Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
Full-Text Search:
Microelectronics
FQ: 双月
AD of Publication: 重庆市
Lanuage: 中文;
ISSN: 1004-3365
CN: 50-1090/TN
YP: 1971
Url: 四川固体电路研究所
Recommended Journals
Microelectronics
1988 -06
Catalog
An Experimental Study of Neutron Irradiated Bipolar Transistors Li Jiguo (Hebei Semiconductor Research Institute)
Effects of Neutron Irradiation on Bipolar Transistors Tao Youcui and Qiao Shuyun (Hebei Semiconductor Research Institute)
A Pre-estimation of Neutron Damage Constant for Double-Diffused Transistors Liang Weixiu (Shanghai Semiconductor Device Research Institute)
A Study of Neutron Radiation Effect for Si High Voltage Rectifying Diodes Zhou Hexiou, Lu Jinyin, Wu Youcheng and Li Rui (Hehei Semiconductor Research Institute)
Ionizing Radiation Characteristics of MOSFETs at Low Temperature(77°K) Wu Qinzhi, Liu Changshi and Zhang Lingshan (Xingjiang Institute of physics, Academia Sinica) Wang Fang, Li yinbo and Zhao yuanfu (Lishan Microelectronics Corp.)
Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET Wang Fang, Sun Longjie and Huang Chang (Lishan Microelectronics Corp.) Wu Qinzhi and Zhang Lingshan (Xinjiang Physics Institute)
Effects of Ionizing Radiation on MSI CMOS Integrated Circuits Ren Diyuan, Mellathan, Zhang Lingshan,Lu Wu and Yan Rongliang (Xinjiang Institute of Physics,Academia Sinica)
An Estimation of Transient Photocurrent of Epitaxial Transistors Song Qinqi (Lishan Microelectronics Corp.)
An Evaluation of the Lower Limit Range of the Damage Threshold of a Transistor Zhou Shaowen (Shanghai Semiconductor Device Research Institute)
A Pretective Device of Spark Gap Xu Binyu (Beijing Institute of Vacuum Electronic Devices)
Test Procedures for Surge Protective Devices Xu Binyu and Zhang Lihua (Beijing Institute of Vacuum Electronic Devices)
An Approach to Radiation Hardening of Bipolar Analog ICs Su Wanshi (Sichuan Institute of Solid-state Circuits)
A Novel Design and Study of a Radiation-Hardened Integrated Voltage Regulator Cao Guangming (Sichuan Institute of Solid-State Circuits)
Study on SEBISIT—A Novel Radiation Hardened High Voltage Power Transistor Cai Shujun, Wang Changhe and Huang Zhongsheng (Hebei Semiconductor Research Institute)
High Performance Radiation Hardened CMOS/SOS Integrated Circuits Liu Zhongli, He Zhiling and Mao Dongsheng (Institute of Semiconductors, Academia Sinica)
Process and Designing of Radiation Hardened Al-gate Bulk Si CMOS iCs Yang qinying, Ni Xiuzhen and Ling Xiaoxue (Beijing No.3 Semiconductor Device Factory)
A Study on Radiation-Hardened High-Speed Electronic Switch Zeng Ping (Sichuan Institute of Solid-State Circuits)
Methods for Radiation Hardening of Bipolar ICs of RHX 36 Series Zhong Bingfu (Sichuan Institute of Solid-State Circuits)
Computer Simulation of the Transient Radiation Effect on Bipolar ICs Chen Jianci, Song Qinqi and Zhang Zhengde (Lishan Microelectronics Corp.)
Computer Simulation of Transient Radiation Effects on CMOS Circuits Huang Shengming, Song Qinqi, Zhang Zhengde and Huang Chang (Lishan Microelectronics Corp.)
Simulation of Transient Irradiation Effect by a Pulsed Laser Wang Minggang and Song Qinqi (Liskan Microelectronics Corp.)
10 KeV X-Ray Radiatipion Effect of MOS Devices Zhang Chengfang and Liu Xueru (Sichuan Institute of Solid-state Circuits)
Long-term Reliability tests for CMOS/SOS Devices He Lin, Guan Shaolong and Shi Hong (Sichuan Institute of Solid-state Circuits)
The Design of an Input Protection Network for CMOS/SOS ICs Liu Zhongli, Liu Ronghuan, He Zhiling, Yu Fang and Song Jun (Institute of Semiconductors, Academia Sinica)
1988 Issues:  [01] [02] [03] [04] [05] [06]
More Issues:   [1989]   [1990]   [1991]   [1992]   [1993]   [1994]   [1995]   [1996]   [1997]   [1998]   [1999]   [2000]   [2001]   [2002]   [2003]   [2004]   [2005]   [2006]   [2007]   [2008]   [2009]   [2010]   [2011]   [2012]   [2013]   [2014]   [2015]   [2016]   [2017]
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved