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Design and implementation of pulse high-voltage source for testing semiconductor power devices

GAO Zixing;ZHAO Zhao;LI Jie;SHA Changtao;GAO Feng;China Electronics Standardization Institute;Shandong University of science and technology;  
In order to meet the requirement of output pulse amplitude and width of high-voltage pulse source in power semiconductor device parameter measurement, a pulse high-voltage source with continuously adjustable pulse amplitude and width is designed based on the principle of Marx generator, which can be used for fast measurement of power semiconductor device parameters. The pulse high-voltage source reduces the charging time of the pulse generator by improving the basic structure of the Marx generator and using the dual power charging mode. The synchronous discharge circuit is adopted to improve the output precision of the pulse voltage. On this basis, fast recovery diode is used to isolate each stage of the Marx circuit to reduce the charging loss. By controlling the charging voltage of the dual power supply and the conduction time of the solid-state switch in the discharge circuit, the amplitude and width of the output pulse voltage can be continuously adjusted. The experimental results show that the pulse high-voltage source can be continuously adjusted between the pulse amplitude of 0~8000 V and the pulse width of 200~1000 μs, and the rise time is 35 ns, which can meet the needs of fast measurement of power semiconductor device parameters.
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