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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2012 -01
Catalog
Effect of rhenium doping on various physical properties of single crystals of MoSe_2 Mihir M.Vora~1 and Aditya M.Vora~(1,2,+) 1 Parmeshwari 165,Vijaynagar Area,Hospital Road,Bhuj-Kutch,370001,Gujarat,India 2 Humanities and Social Science Department,S.T.B.S.College of Diploma Engineering,Shri Swami Atmanand Sarswati Vidya Sankul,Opp.Kapodra Police Station,Varachha Road,Surat 395 006,Gujarat,India
First principle study of the electronic structure of hafnium-doped anatase TiO_2 Li Lezhong~+,Yang Weiqing,Ding Yingchun and Zhu Xinghua Department of Optics and Electronics,Chengdu University of Information Technology,Chengdu 610225,China
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga_2O_3 films Li Ting,Yan Jinliang~+,Ding Xingwei,and Zhang Liying School of Physics,Ludong University,Yantai 264025,China
Aluminum/MoO_3 anode thin films:an effective anode structure for high-performance flexible organic optoelectronics Ding Lei~(1,+),Zhang Fanghui~2,Ma Ying~1,and Zhang Maili 1 School of Electrical and Information Engineering,Shaanxi University of Science & Technology,Xi'an 710021,China 2 Shaanxi Panel Display Engineering Center.Xi'an 710021,China
SEE characteristics of small feature size devices by using laser backside testing Feng Guoqiang~+,Shangguan Shipeng,Ma Yingqi, and Han Jianwei Center for Space Science and Applied Research,Chinese Academy of Sciences,Beijing 100190,China
A 1500 mA,10 MHz on-time controlled buck converter with ripple compensation and efficiency optimization Yu Jiale,L~(u|¨) Danzhu,Hong Zhiliang State Key Laboratory of ASIC & System,Fudan University,Shanghai 201203,China
MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities Jie Binbin~(2,+) and Sah Chihtang~(1,2,+) 1 Department of Physics.Xiamen University,Xiamen 361005,China 2 CTSAH Associates,Gainesville,Florida 32605,USA
Ferromagnetism in Fe-doped CuO nanopowder Zhao Jing~(1,+),Xia Qinglin~2,and Li Jinmin 1 Semiconductor Lighting Research and Development Center.Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China 2 School of Physics and Electronics,Central South University,Changsha 410083,China
Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects Toufik Bentrcia~1,Faycal Djeffal~(2,+),and Abdel Hamid Benhaya~2 1 Department of Physics,University of Batna,Batna 05000,Algeria 2 LEA,Department of Electronics.University of Batna.Batna 05000,Algeria
Characteristics of AlGaN/GaN/AlGaN double heteroj unction HEMTs with an improved breakdown voltage Ma Juncai~+,Zhang Jincheng,Xue Junshuai,Lin Zhiyu Liu Ziyang,Xue Xiaoyong,Ma Xiaohua,Hao Yue Key Laboratory of Wide Band Gap Semiconductor Materials and Devices.School of Microelectronics.Xidian University, Xi'an 710071,China
A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE Ge Qin Chen Xiaojuan,Luo Weijun,Yuan Tingting Pu Yan1 Liu Xinyu Key Laboratory of Microwave Devices & Integrated Circuits.Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029,China
High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V Cheng Wei,Zhao Yan,Gao Hanchao,Chen Chen and Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016,China
Impact of parasitic resistance on the ESD robustness of high-voltage devices Lin Lijuan~+,Jiang Lingli,Fan Hang,and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology, Chengdu 610054,China
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs Cui Jiangwei~(1,2,3,+),Xue Yaoguo~4,Yu Xuefeng~(1,2), Ren Diyuan~2,LuJian~(1,2,3),and Zhang Xingyao~(1,2,3) 1 Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences.Urumqi 830011,China 2 Xinjiang Key Laboratory of Electric Information Materials and Devices,Urumuqi 830011,China 3 Graduate University of the Chinese Academy of Sciences,Beijing 100049,China 4 Xi'an Microelectronic Technology Institute,Xi'an 710055,China
Improved spectral characteristics of 980 nm broad area slotted Fabry-Perot diode lasers Gao Zhuo,Wang Jun,Xiong Cong,Liu Yuanyuan Liu Suping,and Ma Xiaoyu Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Influence of doping position on the extinction ratio of Mach-Zehnder-interference based silicon optical modulators Zhao Yong,Wang Wanjun,Shao Haifeng,Yang Jianyi, Wang Minghua,and Jiang Xiaoqing Department of Information Science and Electronics Engineering,Zhejiang University,Hangzhou 310027,China
A 3 to 5 GHz low-phase-noise fractional-N frequency synthesizer with adaptive frequency calibration for GSM/PCS/DCS/WCDMA transceivers Pan Yaohua~+,Mei Niansong,Chen Hu,Huang Yumei, and Hong Zhiliang State Key Laboratory of ASIC & Systems,Fudan University,Shanghai 201203,China
A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18μm CMOS Bao Kuan,Fan Xiangning,Li Wei,Zhang Li Wang Zhigong Institute ot'RF- & OE-ICs,Southeast University,Nanjing 210096.China
High performance power-configurable preamplifier in a high-density parallel optical receiver Wang Xiaoxia Wang Zhigong Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China
A high dynamic range linear RF power detector with a preceding LNA Dai Yingbo,Han Kefeng,Yan Na~+,Tan Xi State Key Laboratory of ASIC & System,Fudan University.Shanghai 201203.China
Design of a 0.5 V CMOS cascode low noise amplifier for multi-gigahertz applications Liu Baohong~(1,+),Zhou Jianjun Mao Junfa 1 Center for Microwave and RF Technologies,Shanghai Jiao Tong University,Shanghai 200240,China 2 Center for Analog/RF Integrated Circuits,Shanghai Jiao Tong University,Shanghai 200240,China
A 18-mW,20-MHz bandwidth,12-bit continuous-time∑△modulator using a power-efficient multi-stage amplifier Li Ran,Li Jing,Yi Ting Hong Zhiliang State Key Laboratory of ASIC and System,Fudan University,Shanghai 201203,China
A high-performance MUX-direct digital frequency synthesizer with quarter ROMs Hao Zhikun~(2,+),Zhang Qiang,NiWeining~1,and Shi Yin 1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2 Department of Electronic Engineering.Tsinghua University,Beijing 100084,China
A 0.8-3 GHz RF-VGA with 35 dB dynamic range in 0.13μm CMOS Qin Xi,Huang Xingli,Qin Yajie,and Hong Zhiliang State Key Laboratory of ASIC and System.Fudan University,Shanghai 201203,China
An IO block array in a radiation-hardened SOI SRAM-based FPGA Zhao Yan~+,Wu Lihua,Han Xiaowei,Li Yan Zhang Qianli,Chen Liang,Zhang Guoquan,Li Jianzhong, Yang Bo,Gao Jiantou,Wang Jian,Li Ming,Liu Guizhai Zhang Feng,Guo Xufeng,Zhao Kai,Stanley L.Chen Yu Fang,and Liu Zhongli Institute of Semiconductors.Chinese Academy of Sciences,Beijing 100083.China
An offset cancellation technique in a switched-capacitor comparator for SAR ADCs Tong Xingyuan~(1,+),Zhu Zhangming~2,and Yang Yintang 1 School of Electronic Engineering,Xi'an University of Posts & Telecommunications,Xi'an 710121,China 2 Institute of Microelectronics,Xidian University,Xi'an 710071,China
Direct extraction of equivalent circuit parameters for on-chip spiral transformers Wei Jiaju,Wang Zhigong~+ Li Zhiqun Institute of RF- & OE-ICs,Southeast University,Nanjing 210096,China
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