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FQ: 双月
AD of Publication: 重庆市
Lanuage: 中文;
ISSN: 1004-3365
CN: 50-1090/TN
YP: 1971
Url: 四川固体电路研究所
Recommended Journals
1993 -01
A 1500MHz ECL Fixed Prescaler Yuan Bolu Sichuan Institute of Solid-state Cirouits, 630060. Chungqing, Sichuan
The Fabrication of a High Performance Vertical p-n-p Transistors Wang Jieping, Wang Qingping and Long Diguang Sichuan Institute of Solid-State Circuits, 630060, Chongqing, Sichuan
Interface Control During Silicon Direct Bonding Zhang Zhengfan Sichuan Institute of Solid-State Circuits.630060, CHongqing,Sichuan
Ion Implantation for High Speed Bipolar Devices Fan Caiyou Sichuan Institute of Solid-State Circuits, 630060 ,Chongqing,Sichuan
A Dry Etch Technology for SiO2 Sidewall in LDD and SST Device Structures Shao Jianxin, Ma Hong and Guo Hongwei Huajing Electronics Group Corp. 214035, Wuxi, Jiangsu
Advances in Fine Doping Techniques and Their Applications Song Dengyuan Dept. Blectronics, Hebei University, 071002, Banding, Hebei
Latest Advances in Turn-Off Thyristors Lu Yuzeng and Fang Jian Microelectronics Institute, University of Electronic Sri. &Technol. of China, 610054, Chengdu, Sichuan
A Study on High-Voltage Metal Field-Limited-Rings Zhang Shuo and Wu Zhengyuan Deft, Solid-State Electronics ,Huazhong University of Sci. & Technol. 430074.Wuhan,. Hubei
An Algorithm for Timing Driven Initial Placement of the Building Block Layout and Its Implementation Jin Ling China Electronic Product Reliability and Environmental Testing Research Institute,510610,Guangzhou,Guangdong
Decomposition of Multilevel Logic Functions Based on the Standard Cell Library Zeng Xianjun,Ye Yizheng and He Yu IC CAD Lab,Harbin University of Technology, 150000,Harbin,Heilongjiang
l/fv Noise Characterization of Electromigration in VLSI Metal Thin Film Interconnections Zhuang Yiqi and Sun Qing Microelectronics Institute, Xidian University, 710071.Xi' an.Shoanxi
1993 Issues:  [01] [02] [03] [04] [05] [06]
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