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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2010 -01
Catalog
Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals Peng Yinsheng Ye Xiaoling Xu Bo Jin Peng Niu Jiebin Jia Rui Wang Zhanguo (1 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) (2 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Electronic structures of an(8,0) boron nitride/carbon nanotube heterojunction Liu Hongxia Zhang Heming Song Jiuxu Zhang Zhiyong (1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Mieroelectronics, Xidian University,Xi'an 710071,China) (2 School of Electronic Engineering,Xi 'an Shiyou University,Xi'an 710065,China) (3 Information Science and Technology Institution,Northwest University,Xi'an 710069,China)
Optimization of grid design for solar cells Liu Wen Li Yueqiang Chen Jianjun Chen Yanling Wang Xiaodong Yang Fuhua (Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083,China)
Low-power variable frequency PFC converters Li Yani Yang Yintang Zhu Zhangming (Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics,Xidian University,Xi'an 710071,China)
Calculation of band edge levels of strained Si/(111)Si_(1-x)Ge_x Song Jianjun Zhang Heming Hu Huiyong Dai Xianying Xuan Rongxi (Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China)
Influence of gold particle size on melting temperature of VLS grown silicon nanowire Jiang Yanfeng Zhang Yamin (Microelectronic Center,College of Information Engineering,North China University of Technology,Beijing 100144,China)
Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique Li Yongfu Tang Hengjing Li Tao Zhu Yaoming Jiang Peilu Qiao Hui Li Xue Gong Haimei (1 State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083,China) (2 Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083,China) (3 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China)
Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers Zhao Lixin Jin Zhi Liu Xinyu (Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Short channel effect in deep submicron PDSOI nMOSFETs Bu Jianhui Bi Jinshun Song Limei Han Zhengsheng (Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress Zhu Jing Qian Qinsong Sun Weifeng Liu Siyang (National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)
Design of a high-performance PJFET for the input stage of an integrated operational amplifier Shui Guohua Tang Zhaohuan Wang Zhikuan Ou Hongqi Yang Yonghui Liu Yong Wang Xueyi (1 Sichuan Institute of Solid-State Circuits,CETC,Chongqing 400060,China) (2 National Laboratory of Analog ICs,Chongqing 400060,China)
A novel fabrication approach for an athermal arrayed-waveguide grating Zhou Tianhong Ma Weidong (Accelink Technologies Co,Ltd,Wuhan 430074,China)
A 4224 MHz low jitter phase-locked loop in 0.13-μm CMOS technology Chen Hu Lu Bo Shao Ke Xia Lingli Huang Yumei Hong Zhiliang (State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China)
A high performance 90 nm CMOS SAR ADC with hybrid architecture Tong Xingyuan Chen Jianming Zhu Zhangming Yang Yintang (1 Institute of Microelectronics,Xidian University,Xi'an 710071,China) (2 Corp DS,Semiconductor Manufacturing International Corporation,Shanghai 201203,China)
An X-band four-way combined GaN solid-state power amplifier Chen Chi Hao Yue Feng Hui Gu Wenping Li Zhiming Hu Shigang Ma Teng (National Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University, Xi'an 710071,China)
A 2.4 GHz power amplifier in 0.35μm SiGe BiCMOS Hao Mingli Shi Yin (1 Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) (2 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
A Ka-band low-noise amplifier with a coplanar waveguide(CPW)structure with 0.15-μm GaAs pHEMT technology Wu Chia-Song Chang Chien-Huang Liu Hsing-Chung Lin Tah-Yeong Wu Hsien-Ming (1 Department of Electronic Engineering,Vanung University,Chung-Li,Taiwan,China) (2 Materials & Electro-Optics Research Division,Chung-Shan Institute of Science & Technology,Taiwan,China)
Full on-chip and area-efficient CMOS LDO with zero to maximum load stability using adaptive frequency compensation Ma Haifeng Zhou Feng (State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China)
Study and analysis of coefficient mismatch in a MASH21 sigma-delta modulator Ge Binjie Wang Xin'an Zhang Xing Feng Xiaoxing Wang Qingqin (Key Laboratory of Integrated Microsystem Science & Engineering Applications,Shenzhen Graduate School of Peking University,Shenzhen 518055,China)
A high efficiency charge pump circuit for low power applications Feng Peng Li Yunlong Wu Nanjian (State Key Laboratory for Super Lattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China)
A novel precision curvature-compensated bandgap reference Zhou Zekun Ming Xin Zhang Bo Li Zhaoji (State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054,China)
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