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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2011 -01
Catalog
Physical properties of hematite α-Fe_2O_3 thin films:application to photoelectrochemical solar cells S.S.Shinde,R.A.Bansode,C.H.Bhosale,and K.Y.Rajpure~+ Electrochemical Materials Laboratory,Department of Physics,Shivaji University,Kolhapur 416004,India
Thermal analysis of LED lighting system with different fin heat sinks Hou Fengze~1,Yang Daoguo~(1,+),and Zhang Guoqi 1 School of Mechanical & Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,China 2 Philips Lighting,Eindhoven,the Netherlands
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor Lu Pengzhi~+,Yang Hua,and Wang Guohong Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Absorption of photons in the thin film AlGalnP light emitting diode Gao Wei,Guo Weiling~+,Zou Deshu,Jiang Wenjing Liu Zike,and Shen Guangdi Key Laboratory of Opto-Electronics Technology of the Ministry of Education,Beijing University of Technology, Beijing 100124,China
Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy Wang Lai~(1,+),Hao Zhibiao~1,Han Yanjun~1,Luo Yi Wang Lanxi~2,and Chen Xuekang~2 1 Tsinghua National Laboratory for Information Science and Technology,State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering,Tsinghua University,Beijing 100084,China 2 National Key Laboratory for Surface Engineering,Lanzhou Institute of Physics,Lanzhou 730000,China
A 455 nW 220 fJ/conversion-step 12 bits 2 kS/s SAR ADC for portable biopotential acquisition systems Zhang Hui,Qin Yajie~+,Yang Siyu,and Hong Zhiliang State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China
A 12-bit 40-MS/s SHA-less pipelined ADC using a front-end RC matching technique Fan Mingjun,Ren Junyan~(1,2),Shu Guanghua~1,GuoYao Li Ning~1,Ye Fan~1,and Xu Jun 1 State Key Laboratory of ASIC & Systems,Fudan University,Shanghai 201203,China 2 Micro-Nanoelectronics Science and Technology Innovation Platform,Fudan University,Shanghai 201203,China 3 The MediaTek Inc.,Beijing 100080,China
A low power 12-bit 30 MSPS CMOS pipeline ADC with on-chip voltage reference buffer Chen Qihui,Qin Yajie,Lu Bo and Hong Zhiliang State Key Laboratory of ASIC and System,Fudan University,Shanghai 201203,China
A continuous-time/discrete-time mixed audio-band sigma delta ADC Liu Yan~+,Hua Siliang,Wang Donghui,and Hou Chaohuan Institute of Acoustics,Chinese Academy of Sciences,Beijing 100190,China
A digital calibration technique for an ultra high-speed wide-bandwidth folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology Yu Jinshan~+,Zhang Ruitao~1,Zhang Zhengping, Wang Yonglu~1,Zhu Can~1,Zhang Lei~1,Yu Zhou and Han Yong 1 National Laboratory of Analog IC's,Chongqing 400060,China 2 12th Institute of CETC,Beijing 100016,China 3 School of Computer University of Defense Technology,Changsha 410073,China
Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system Mark N.Lockrey and Matthew R.Phillips Physics and Advanced Materials,University Technology,Sydney,PO Box 123,Broadway,Sydney,Australia
Effect of temperature and moisture on the luminescence properties of silicone filled with YAG phosphor Zhang Qin Jiao Feng Chen Zhaohui,Xu Ling Wang Simin,and Liu Sheng 1 Institute for Microsystems,School of Mechanical Science and Engineering,Huazhong University of Science & Technology, Wuhan 430074,China 2 Division of MOEMS,Wuhan National Laboratory for Optoelectronics,Wuhan 430074,China 3 School of Material Science and Engineering,Huazhong University of Science & Technology,Wuhan 430074,China
Effect of strontium nitride on the properties of Sr_2Si_5N_8:Eu~(2+) red phosphor Teng Xiaoming,Liang Chao,and He Jinhua Jiangsu Bree Optronics Co.Ltd.,Nanjing 211003,China
Photoelectric properties of ITO thin films deposited by DC magnetron sputtering Liu Wei and Cheng Shuying College of Physics and Information Engineering,Institute of Micro-Nano Devices & Solar Cells,Fuzhou University, Fuzhou 350108,China
Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth Koh Matsumoto~(1,+),Kazutada Ikenaga~2,Jun Yamamoto~1,Kazuki Naito~2,Yoshiki Yano~2, Akinori Ubukata~2,Hiroki Tokunaga~2,Tadanobu Arimura~2,Katsuaki Cho~2,Toshiya Tabuchi~2, Akira Yamaguchi~3,Yasuhiro Harada~1,Yuzaburo Ban~1,and Kousuke Uchiyama~1 1 TN-EMC Ltd,2008-2 Wada,Tama,Tokyo 206-0001,Japan 2 Business Strategy Planning div.Electronics Group,TAIYO NIPPON SANSO Corporation,10 Okubo, Tsukuba 300-2611,Japan 3 Compound-semiconductor Division,TAIYO NIPPON SANSO Corp.,6-2 Kojimacho,Kawasaki-shi,210-0861,Japan
Fluorescent SiC and its application to white light-emitting diodes Satoshi Kamiyama~(1,+),Motoaki Iwaya~1,Tetsuya Takeuchi~1,Isamu Akasaki~1, Mikael Syvjrvi~2,and Rositza Yakimova~2 1 Department of Materials Science and Engineering,Meijo University,1-501 Shiogamaguchi,Tenpaku-ku, Nagoya 468-8502,Japan 2 Department of Physics,Chemistry and Biology,Linkping University,S581 83 Linkping,Sweden
Avalanche behavior of power MOSFETs under different temperature conditions Lu Jiang,Wang Lixin,Lu Shuojin,Wang Xuesheng and Han Zhengsheng Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
A total dose radiation model for deep submicron PDSOI NMOS Bu Jianhui,Bi Jinshun,Liu Mengxin,and Han Zhengsheng Institute of Microelectronics,Chinese Academy ot Sciences,Beijing 100029,China
Complementary charge islands structure for a high voltage device of partial-SOI Wu Lijuan~(2,+) Hu Shengdong,Zhang Bo,and Li Zhaoji 1 State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China 2 College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China 3 College of Communication Engineering,Chongqing University,Chongqing 400044,China
Degradation of light emitting diodes:a proposed methodology Sau Koh~(1,2,+),Willem Van Driel~(1,2,3),and G.Q.Zhang~1 1 Delft Institute of Microsystems and Nanoelectronics(Dimes),Delft University of Technology,Mekelweg 6, 2628CD Delft,Netherlands 2 Materials Innovation Institute(M2i),Mekelweg 2,2628 CD,Delft,Netherlands 3 Philips Lighting,LightLabs,NL-5611BD,Eindhoven,Netherlands
Spacing optimization of high power LED arrays for solid state lighting Y.Sing Chan and S.W.Ricky Lee~+ Electronic Packaging Laboratory,Center for Advanced Microsystems Packaging,Hong Kong University of Science and Technology,Hong Kong,China
Reliability test and failure analysis of high power LED packages Chen Zhaohui~1,Zhang Qin~3,Wang Kai~3,Luo Xiaobing and Liu Sheng Research Institute of Micro/Nano Science and Technology Shanghai Jiao Tong University Shanghai 200240,China Wuhan National Laboratory for Optoelectronics Huazhong University of Science & Technology Wuhan 430074,China Institute of Microsystems,School of Mechanical Science and Engineering,Huazhong University of Science & Technology Wuhan 430074,China
A review of passive thermal management of LED module Ye Huaiyu~(1,2,+),Sau Koh~(1,2),Henk van Zeijl~1,A.W.J.Gielen~3, and Zhang Guoqi 1 Delft Institute of Microsystems and Nanoelectronics(Dimes),Delft University of Technology,Mekelweg 6,2628CD, Delft,Netherlands 2 Materials Innovation Institute(M2i),Mekelweg 2,2628 CD,Delft,Netherlands 3 Netherlands Organization for Applied Scientific Research(TNO),De Rondom 1,5612 AP,Eindhoven,Netherlands
Thermal design for the high-power LED lamp Tian Xiaogai~+,Chen Wei,and Zhang Jiyong NVC Lighting Technology Corporation Research & Development Center(Shanghai),Shanghai 201112,China
ICP dry etching ITO to improve the performance of GaN-based LEDs Meng Lili~+,Chen Yixin,Ma Li,Liu Zike, and Shen Guangdi Key Laboratory of Opto-Electronics Technology of the Ministry of Education,Beijing University of Technology, Beijing 100124,China
A multivariate process capability index model system Wang Shaoxi~(1,+) and Wang Danghui 1 College of Software and Microelectronics,Northwestern Polytechnical University,Xi'an 710072,China 2 School of Computer Science and Technology,Northwestern Polytechnical University,Xi'an 710072,China
Surface-type humidity sensor based on cellulose-PEPC for telemetry systems Kh.S.Karimov~(1,2),M.Saleem~(1,3,+),T.A.Qasuria~1,and M.Farooq~1 1 GIK Institute of Engineering Sciences and Technology,Topi-23640,District Swabi,Pakistan 2 Physical Technical Institute,Aini St.299/1,Dushanbe,734063,Tajikistan 3 Government Shalimar College,Lahore,Pakistan
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