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Microelectronics
FQ: 双月
AD of Publication: 重庆市
Lanuage: 中文;
ISSN: 1004-3365
CN: 50-1090/TN
YP: 1971
Url: 四川固体电路研究所
Recommended Journals
Microelectronics
2009 -04
Catalog
Large-Current and High-Precision Integrated Automotive Voltage Regulator YANG Fashun1,2,LIN Jiexin1,2,MA Kui1,DING Zhao1,2,FU Xinghua1,2(1.Dept.of Electronics Science,Guizhou University,Guiyang 550025,P.R.China;2.Key Laboratory of Micro-Nano Technology of Guizhou Province,Guiyang 550025,P.R.China)
High Voltage PDP Data Driver IC Based on Thin Layer SOI WANG Zhuo,LIU Xinxin,QIAO Ming,ZHANG Bo,LI Zhaoji(State Key Lab of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)
Fast Simulation of High-Speed and High-Resolution Pipelined ADC WEI Baoyue,ZHOU Yumei(ASIC & System Dept.,Institute of Microelectronics,the Chinese Academy of Sciences,Beijing 100029,P.R.China)
A High-Resolution Self-Calibrated Single Slope Integration ADC LIU Haorui1,WANG Baiming2,LI Kunhua2,XIA Lisheng1,XUE Chaojie1(1.Institute of Optoelectronics,Shenzhen University,Shenzhen,Guangdong 518060,P.R.China;2.EDA Technology Center,College of Information Engineering,Shenzhen University,Shenzhen,Guangdong 518060,P.R.China)
Thermal Design of Integrated Power Electronics Module Using Flip-Chip Technology WANG Jiangang1,2,RUAN Xinbo2(1.College of Electrical Engineering,Yancheng Institute of Technology,Yancheng,Jiangsu 224003,P.R.China;2.College of Automation Engineering,Nanjing University of Aeronautics & Astronautics,Nanjing 210016,P.R.China)
Digital Sine-Wave Generator for Testing High Resolution DAC PANG Jianguo1,LIU Liyuan1,LI Dongmei2(1.Inst.of Microelec.Tsinghua Univ.,Beijing 100084,P.R.China;2.Dept.of Electro.Engineer.,Tsinghua Univ.,Beijing 100084,P.R.China)
Design of a Low-Pass/Polyphase Dual-Mode Filter GAN Yebing1,PAN Wenguang1,MA Chengyan2,YUAN Guoshun1(1.Institute of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,P.R.China;2.Hangzhou Zhongke Microelectronics Co.,Ltd,Hangzhou 310053,P.R.China)
A Bandgap Voltage Reference with High Power Supply Rejection Ratio WU Zonggui1,2,DENG Aizhi1,QIN Shuijie2,YANG Fashun1 (1.College of Science,Guizhou University,Guiyang 550025,P.R.China; 2.Guizhou Provincial Key Laboratory for Photoelectric Technology and Application,Guiyang 550025,P.R.China)
High Performance CMOS Bandgap Voltage Reference Source with Multiple V/I Output ZHANG Zhengxu,LI Shaoqing,MA Zhuo,XIAO Haipeng(School of Computer Science,National University of Defense Technology,Changsha,Hunan 410073,P.R.China)
Implementation of Displayport Protocol on FPGA ZHENG Bin1,LIU Jianhong2,GONG Xuyang1,HUANG Junhuai3 (1.Southwest Institute of Electronic Equipment,Chengdu 610036,P.R.China;2.Yang Zi Eastman Ltd.,Nanjing 210061,P.R.China;3.Nanjing Tubo Technology Ltd.,Nanjing 210019,P.R.China)
A Wideband Low Noise Amplifier Using Noise-Canceling Technique CAI Shuting1,2,WANG Keping2,WANG Zhigong2,JIN Sheng3,WU Kaiwen3(1.Faculty of Automation,Guangdong Univ.of Technol.,Guangzhou 510006,P.R.China;2.School of Inform.Sci.and Engineer.,Southeast Univ.,Nanjing,Jiangsu 210096,P.R.China;3.School of Inform.Sci.and Engineer.,Ningbo Univ.,Ningbo,Zhejiang 315211,P.R.China)
A 16-Bit Δ-Σ Modulator for Audio Application HAN Dandan,YANG Huazhong(Dept.of Electronic Engineering,Tsinghua National Lab of Infor.Sci.and Technol.,Tsinghua University,Beijing 100084,P.R.China)
Design of a High-Speed and High-Resolution Σ-Δ Modulator TAN Ziyou,MENG Fanbin,TANG Shengxue,XIANG Xiaoyan(College of Physics Science and Information Engineering,Jishou University,Jishou,Hunan 416000,P.R.China)
Design and Simulation of a 3~(rd)-Order 1-1-1 Cascaded Σ-Δ Modulator PU Shoujie1,GU Xiaofeng1,LI Yangxian1,XU Bo1,YU Zongguang1,2(1.School of Inform.Technol.,Jiangnan Univ.,Wuxi,Jiangsu 214122,P.R.China;2.No.58 Institute,CETC,Wuxi,Jiangsu 214035,P.R.China)
Design of 4.2 GHz CMOS RF Front-end QIU Cong,YE Qing,YE Tianchun,FAN Jun(Institute of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,P.R.China)
An Innovative Analytical Model for LDMOS with Self-Heating Effects GAO Wen,YANG Dongxu,YU Zhiping(Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China)
A Performance-Driven Global Router Considering Crosstalk Optimization HUANG Shijie,SHI Guoyong(School of Microelectronics,Shanghai Jiaotong University,Shanghai 200240,P.R.China)
X-Ray Dose Enhancement Effects on 80C196 Microcomputer System CHU Zhongqiang,XU Xi,MU Weibing,ZHAN Junling,ZHAO Gang(Institute of Electronic Engineering,Chinese Academy of Engineering and Physics,Mianyang,Sichuan 621900,P.R.China)
Effects of Moisture on the Reliability of QFN Device in Hygro-Thermal Environment NONG Hongmi,JIANG Tingbiao(Guilin University of Electronic Technology,Guilin,Guangxi 541004,P.R.China)
Effects of Surface Passivation on Reliability of Ge MOS Capacitors ZOU Xiao1,XU Jingping2(1.Dept.of Electromachine Engineering,Jianghan University,Wuhan 430056,P.R.China;2.Dept.of Electronic Science & Technology,Huazhong University of Science and Technology,Wuhan 430074,P.R.China)
Study on TiW Alloy as Barrier Layer Against Cu/Cu~(2+) Diffusion TANG Zhaohuan1,LIANG Tao1,LIU Yong1,2,TAN Kaizhou1,2,WANG Fei1(1.Sichuan Institute of Solid State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,P.R.China;2.National Laboratory of Analog Integrated Circuits,Chongqing 400060,P.R.China)
Study on PJFET-Bipolar Compatible Process Technology SHUI Guohua1,TANG Zhaohuan1,LIU Yong1,2,OU Hongqi1,2,YANG Yonghui1,2,WANG Xueyi1,HUANG Lei1(1.Sichuan Institute of Solid State Circuits,CETC,Chongqing 400060;2.National Laboratory of Analog ICs,Chongqing 400060,P.R.China)
Study on Electrical Characteristics of Ge-pMOSFET with Ultrathin High-k Gate Dielectrics CHEN Juanjuan1,XU Jingping1,CHEN Weibing2(1.Dept.of Elec.Sci.& Tech.,Huazhong Univ.of Sci.& Tech.,Wuhan 430074,P.R.China;2.School of Computer and Communication,Hunan University of Technology,Zhuzhou,Hunan 412008,P.R.China)
Study of Quasi-Saturation Effect in High Breakdown Voltage CoolMOS and Its Optimization Design ZHU Jing,QIAN Qinsong,SUN Weifeng,LI Haisong(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,P.R.China)
Study on Semi-Superjunction VDMOS CHEN Wengao,JING Jili,SUN Weifeng(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,P.R.China)
Field Aided Lateral Crystallization of Amorphous Silicon Induced by Ni and Its Eletromigration Effect WANG Guangwei,ZHANG Jianmin,ZHANG Ping,XU Shuyun(Dept.of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,P.R.China)
Line Voltage Feed-forward Compensation for Quasi-Resonant PWM Controllers DUAN Liye1,2,ZHOU Yumei2,ZHAO Ye2,ZENG Yun1(1.School of Physics and Microelectronics Science,Hunan University,Changsha 410082,P.R.China;2.Institute of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,P.R.China)
Low Power Error-Resilient Motion Estimation VLSI Architecture Based on Global Elimination Algorithm WANG Hongyuan,CHEN Muyi,FENG Yongxin(Dept.of Information Science and Engineering,Shenyang Ligong University,Shenyang,Liaoning 110168,P.R.China)
Application of UART in SIM Card Access LUO Jing(College of Applied Technologies,Chongqing Jiaotong University,Chongqing 400074,P.R.China)
Design of Digital Baseband for Zigbee Transceiver ZHANG Fen1,LI Guolin2,LIU Leibo1,YIN Shouyi1,ZHANG Chun1(1.Inst.of Microelec.,Tsinghua Univ.,Beijing 100084,P.R.China;2.Dept.of Elec.Engineer.,Tsinghua Univ.,Beijing 100084,P.R.China)
Design of a 1.2 GHz PLL Based on 0.35 μm CMOS Technology YANG Li1,JIANG Chunmin1,JING Youfeng2(1.Sichuan Electric Vocational and Technical College,Chengdu 610072,P.R.China;2.Chengdu Electromechanical College,Chengdu 610031,P.R.China)
2.645 GHz Quadrature LO Generator Circuit GAO Haijun,YIN Yadong,GUO Guiliang,DU Zhankun,YAN Yuepeng(Dept.of Electronics System Technology,Institute of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,P.R.China)
Progress in Development of Resistive RAM and Its Integration Technology ZUO Qingyun,LIU Ming,LONG Shibing,WANG Qin,HU Yuan,LIU Qi,ZHANG Sen,WANG Yan,LI Yingtao(Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,The Chinese Academy of Sciences,Beijing 100029,P.R.China)
Limitations to Development of Si Microelectronics Industry and Countermeasures LIU Zhongli(Institute of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,P.R.China)
2009 Issues:  [01] [02] [03] [04] [05] [06]
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