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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2013 -01
Catalog
Properties of a polaron in a quantum dot:a squeezed-state variational approach Yin Jiwen,Li Weiping,and Yu Yifu Department of Physics and Electronic Informational Engineering,Inner Mongolia Chifeng College,Chifeng 024000,China
Cu doped AlSb polycrystalline thin films Wu Lili,Jin Shuo,Zeng Guanggen.,Zhang Jingquan,Li Wei,Feng Lianghuan,Li Bing,and Wang Wenwu College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China
Ultrasonic spray pyrolysis deposition of SnSe and SnSe_2 using a single spray solution Jorge Sergio Narro-Rios,Manoj Ramachandran,Dalia Martínez-Escobar,and Aarón Snchez-Jurez Centro de investigación en Energía,UNAM,P.O.Box 34,62580 Temixco,Morelos,Mxico
Influence of Cu_xS back contact on CdTe thin film solar cells Lei Zhi,Feng Lianghuan,Zeng Guanggen,Li Wei,Zhang Jingquan,Wu Lili,and Wang Wenwu College of Materials Science and Engineering,Sichuan University,Chengdu 610041,China
Calculation of surface acoustic waves in a multilayered piezoelectric structure Zhang Zuwei1;2;3;.Wen Zhiyu1;2;3,and Hu Jing1;2;3 1Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology,Chongqing University,Chongqing 400030,China 2National Center for International Research of Micro/Nano-System and New Material Technology,Chongqing University,Chongqing 400030,China 3Microsystem Research Center,Chongqing University,Chongqing 400030,China
First-principles calculation on the concentration of intrinsic defects in 4H-SiC Cheng Ping1;Zhang Yuming2,and Zhang Yimen2 1School of Information and Engineering,Ningbo Dahongying University,Ningbo 315175,China 2Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode Deepak K.Karan,Pranati Panda,and G.N.Dash.School of Physics,Sambalpur University,Jyoti Vihar,Burla,Sambalpur - 768 019(Odisha),India
Analysis of the subthreshold characteristics of vertical tunneling field effect transistors Han Zhongfang,Ru Guoping.and Ruan Gang State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433,China
Capacitance and conductance dispersion in AlGaN/GaN heterostructure Yan Dawei.,Wang Fuxue,Zhu Zhaomin,Cheng Jianmin,and Gu Xiaofeng Key Laboratory of Advanced Process Control for Light Industry(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China
Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs Mei Bo,Bi Jinshun,Bu Jianhui,and Han Zhengsheng.Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
SPTC~+-IGBT characteristics and optimization Chu Weili1,Zhu Yangjun1;2;Zhang Jie1;2,and Hu Aibin1 1Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China 2Jiangsu R&D Center for Internet of Things,Wuxi 214135,China
Increasing substrate resistance to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS He Chuan.,Jiang Lingli,Fan Hang,and Zhang Bo State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054,China
A novel broadband power amplifier in SiGe HBT technology Li Wenyuan.and Zhang Qian Institute of RF-& OE-ICs,Southeast University,Nanjing 210096,China
A fully integrated multi-standard frequency synthesizer for GNSS receivers with cellular network positioning capability Li Bin,Fan Xiangning.,Li Wei,Zhang Li,and Wang Zhigong Institute of RF-& OE-ICs,School of Information Science and Engineering,Southeast University,Nanjing 210096,China
A wideband current-commutating passive mixer for multi-standard receivers in a 0.18 μm CMOS Bao Kuan,Fan Xiangning.,Li Wei,and Wang Zhigong Institute of RF-&OE-ICs,School of Information Science and Engineering,Southeast University,Nanjing 210096,China
A wideband 0.13 μm CMOS LC-VCO for IMT-advanced and UWB applications Tang Xin.,Huang Fengyi,Tang Xusheng,and Shao Mingchi RF & OEIC Research Institute,National Mobile Communications Research Laboratory,Southeast University,Nanjing 210096,China
Design of a novel mixer with high gain and linearity improvement for DRM/DAB applications Wu Yiqiang,Wang Zhigong.,Xu Jian,Wang Jian,Zhang Ouli,and Tang Lu Institution of RF-& OE-ICs,Southeast University,Nanjing 210096,China
Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter Wu Xue1;2;3,Lu Wu1;2;Wang Yiyuan1;2;3,Xu Jialing1;4,Zhang Leqing1;2;3,Lu Jian1;2;3,Yu Xin1;2;3,Zhang Xingyao1;2;3,and Hu Tianle1;4 1Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China 2Xinjiang Key Laboratory of Electronic Information Materials and Devices,Urumqi 830011,China 3University of Chinese Academy of Sciences,Beijing 100049,China 4Xinjiang University,Urumqi 830046,China
A new LTPS TFT AC pixel circuit for an AMOLED Zhang Yongwen and Chen Wenbin.School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China
An 11-bit ENOB,accuracy-programmable,and non-calibrating time-mode SAR ADC Fan Hua.,Han Xue,Wei Qi,and Yang Huazhong Division of Circuits and Systems,Department of Electronic Engineering,Tsinghua University,Beijing 100084,China
A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp Pan Hongwei.,Liu Siyang,and Sun Weifeng National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
Monolithic quasi-sliding-mode controller for SIDO buck converter with a self-adaptive free-wheeling current level Wu Xiaobo,Liu Qing,Zhao Menglian.,and Chen Mingyang Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China
A wideband frequency synthesizer with VCO and AFC co-design for fast calibration Lou Liheng1;2,Sun Lingling2,Gao Haijun2,and Zhan Haiting2 1Institute of VLSI,Zhejiang University,Hangzhou 310007,China 2Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,China
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