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FQ: 月刊
AD of Publication: 北京市
Lanuage: 英文;
ISSN: 1674-4926
CN: 11-5781/TN
YP: 1980
Url: 中国科学院半导体研究所;中国电子学会
Recommended Journals
2015 -01
An analytic model to describe the relationship between conductance and frequency of heterojunction Liu Changshi;Nan Hu College, Jiaxing University;
First-principles study on electronic structure and conductivity of Sn-doped Ga_(1:375)In_(0:625)O_3 Zhao Yinnü;Yan Jinliang;Xu Chengyang;Dean’s Office, Ludong University;School of Physics and Optoelectronic Engineering, Ludong University;
A novel lateral cavity surface emitting laser with top sub-wavelength grating Qi Aiyi;Wang Yufei;Guo Xiaojie;Zheng Wanhua;State key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences;Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences;
Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis Li Yinying;Wu Xiaoming;Wu Huaqiang;Qian He;Institute of Microelectronics, Tsinghua University;
Effect of defects on the electronic properties of WS_2 armchair nanoribbon Bahniman Ghosh;Aayush Gupta;Microelectronics Research Center, 10100, Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX, 78758, USA;Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India;
Thermionic emission theory and diffusion theory applied to CdTe PV devices Zhang Rumin;Ruan Yu;Li Zhengyi;Cheng Sichong;Liu Dijun;School of Electronic and Information Engineering, Beijing University of Aeronautics & Astronautics;State Key Laboratory of Wireless Mobile Communications, China Academy of Telecommunications Technology (CATT);Leadcore Technology Co, Ltd, Datang Telecom Technology & Industry Group;
Computer modelling and analysis of the photodegradation effect in a-Si:H p–i–n solar cell A.F Bouhdjar;L.Ayat;AM.Meftah;N.Sengouga;AF.Meftah;Faculté des Sciences, Laboratoire des Matériaux Semi-conducteurs et Métalliques, Université Mohammed Khider, B.P. 145,Biskra 07000, Algérie;Laboratory of Semiconductor Devices Physics, Physics Department, University of Béchar, P.O. Box 417, Béchar 08000,Algeria;
A 9–12 GHz 5-bit active LO phase shifter with a new vector sum method Chen Changming;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System, Fudan University;
A 3 Gb/s multichannel transceiver in 65 nm CMOS technology Zhang Feng;Qiu Yusong;Institute of Microelectronics, Chinese Academy of Sciences;College of Physics and Microelectronics Science, Hunan University;
High accuracy digital aging monitor based on PLL-VCO circuit Zhang Yuejun;Jiang Zhidi;Wang Pengjun;Zhang Xuelong;Institute of Circuits and Systems, Ningbo University;
Effect of H_2O_2 and nonionic surfactant in alkaline copper slurry Yuan Haobo;Liu Yuling;Jiang Mengting;Chen Guodong;Liu Weijuan;Wang Shengli;Institute of Microelectronics, Hebei University of Technology;
Next generation barrier CMP slurry with novel weakly alkaline chelating agent Fan Shiyan;Liu Yuling;Sun Ming;Tang Jiying;Yan Chenqi;Li Hailong;Wang Shengli;Institute of Microelectronics, Hebei University of Technology;School of Computer Science and Engineering, Hebei University of Technology;
The calculation of band gap energy in zinc oxide films Ali Arif;Okba Belahssen;Salim Gareh;Said Benramache;Electrical Engineering Department, Faculty of Technology, University of Biskra, Algeria;Laboratoire de Physique des Couches Minces et Applications (LPCMA), Université de Biskra, Algeria;Mechanical Engineering Department, Faculty of Technology, University of Biskra, Algeria;
Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique Yacine Aoun;Boubaker Benhaoua;Brahim Gasmi;Said Benramache;Mechanical Department, Faculty of Technology, University of Biskra, Biskra 07000, Algeria;VTRS Laboratory, Institute of Technology, University of El-Oued, El-Oued 39000, Algeria;Laboratoire de Physique des Couches Minces et Application, University of Biskra, Biskra 07000, Algeria;Material Sciences Department, Faculty of Science, University of Biskra, Biskra 07000, Algeria;
Preparation and thermal-sensitive characteristic of copper doped n-type silicon material Fan Yanwei;Zhou Bukang;Wang Junhua;Chen Zhaoyang;Chang Aimin;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics & Chemistry of CAS;University of Chinese Academy of Sciences;
Influence of N-type doping on the oxidation rate in n-type 6H-SiC Guo Hui;Zhao Yaqiu;Zhang Yuming;Ling Xianbao;Microelectronics School,Xidian University;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xidian University;
Numerical simulation of the effect of gold doping on the resistance to neutron irradiation of silicon diodes K.Bekhouche;N.Sengouga;B.K.Jones;Laboratory of Metallic and Semiconducting Materials (LMSM), Université de Biskra, 07000 Biskra, Algeria;Department of Physics, Lancaster University, Lancaster, LA5 9LX, UK;
Performance analysis of InSb based QWFET for ultra high speed applications T.D.Subash;T.Gnanasekaran;C.Divya;K.N.S.K College of Engineering, Nagercoil-629901, India;Department of IT, RMK College of Engineering and Technology, 629401, India;Centre for IT & Eng, Manonmaniam Sundaranar University, 627012, India;
An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects M.Hema Lata Rao;N.V.L.Narasimha Murty;School of Electrical Sciences,IIT Bhubaneswar,Bhubaneswar 751013,India;
Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs Menka,Anand Bulusu;S.Dasgupta;Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee (IITR), Roorkee,Uttarakhand, India;
Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation Li Leilei;Zhou Xinjie;Yu Zongguang;Feng Qing;School of Microelectronics, Xidian University;The 58th Research Institute of China Electronics Technology Group Corporation;
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process Ren Shangqing;Yang Hong;Tang Bo;Xu Hao;Luo Weichun;Tang Zhaoyun;Xu Yefeng;Xu Jing;Wang Dahai;Li Junfeng;Yan Jiang;Zhao Chao;Chen Dapeng;Ye Tianchun;Wang Wenwu;Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences;
GaN HEMT with AlGaN back barrier for high power MMIC switch application Ren Chunjiang;Shen Hongchang;Li Zhonghui;Chen Tangsheng;Zhang Bin;Gao Tao;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electron Devices Institute;
An improved trench gate super-junction IGBT with double emitter Dai Weinan;Zhu Jing;Sun Weifeng;Du Yicheng;Huang Keqin;National ASIC System Engineering Research Center, Southeast University;
Performance enhancement of c-CESL-strained 95-nm-gate NMOSFET using trench-based structure Zhao Di;Luo Qian;Wang Xiangzhan;Yu Qi;Cui Wei;Tan Kaizhou;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China;Science and Technology on Analog Integrated Circuit Laboratory;
Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer Zhu Zhen;Zhang Xin;Li Peixu;Wang Gang;Xu Xiangang;School of Physics and Engineering,Sun Yat-Sen University;Shandong Huaguang Optoelectronics Co.,Ltd;State Key Laboratory of Crystal Material,Shandong University;
All-optical NRZ wavelength conversion using a Sagnac loop with optimized SOA characteristics Jiang Xiyan;Wang Jin;Gao Chen;Xu Ji;Wan Hongdan;College of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications;
A 0.8–4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications Zhao Yuanxin;Gao Yuanpei;Li Wei;Li Ning;Ren Junyan;State Key Laboratory of ASIC & System, Fudan University;
A novel SOI pressure sensor for high temperature application Li Sainan;Liang Ting;Wang Wei;Hong Yingping;Zheng Tingli;Xiong Jijun;Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China),Ministry of Education;Ministry of Education and Science Technology on Electronic Test & Measurement Laboratory. Department of Electronic Science and technology, North University of China;
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