin 150001,China)
Organic,Bistable Devices with AgTCNQ Charge Transfer Complex by Vacuum Co-Deposition Tu Deyu1,Ji Zhuoyu2,Shang Liwei1,Liu Ming1,,Wang Congshun1,and Hu Wenping2(1 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029,China) (2 Beijing National Laboratory of Molecular Sciences,Key Laboratory of Organic Solids,Institute of Chemistry, Chinese Academy of Sciences,Beijing 100080,China)
A High-Efficiency Fiber-to-Waveguide Coupler with Low Polarization Dependence Using a Diluted Waveguide in InP Substrate with a 1.55μm Wavelength Zhang Yun,Zuo Yuhua,Guo Jianchuan,Ding Wuchang,Cheng Buwen, Yu Jinzhong,and Wang Qiming(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
A 12~18GHz Wide Band VCO Based on Quasi-MMIC Wang Shaodong,Gao Xuebang,Wu Hongjiang,Wang Xiangwei,and Mo Lidong(Hebei Semiconductor Research Institute,Shijiazhuang 050051,China)
A CMOS Dynamic Comparator for Pipelined ADCs with Improved Speed/Power Ratio Liu Ke1,2 and Yang Haigang1,(1 State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China) (2 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China)
A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation Liu Jie1,2,3,,Zhou Jicheng1,Luo Hongwei2,Kong Xuedong2,En Yunfei2, Shi Qian2,He Yujuan2,and Lin Li2(1 Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China) (2 National Key Laboratory for Reliability Physics and Application Technology of Electronic Components, CEPREI,Guangzhou 510610,China) (3 Department of Material Science and Technology,Zhongnan University, Changsha 410083,China)
A Poly-Crystalline Si Anode Microcavity Organic Light Emitting Device and Its Simplified Preparation Process Flow Li Yang1,,Meng Zhiguo1,Wu Chunya1,Man Wong2,Hoi Sing Kwok2, Zhang Fang3,and Xiong Shaozhen1(1 Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China) (2 Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong,China) (3 The Center of R & D for High Technology,MOS,Beijing 100044,China)
Organic Light-Emitting Diodes by Doping Liq into an Electron Transport Layer Xu Wei1,2,, Lu Fuhan1,Jiang Xueyin1,Zhang Zhilin1,2,Zhu Wenqing1,2,and Xu Gui3(1 Department of Materials Science,Shanghai University,Jiading 201800,China) (2 Key Laboratory of Advanced Display and System Applications of the Ministry of Education,Shanghai University, Shanghai 200072,China) (3 Baotou Power Supply Bureau,Inner Mongolia 014030,China)
A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs Tang Junxiong,Tang Minghua,Yang Feng,Zhang Junjie,Zhou Yichun,and Zheng Xuejun(Key Laboratory of Low Dimensional Materials & Application Technology of the Ministry of Education, Faculty of Material & Optoelectronic Physics,Xiangtan University,Xiangtan 411105,China)
Fabrication and Memory Characteristics of a New Organic Thin Film Device Guo Peng,Ji Xin,Dong Yuanwei,Lü Yinxiang,and Xu Wei(Department of Materials Science,Fudan University,Shanghai 200433,China)
Design,Fabrication,and Characterization of Dual Channel Real Space Transfer Transistors Guo Weilian1,2,Zhang Shilin1,Liang Huilai1,Qi Haitao1,Mao Luhong1,Niu Pingjuan2,Yu Xin2,, Wang Wei2,Wang Wenxin3,Chen Hong3,and Zhou Junming3(1 School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China) (2 School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China) (3 Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China)
Growth of p-GaN on High-Temperature AlN Templates Liu Ting1,,Zou Zeya2,Wang Zhen1,Zhao Hong1,Zhao Wenbo1,Luo Muchang1,Zhou Xun2, Yang Xiaobo1,and Liao Xiuying1(1 Chongqing Optoelectronics Research Institute,Chongqing 400060,China) (2 State key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
Radial Distribution of Grown-In Oxygen Precipitates in a 300mm Nitrogen-Doped Czochralski Silicon Wafer Tian Daxi,Ma Xiangyang,Zeng Yuheng,Yang Deren,and Que Duanlin(State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
A Simulation of the Capacitance-Voltage Characteristics of a Ge/Si Quantum-Well Structure Cheng Peihong and Huang Shihua (Department of Physics,Zhejiang Normal University,Jinhua 321004,China)
Bandgap Energies in Strain-Free Ga_(1-x)In_xN_yAs_(1-y)/GaAs QWs After Annealing Wen Yuhua,Tang Jiyu,Zhao Chuanzhen,Wu Liangzhen,Kong Yunting,Tang Lili, Liu Chao,Wu Lifeng,Li Shunfang,and Chen Junfang(College of Physics and Telecommunication,South China Normal University,Guangzhou 510006,China)
Low Power Design Orienting 384×288 Snapshot Infrared Readout Integrated Circuits Liu Dan,Lu Wengao,Chen Zhongjian,Ji Lijiu,and Zhao Baoying(Department of Microelectronics,Peking University,Beijing 100871,China)
Fast-Lock Low-Jitter PLL with a Simple Phase-Frequency Detector Chen Yingmei, Wang Zhigong, and Zhang Li(Institute of RF & OE-ICs,Southeast University,Nanjing 210096,China)
A Metropolis Monte Carlo Simulation Approach for Anisotropic Wet Etching and Its Applications Zhu Peng,Xing Yan,Yi Hong,and Tang Wencheng(Laboratory of Advanced Manufacture,Department of Mechanical Engineering,Southeast University,Nanjing 211189,China)
Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive Cheng Wenjin1,2,Tang Zirong1,2,,Liao Guanglan1,2,Shi Tielin1,2, Lin Xiaohui1,2,and Peng Ping1,2(1 School of Mechanical Science & Engineering,Huazhong University of Science and Technology,Wuhan 430074,China) (2 Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China)
Electromigration of Cu-Ni/Solder/Ni-Cu Structures Zhang Jinsong,Xi Hongjia,Wu Yiping,and Wu Fengshun (Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China)
Micro-Sized SnAg Solder Bumping Technology and Bonding Reliability Lin Xiaoqin1,2,,Zhu Dapeng1,2,and Luo Le1(1 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China) (2 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China)
A Statistical Method for Characterizing CMOS Process Fluctuations in Subthreshold Current Mirrors Zhang Lei,Yu Zhiping,and He Xiangqing (Institute of Microelectronics,Tsinghua University,Beijing 100084,China)
A Low-Power,Single-Poly,Non-Volatile Memory for Passive RFID Tags Zhao Dixian1,Yan Na1,Xu Wen2,Yang Liwu2,Wang Junyu1,,and Min Hao1(1 State Key Laboratory of ASIC & Systems,Fudan University,Shanghai 201203,China) (2 Design Services,Semiconductor Manufacturing International (Shanghai) Corp., Shanghai 201203,China)
Thermally Induced Packaging Effect on the Resonant Frequencies of a Fixed-Fixed Beam Li Ming,Song Jing,Huang Qing’an,and Tang Jieying(Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China)
Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes Wang Xinhua,Wang Xiaoliang,Feng Chun,Ran Junxue,Xiao Hongling,Yang Cuibai, Wang Baozhu,and Wang Junxi (Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
Analysis of Pull-In Voltage of RF MEMS Switches Dong Qiaohua,Liao Xiaoping,Huang Qing’an,and Huang Jianqiu(Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing 210096,China)
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