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半导体学报(英文版)
FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
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半导体学报(英文版)
2014 -01
Catalog
Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field N.Sahoo;T.Sahu;Department of Electronic Science, Berhampur University;Department of Electronics and Communication Engineering, National Institute of Science and Technology;
A first-principle investigation of the oxygen defects in Si_3N_4-based charge trapping memories Luo Jing;Lu Jinlong;Zhao Hongpeng;Dai Yuehua;Liu Qi;Yang Jin;Jiang Xianwei;Xu Huifang;School of Electronics and Information Engineering, Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences;
Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration Li Yan;Liu Yuling;Niu Xinhuan;Bu Xiaofeng;Li Hongbo;Tang Jiying;Fan Shiyan;Institute of Microelectronics, Hebei University of Technology;Tianfang Limited Company of Detection Technology;
Analysis of the electronic structures of 3d transition metals doped CuGaS_2 based on DFT calculations Zhao Zongyan;Zhou Dacheng;Yi Juan;Faculty of Materials Science and Engineering,Key Laboratory of Advanced Materials of Yunnan Province,Kunming University of Science and Technology;
An InGaAs graded buffer layer in solar cells Qu Xiaosheng;Bao Hongyin;Hanieh.S.Nikjalal;Xiong Liling;Zhen Hongxin;Institute of Electronic Information Engineering, Beihang University;
A programmable MDAC with power scalability Liu Shubin;Zhu Zhangming;Yang Yintang;Liu Lianxi;School of Microelectronics, Xidian University;
A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation Purnima Hazra;S.Jit;Department of Electronics Engineering, Indian Institute of Technology (BHU);
P-type double gate junctionless tunnel field effect transistor M.W.Akram;Bahniman Ghosh;Punyasloka Bal;Partha Mondal;Department of Electrical Engineering,Indian Institute of Technology Kanpur;Microelectronics Research Center;
Effect of active layer deposition temperature on the performance of sputtered amorphous In–Ga–Zn–O thin film transistors Wu Jie;Shi Junfei;Dong Chengyuan;Zou Zhongfei;Chen Yuting;Zhou Daxiang;Hu Zhe;Zhan Runze;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies,Shanghai Jiao Tong University;Infovision Optoelectronics (Kunshan) Co., Ltd;
A novel optimization design for 3.3 kV injection-enhanced gate transistor Tian Xiaoli;Chu Weili;Lu Jiang;Lu Shuojin;Yu Qiaoqun;Zhu Yangjun;Institute of Microelectronics, Chinese Academy of Sciences;Jiangsu R&D Center for Internet of Things;
Design of two-terminal PNPN diode for high-density and high-speed memory applications Tong Xiaodong;Wu Hao;Liang Qingqing;Zhong Huicai;Zhu Huilong;Zhao Chao;Ye Tianchun;Institute of Microelectronics, Chinese Academy of Sciences;
Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress Yang Zhen;Wang Jinyan;Xu Zhe;Li Xiaoping;Zhang Bo;Wang Maojun;Yu Min;Zhang Jincheng;Ma Xiaohua;Li Yongbing;Institute of Microelectronics, Peking University;School of Microelectronics, Xidian University;The 13th Research Institute of CETC;
Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs Wang Chong;Chen Chong;He Yunlong;Zheng Xuefeng;Ma Xiaohua;Zhang Jincheng;Mao Wei;Hao Yue;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics;
A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer Wu Wei;Zhang Bo;Fang Jian;Luo Xiaorong;Li Zhaoji;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;
Research and optimization of the ESD response characteristic in a ps-LDMOS transistor Wang Hao;Liu Siyang;Sun Weifeng;Huang Tingting;National ASIC System Engineering Research Center, Southeast University;
A high gain wide dynamic range transimpedance amplifier for optical receivers Liu Lianxi;Zou Jiao;En Yunfei;Liu Shubin;Niu Yue;Zhu Zhangming;Yang Yintang;School of Microelectronics, Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component;
A new wideband LNA using a g_m-boosting technique Chen Liang;Li Zhiqun;Cao Jia;Wu Chenjian;Zhang Meng;Institute of RF- & OE- ICs, Southeast University;RFIC and System Engineering Research Center of Ministry of Education of China, Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
A low phase noise and low spur PLL frequency synthesizer for GNSS receivers Li Sen;Jiang Jinguang;Zhou Xifeng;Liu Jianghua;School of Physics and Technology, Wuhan University;GNSS Research Center, Wuhan University;Suzhou Institute, Wuhan University;
A millimeter wave linear superposition oscillator in 0.18 m CMOS technology Yan Dong;Mao Luhong;Su Qiujie;Xie Sheng;Zhang Shilin;School of Electronic and Information Engineering, Tianjin University;
A 6–18 GHz broadband power amplifier MMIC with excellent efficiency Chen Yifeng;Quan Jinhai;Liu Yungang;Hu Liulin;Research and Development Department, Ganide Technology Ltd, Co.;
Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips Liu Xiaoxian;Zhu Zhangming;Yang Yintang;Wang Fengjuan;Ding Ruixue;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;
A low-leakage and NBTI-mitigated N-type domino logic Liang Huaguo;Xu Hui;Huang Zhengfeng;Yi Maoxiang;School of Electronic Science and Applied Physics, Heifei University of Technology;School of Computer and Information, Heifei University of Technology;School of Computer Science and Engineering, Anhui University of Science and Technology;
A 130 nm radiation hardened flip–flop with an annular gate and a C-element Wang Lei;Jiang Jianhua;Xiang Yiming;Zhou Yumei;Institute of Microelectronics, Chinese Academy of Sciences;
A 4 GHz CMOS multiplier for sigma–delta modulated signals Guo Xiaodan;Meng Qiao;Liang Yong;Institute of RF- & OE-ICs, Southeast University;Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education;
Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications Zhang Meng;Li Zhiqun;Wang Zengqi;Wu Chenjian;Chen Liang;Institute of RF- & OE-ICs, Southeast University;Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education, Southeast University;Jiangsu Provincial Key Laboratory of Sensor Network Technology;
Optimal migration route of Cu in HfO_2 Lu Jinlong;Luo Jing;Zhao Hongpeng;Yang Jin;Jiang Xianwei;Liu Qi;Li Xiaofeng;Dai Yuehua;Institute of Electronic and Information Engineering, Anhui University;Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences;Internet Network Information Center,Hefei Institutes of Physical Science,Chinese Academy of Sciences;
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