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Electronics & Packaging
FQ: 月刊
AD of Publication: 江苏省无锡市
Lanuage: 中文;
ISSN: 1681-1070
CN: 32-1709/TN
YP: 2002
Url: 中国电子科技集团公司第五十八研究所
Recommended Journals
Electronics & Packaging
2018 -06
Catalog
Constraints and Resolution Strategy of Implementation of MES in Military Electronic Industry YU Yongzhou;SUN Guangqiao;HUANG Nianning;LIN Gang;QI Yufa;Nanjing Electronic Devices Institute;
Design of DRFM Based on Localized Devices WANG Mingjun;China Electronics Technology Group Corporation No.51 Research Institute;
Overview of the Development of PTFE Copper Clad Laminate LI Miao;ZOU Jiajia;LIU Jianjun;CHENG Mingsheng;China Electronics Technology Group Corporation No.38 Research Institute;
A Novel Thermal Protection Circuit Based on 0.25 μm CMOS Process GE Xingjie;LU Feng;College of Internet of Things
Technology Readiness Assessment Used in Development of Electronic Materials for Import Substitution ZHAO Dan;ZOU Jiajia;GUAN Meizhang;FAN Xiaochun;China Electronics Technology Group Corporation No.38 Research Institute;
Simulation Study on the Influence Factors of Diode Photocurrent LIU Chengfang;SUN Peng;GAO Wuhao;XIA Yun;ZUO Huiling;CHEN Wanjun;State Key Laboratory of Electronic Thin Film and Integrated Devices
C-Band 400 W GaN Internally Matched Power Transistor XU Yonggang;GU Liming;TANG Mingkai;TANG Shijun;CHEN Xiaoqing;LIU Zhu;CHEN Tao;Nanjing Electronic Devices Institute;
Optimization for the Center Frequency Deviation of LTCC Band-Pass Filter WANG Liang;CHEN Xiaoyong;QIAN Chao;JIA Shaoxiong;LI Jun;China Electronics Technology Group Corporation No.2 Research Institute;
Measure and Control Application on Agilent E4982A RSRF Meter DENG Changkai;TANG Mingching;HU Yiping;Infineon Technologies
ADSP Testing Based on ATE WU Qianwen;XI Liuhua;ZHANG Kaihong;China Electronics Technology Group Corporation No.58 Research Institute;
A 12 Bit 1 GS/s RF Sampling Pipelined ADC SHI Shuaishuai;TANG He;WU Jin;WANG Zhuo;ZHANG Bo;University of Electronic Science and Technology of China;Institute of Microelectronics of Chinese Academy of Sciences;
The Improvement of Gate-Induced-Drain-leakage(GIDL) Current in Short-channel MOSFET GU Xiang;CHENG Tian;HONG Genshen;ZHAO Wenbin;China Electronics Technology Group Corporation No.58 Research Institute;CR Microelectronics;
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